Search Results (38)

In the present work, we present the process of preparing CdS nanostructures based on templating synthesis using chemical deposition (CD) on a SiO₂/Si substrate. A 0.7 μm thick silicon dioxide film was thermally prepared on the surface of an n-type conduction Si wafer, followed by the creation of latent ion tracks on the film by irradiating them with swift heavy Xe ions with an energy of 231 MeV and a fluence of 10⁸ cm⁻². As a result of etching in hydrofluoric acid solution (4%), pores in the form of truncated cones with different diameters were formed. The filling of the nanopores with cadmium sulfide was carried out via templated synthesis using CD methods on a SiO_2 nanopores/Si substrate for 20–40 min. After CdS synthesis, the surfaces of nanoporous SiO_2 nanopores/Si were examined using a scanning electron microscope to determine the pore sizes and the degree of pore filling. The crystal structure of the filled silica nanopores was investigated using X-ray diffraction, which showed CdS nanocrystals with an orthorhombic structure with symmetry group 59 Pmmn observed at 2θ angles of 61. 48° and 69.25°. Photoluminescence spectra were recorded at room temperature in the spectral range of 300–800 nm at an excitation wavelength of 240 nm, where emission bands centered around 2.53 eV, 2.45 eV, and 2.37 eV were detected. The study of the CVCs showed that, with increasing forward bias voltage, there was a significant increase in the forward current in the samples with a high degree of occupancy of CdS nanoparticles, which showed the one-way electronic conductivity of CdS/SiO₂/Si nanostructures. For the first time, CdS nanostructures with orthorhombic crystal structure were obtained using track templating synthesis, and the density of electronic states was modeled using quantum–chemical calculations. Comparative analysis of experimental and calculated data of nanostructure parameters showed good agreement and are confirmed by the results of other authors. Full article

Nanogrooves with high aspect ratios possess small size effects and high-precision optical control capabilities, as well as high specific surface area and catalytic performance, demonstrating significant application value in the fields of optics, semiconductor processes, and biosensing. However, existing manufacturing methods face issues such as complexity, high costs, low efficiency, and low precision, especially in the difficulty of fabricating nanogrooves with high resolution on the nanoscale. This study proposes a method based on focused ion beam technology and a layer-by-layer etching process, successfully preparing V-shaped and rectangular nanogrooves on a silicon dioxide substrate. Combining with cellular automaton algorithm, the ion sputtering flux and redeposition model was simulated. By converting three-dimensional grooves to discrete rectangular slices through a continuous etching process and utilizing the sputtering and redeposition effects of gallium ion beams, high-aspect-ratio V-shaped grooves with up to 9.6:1 and rectangular grooves with nearly vertical sidewalls were achieved. In addition, the morphology and composition of the V-shaped groove sidewall were analyzed in detail using transmission electron microscopy (TEM) and tomography techniques. The influence of the etching process parameters (ion current, dwell time, scan times, and pixel overlap ratio) on groove size was analyzed, and the optimized process parameters were obtained. Full article

Highly selective etching of silicon nitride (Si₃N₄) and silicon dioxide (SiO₂) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si₃N₄ and SiO₂ in an NF₃/O₂ radio-frequency glow discharge. The etch rate linearly depended on the source and bias powers, whereas the etch selectivity was affected by the power and ratio of the gas mixture. We found that the selectivity can be controlled by lowering the power with a suitable gas ratio, which affects the surface reaction during the etching process. X-ray photoelectron spectroscopy of the Si₃N₄ and QMS measurements support the effect of surface reaction on the selectivity change by surface oxidation and nitrogen reduction with the increasing flow of O₂. We suggest that the creation of SiO_xN_y bonds on the surface by NO oxidation is the key mechanism to change the etch selectivity of Si₃N₄ over SiO₂. Full article

Metasurface holograms, with the capability to manipulate spatial light amplitudes and phases, are considered next-generation solutions for holographic imaging. However, conventional fabrication approaches for meta-atoms are heavily dependent on electron-beam lithography (EBL), a technique known for its expensive and time-consuming nature. In this paper, a polarization-insensitive metasurface hologram is proposed using a cost-effective and rapid nanoimprinting method with titanium dioxide (TiO₂) nanoparticle loaded polymer (NLP). Based on a simulation, it has been found that, despite a reduction in the aspect ratio of meta-atoms of nearly 20%, which is beneficial to silicon master etching, NLP filling, and the mold release processes, imaging efficiency can go up to 54% at wavelength of 532 nm. In addition, it demonstrates acceptable imaging quality at wavelengths of 473 and 671 nm. Moreover, the influence of fabrication errors and nanoimprinting material degradation in terms of residual layer thickness, meta-atom loss or fracture, thermal-induced dimensional variation, non-uniform distribution of TiO₂ particles, etc., on the performance is investigated. The simulation results indicate that the proposed device exhibits a high tolerance to these defects, proving its applicability and robustness in practice. Full article

Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO₂) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiN_x:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time $t_{\mathrm{anneal}}$ = 30 min and an annealing temperature 600 °C ≤ $T_{\mathrm{anneal}}$≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature $T_{\mathrm{anneal}}$ = 985 °C, the reactivated layers show high sheet conductance (G_sh) with G_sh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iV_OC) reaching iV_OC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p⁺⁺-poly-Si/SiO₂ contact passivation layers. Full article

This study develops a photovoltaic microgenerator based on the complementary metal oxide semiconductor (CMOS) process. The photovoltaic microgenerator converts the absorbed light energy into electrical energy using the photovoltaic effect. The material for the photovoltaic microgenerator is silicon, and its structure consists of patterned p–n junctions. The design of the photovoltaic microgenerator utilizes a grid-like shape, forming a large-area p–n junction with a patterned p-doping and N-well structure to enhance the photocurrent and improve the device’s performance. The photovoltaic microgenerator is fabricated employing the CMOS process with post-processing step. Post-processing is applied to enhance the microgenerator’s light absorption and energy-conversion efficiency. This involves using wet etching with buffered-oxide etch (BOE) to remove the silicon dioxide layer above the p–n junctions, allowing direct illumination of the p–n junctions. The area of the photovoltaic microgenerator is 0.79 mm². The experimental results show that under an illumination intensity of 1000 W/m², the photovoltaic microgenerator exhibits an open-circuit voltage of 0.53 V, a short-circuit current of 233 µA, a maximum output power of 99 µW, a fill factor of 0.8, and an energy-conversion efficiency of 12.5%. Full article

Passivated, selective contacts in silicon solar cells consist of a double layer of highly doped polycrystalline silicon (poly Si) and thin interfacial silicon dioxide (SiO₂). This design concept allows for the highest efficiencies. Here, we report on a selective laser activation process, resulting in highly doped p⁺⁺-type poly Si on top of the SiO₂. In this double-layer structure, the p⁺⁺-poly Si layer serves as a layer for transporting the generated holes from the bulk to a metal contact and, therefore, needs to be highly conductive for holes. High boron-doping of the poly Si layers is one approach to establish the desired high conductivity. In a laser activation step, a laser pulse melts the poly Si layer, and subsequent rapid cooling of the Si melt enables electrically active boron concentrations exceeding the solid solubility limit. In addition to the high conductivity, the high active boron concentration in the poly Si layer allows maskless patterning of p⁺⁺-poly Si/SiO₂ layers by providing an etch stop layer in the Si etchant solution, which results in a locally structured p⁺⁺-poly Si/SiO₂ after the etching process. The challenge in the laser activation technique is not to destroy the thin SiO₂, which necessitates fine tuning of the laser process. In order to find the optimal processing window, we test laser pulse energy densities (H_p) in a broad range of 0.7 J/cm² ≤ H_p ≤ 5 J/cm² on poly Si layers with two different thicknesses d_{poly Si,1} = 155 nm and d_{poly Si,2} = 264 nm. Finally, the processing window 2.8 J/cm²≤ H_p ≤ 4 J/cm² leads to the highest sheet conductance (G_sh) without destroying the SiO₂ for both poly Si layer thicknesses. For both tested poly Si layers, the majority of the symmetric lifetime samples processed using these H_p achieve a good passivation quality with a high implied open circuit voltage (iV_OC) and a low saturation current density (J₀). The best sample achieves iV_OC = 722 mV and J₀ = 6.7 fA/cm² per side. This low surface recombination current density, together with the accompanying measurements of the doping profiles, suggests that the SiO₂ is not damaged during the laser process. We also observe that the passivation quality is independent of the tested poly Si layer thicknesses. The findings of this study show that laser-activated p⁺⁺-poly Si/SiO₂ are not only suitable for integration into advanced passivated contact solar cells, but also offer the possibility of maskless patterning of these stacks, substantially simplifying such solar cell production. Full article

Herein, we encapsulated modified silicon carbide nanoparticles utilizing a metal–organic backbone. E-SiC-FeZnZIF composites were successfully prepared via Fe doping. The catalysis activity of this bifunctional composite material was evaluated by the degradation of tetracycline (THC) and carbamazepine (CBZ) and the reduction of carbon dioxide (CO₂). Nano SiC has received widespread attention in advanced oxidation applications