Search Results (100)

Organic photodetectors (OPDs) offer considerable promise for low-power, solution-processable biosensing and imaging applications; however, their performance remains limited by spectral mismatch and interfacial trap states. In this study, a highly sensitive polymer photodiode was developed via trace incorporation (0.8 wt%) of InP/ZnSe/ZnS quantum dots (QDs) into a PTB7-Th:PC₇₁BM bulk heterojunction (BHJ) matrix. This QD doping approach enhanced the external quantum efficiency (EQE) across the 540–660 nm range and suppressed the dark current density at −2 V by passivating interface trap states. Despite a slight decrease in optical absorption at the optimized composition, the internal quantum efficiency (IQE) increased significantly from ~80% to nearly 95% resulting in a net EQE improvement. This suggests that QD incorporation improved charge transport without compromising charge separation efficiency. As a result, the device achieved a specific detectivity (D*) of 1.8 × 10¹³ Jones, representing a 93% improvement over binary BHJs, along with an ultra-low dark current density of 7.76 × 10⁻¹⁰ A/cm². Excessive QD loading, however, led to optical losses and increased dark current, underscoring the need for precise compositional control. Furthermore, the enhanced detectivity led to a 4 dB improvement in the signal-to-noise ratio (SNR) of photoplethysmography (PPG) signals in the target wavelength range, enabling more reliable biophotonic sensing without increased power consumption. This work demonstrates that QD-based spectral and interfacial engineering offers an effective and scalable route for advancing the performance of OPDs, with broad applicability to low-power biosensors and high-resolution polymer–QD imaging systems. Full article

Organic phototransistors exhibit considerably higher photoresponsivity than diode-like photodetectors owing to gate-field-effect amplification. However, the conventional definition of photoresponsivity (R) fails to accurately capture the photoresponsivity trends of transistor-based photodetectors. This study systematically investigates the impact of device geometry—specifically the width-to-length (W/L) ratio and photosensitive area—on the responsivity and photocurrent of organic phototransistors. The experimental results reveal that increasing the W/L ratio or decreasing the device area substantially enhances responsivity. A detailed analysis based on the definition of responsivity is presented herein. Finally, we introduce a channel-width-normalized responsivity to compensate for geometric effects, enabling a more accurate evaluation of device performance across different device structures. Overall, our results indicate the potential for optimizing organic phototransistors by tuning their geometric parameters. Full article

Two-dimensional (2D) hybrid organic–inorganic perovskites (HOIPs) have attracted considerable attention in optoelectronic applications, owing to their remarkable characteristics. Nevertheless, the application of 2D HOIPs encounters inherent challenges due to the presence of insulating organic spacers, which create barriers for efficient interlayer charge transport (CT). To tackle this issue, we propose a BA₂MAPb₂I₇/PEA₂MA₂Pb₃I₁₀ bilayer heterostructure, where efficient interlayer energy transfer (ET) facilitates compensation for the restricted charge transport across the organic spacer. Our findings reveal that under 532 nm light illumination, the BA₂MAPb₂I₇/PEA₂MA₂Pb₃I₁₀ heterostructure photodetector exhibits a significant photocurrent enhancement compared with that of the pure PEA₂MA₂Pb₃I₁₀ device, mainly due to the contribution of the ET process. In contrast, under 600 nm light illumination, where ET is absent, the enhancement is rather limited, emphasizing the critical role of ET in boosting device performance. The overlap of the PL emission peak of BA₂MAPb₂I₇ with the absorption spectra of PEA₂MA₂Pb₃I₁₀, alongside the PL quenching of BA₂MAPb₂I₇ and the enhanced emission of PEA₂MA₂Pb₃I₁₀ provide confirmation of the existence of ET in the BA₂MAPb₂I₇/PEA₂MA₂Pb₃I₁₀ heterostructure. Furthermore, the PL enhancement factor followed a 1/d² relationship with the thickness of the hBN layer, indicating that ET originates from 2D-to-2D dipole–dipole coupling. This study not only highlights the potential of leveraging ET mechanisms to overcome the limitations of interlayer CT, but also contributes to the fundamental understanding required for engineering advanced 2D HOIP optoelectronic systems. Full article

Titanium dioxide (TiO₂) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO₂ is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO₂ exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO₂ nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO₂/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO₂ nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO₂-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology. Full article

Recent advancements in ultraviolet (UV) photodetection technology have driven intensive research on zinc oxide (ZnO) nanomaterials due to their exceptional optoelectronic properties. This review systematically examines the fundamental detection mechanisms in ZnO-based UV photodetectors (UVPDs), including photoconductivity effects, the threshold dimension phenomenon and light-modulated interface barriers. Based on these mechanisms, a large surface barrier due to surface-adsorbed O₂ is generally constructed to achieve a high sensitivity. However, this improvement is obtained with a decrease in response speed due to the slow desorption and re-adsorption processes of surface O₂ during UV light detection. Various improvement strategies have been proposed to overcome this drawback and keep the high sensitivity, including ZnO–organic semiconductor interfacing, defect engineering and doping, surface modification, heterojunction and the Schottky barrier. The general idea is to modify the adsorption state of O₂ or replace the adsorbed O₂ with another material to build a light-regulated surface or an interface barrier, as surveyed in the third section. The critical trade-off between sensitivity and response speed is also addressed. Finally, after a summary of these mechanisms and the improvement methods, this review is concluded with an outlook on the future development of ZnO nanomaterial UVPDs. Full article

Optical techniques to study neuronal activity have greatly advanced the field of neuroscience over recent decades. Multichannel silicon-based recording probes combined with optical fibers allow for simultaneous recording and manipulation of neuronal activity that underpins cognitive processes and behavior. The recent development of neural probes incorporating organic light-emitting diodes (OLEDs) and photodiode-based organic photodetectors (OPDs) offer additional advantages of biocompatibility, ultra-small footprint, multifunctionality, and low cost. These developments are ushering in a new generation of devices that are ideal for the interrogation of neuronal activity in vitro and in vivo. In this review, we discuss recent progress in OLED- and OPD-based neural probes, their applications in the optical control of neuronal function, and current challenges and prospects for the future. Full article

With the rapid development of high-speed imaging, aerospace, and telecommunications, high-performance photodetectors across a broadband spectrum are urgently demanded. Due to abundant surface configurations and exceptional electronic properties, two-dimensional (2D) materials are considered as ideal candidates for broadband photodetection applications. However, broadband photodetectors with both high responsivity and fast response time remain a challenging issue for all the researchers. This review paper is organized as follows. Introduction introduces the fundamental properties and broadband photodetection performances of transition metal dichalcogenides (TMDCs), perovskites, topological insulators, graphene, and black phosphorus (BP). This section provides an in-depth analysis of their unique optoelectronic properties and probes the intrinsic physical mechanism of broadband detection. In Two-Dimensional Material-Based Broadband Photodetectors, some innovative strategies are given to expand the detection wavelength range of 2D material-based photodetectors and enhance their overall performances. Among them, chemical doping, defect engineering, constructing heterostructures, and strain engineering methods are found to be more effective for improving their photodetection performances. The last section addresses the challenges and future prospects of 2D material-based broadband photodetectors. Furthermore, to meet the practical requirements for very large-scale integration (VLSI) applications, their work reliability, production cost and compatibility with planar technology should be paid much attention. Full article

Hybrid organohalide perovskites have received considerable attention due to their exceptional photovoltaic (PV) conversion efficiencies in optoelectronic devices. In this study, we report the development of a highly sensitive, self-powered perovskite-based photovoltaic photodiode (PVPD) fabricated by incorporating a poly(amic acid)-polyimide (PAA-PI) copolymer as an interfacial layer between a methylammonium lead iodide (CH₃NH₃PbI₃, MAPbI₃) perovskite light-absorbing layer and a poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT: PSS) hole injection layer. The PAA-PI interfacial layer effectively suppresses carrier recombination at the interfaces, resulting in a high power conversion efficiency (PCE) of 11.8% compared to 10.4% in reference devices without an interfacial layer. Moreover, applying the PAA-PI interfacial layer to the MAPbI₃ PVPD significantly improves the photodiode performance, increasing the specific detectivity by 49 times to 7.82 × 10¹⁰ Jones compared to the corresponding results of reference devices without an interfacial layer. The PAA-PI-passivated MAPbI₃ PVPD also exhibits a wide linear dynamic range of ~103 dB and fast response times, with rise and decay times of 61 and 18 µs, respectively. The improved dynamic response of the PAA-PI-passivated MAPbI₃ PVPD enables effective weak-light detection, highlighting the potential of advanced interfacial engineering with PAA-PI interfacial layers in the development of high-performance, self-powered perovskite photovoltaic photodetectors for a wide range of optoelectronic applications. Full article

In this study, it is shown that an efficient organic optocoupler (OPC) can be fabricated using commercially available and solution-processable organic semiconductors. The transmitter is a single-active-layer organic light-emitting diode (OLED) made from a well-known polyparavinylene derivative, Super Yellow. The receiver is an organic light-emitting diode (OLSD) with a single active layer consisting of a mixture of the polymer donor PTB7-Th and the low-molecular-weight acceptor ITIC; the receiver operates without an applied reverse voltage. OLED and OLSD have the same geometry and simple structure without any interlayers: glass/ITO/PEDOT:PSS/(active layer)/Ca/Al; the OPC is formed by OLED and OLSD which adhere tightly to each other. Despite its simple structure, the OPC showed a current transfer ratio of 0.13%, good linearity, and good dynamic performance: a three-decibel cutoff frequency of 170 kHz and response times to a step change in current at the OPC input of 2 μs. Compared to most organic OPC devices with similar performance parameters, where the transmitter and receiver have complex structures with additional interlayers between the active layers and electrodes and the need to apply a reverse voltage to the receiver, the simple design of our OPC reduces the number of fabrication steps and greatly simplifies the device fabrication process. Full article

A photoplethysmography (PPG) sensor is a cost-effective and efficacious way of measuring health conditions such as heart rate, oxygen saturation, and respiration rate. In this work, we present a hybrid PPG sensor system working in a reflective mode with an optoelectronic module, i.e., the combination of an inorganic light-emitting diode (LED) and a circular-shaped organic photodetector (OPD) surrounding the LED for efficient light harvest followed by the proper driving circuit for accurate PPG signal acquisition. The performance of the hybrid sensor system was confirmed by the heart rate detection process from the PPG using fast Fourier transform analysis. The PPG signal obtained with a 50% LED duty cycle and 250 Hz sampling rate resulted in accurate heart rate monitoring with an acceptable range of error. The effects of the LED duty cycle and the LED luminous intensity were found to be crucial to the heart rate accuracy and to the power consumption, i.e., indispensable factors for the hybrid sensor. Full article

Photodetectors based on selenium (Se) have attracted significant attention because of their outstanding optoelectronic characteristics, including their rapid reactivity and high photoconductivity. However, the poor responsivity of pure Se limits their further development. In this study, a novel Se-P/P3HT:G photodetector was designed and fabricated by combining an organic semiconductor made of poly-3-hexylthiophene mixed with graphene (P3HT:G) with self-supporting Se paper (Se-P) via spin-coating process. The device possesses a dark current of around 4.23 × 10⁻¹² A and self-powered characteristics at 300–900 nm. At zero bias voltage and 548 nm illumination, the Se-P/P3HT:G photodetector demonstrates a maximum photocurrent of 1.35 × 10⁻⁹ A (745% higher than that of Se-P at 0.1 V), a quick response time (16.2/27.6 ms), an on/off ratio of 292, and a maximum detectivity and responsivity of 6.47 × 10¹¹ Jones and 34 mA W⁻¹, respectively. Moreover, Se-P/P3HT:G exhibits superior environmental stability. After one month, the photocurrent value of the Se-P/P3HT:G device held steady at 91.4% of its initial value, and even following pre-treatment at 140 °C, the on/off ratio still remained 17 (at a retention rate of about 5.9%). The excellent thermal stability, environmental reliability, and optoelectronic performance of this heterojunction structure offer a useful pathway for the future advancement of high-performance optoelectronic devices. Full article

This review provides a comprehensive overview of recent advancements in the synthesis, properties, and applications of organic materials in the optoelectronics sector. The study emphasizes the critical role of organic materials in the development of state-of-the-art optoelectronic devices such as organic solar cells, organic thin-film transistors, and OLEDs. The review further examines the structure, operational principles, and performance metrics of organic optoelectronic devices. Organic materials have emerged as promising candidates due to their low-cost production and potential for large-area or flexible substrate applications. Additionally, this review highlights the physical mechanisms governing the optoelectronic properties of high-performance organic materials, particularly photoinduced processes relevant to charge carrier photogeneration. It discusses the unique benefits of organic materials over traditional inorganic materials, including their light weight, simple processing, and flexibility. The report delves into the challenges related to stability, scalability, and performance, while highlighting the wide range of electronic properties exhibited by organic materials, which are critical for their performances in optoelectronic devices. Furthermore, it addresses the need for further research and development in this field to achieve consistent performance across different types of devices. Full article

AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of Al_xGa_1−xN films with high Al fractions (60–87%) grown on sapphire substrates, including AlN nucleation and buffer layers, by metal–organic chemical vapor deposition (MOCVD). They were initially investigated by high-resolution X-ray diffraction (HR-XRD) and Raman scattering (RS). A set of formulas was deduced to precisely determine x(Al) from HR-XRD data. Screw dislocation densities in AlGaN and AlN layers were deduced. DUV (266 nm) excitation RS clearly exhibits AlGaN Raman features far superior to visible RS. The simulation on the AlGaN longitudinal optical (LO) phonon modes determined the carrier concentrations in the AlGaN layers. The spatial correlation model (SCM) analyses on E₂(high) modes examined the AlGaN and AlN layer properties. These high-x(Al) Al_xGa_1−xN films possess large energy gaps E_g in the range of 5.0–5.6 eV and are excited by a DUV 213 nm (5.8 eV) laser for room temperature (RT) photoluminescence (PL) and temperature-dependent photoluminescence (TDPL) studies. The obtained RTPL bands were deconvoluted with two Gaussian bands, indicating cross-bandgap emission, phonon replicas, and variation with x(Al). TDPL spectra at 20–300 K of Al_0.87Ga_0.13N exhibit the T-dependences of the band-edge luminescence near 5.6 eV and the phonon replicas. According to the Arrhenius fitting diagram of the TDPL spectra, the activation energy (19.6 meV) associated with the luminescence process is acquired. In addition, the combined PL and time-resolved photoluminescence (TRPL) spectroscopic system with DUV 213 nm pulse excitation was applied to measure a typical AlGaN multiple-quantum well (MQW). The RT TRPL decay spectra were obtained at four wavelengths and fitted by two exponentials with fast and slow decay times of ~0.2 ns and 1–2 ns, respectively. Comprehensive studies on these Al-rich AlGaN epi-films and a typical AlGaN MQW are achieved with unique and significant results, which are useful to researchers in the field. Full article

The ternary blending strategy is a fundamental approach that is widely recognized in the field of organic optoelectronics. In our investigation, leveraging the inherent advantages of the ternary component blending methodology, we introduced an innovative design for organic photodetectors (OPDs) aimed at reducing the dark current density (J_d) under reverse bias. This pioneering effort involved combining two distinct conjugated molecules (IT-4F and IEICO-4F) with a conjugated polymer (PM7), resulting in a composite material characterized by a well-defined vertical phase separation. To thoroughly explore device performance variations, we utilized a comprehensive array of analytical techniques, including atomic force microscopy (AFM) cross-section methodologies and Kelvin probe force microscopy (KPFM). Through the optimization of the blend ratio (PM7:IT-4F: IEICO-4F at 1:0.8:0.2), we achieved significant advancements. The resulting OPD demonstrated an exceptional reduction in JD, reaching a remarkably low value of 4.95 × 10⁻¹⁰ A cm⁻², coupled with an ultra-high detectivity of 4.95 × 10¹³ Jones and an outstanding linear dynamic range exceeding 100 dB at 780 nm under a bias of −1V. Furthermore, the attained cutoff frequency reached an impressive 220 kHz, highlighting substantial improvements in device performance metrics. Of particular significance is the successful translation of this technological breakthrough into real-world applications, such as in heart rate sensing, underscoring its tangible utility and expanding its potential across various fields. This demonstrates its practical relevance and underscores its versatility in diverse settings. Full article

Organic photodetectors (OPDs) have garnered significant attention in fields such as image sensing, health monitoring, and wearable devices due to their exceptional performance. This review summarizes recent research advancements in materials, structures, performance, and applications of narrowband organic photodetectors, hybrid organic–inorganic perovskite photodetectors, flexible organic photodetectors (FOPDs), and photomultiplication type organic photodetectors (PM-OPDs). Organic semiconductors offer substantial potential in optoelectronic devices owing to their low cost, ease of processing, and tunable spectral response. Hybrid perovskite materials extend the spectral response range, FOPDs meet the demands of wearable devices, and PM-OPDs enhance sensitivity, allowing for the detection of weak light signals. Through innovations in materials, structural optimization, and improvements in manufacturing processes, the performance of OPDs has seen significant enhancement. This article also explores the application prospects of these technologies in medical monitoring, optical communications, and image sensing. Full article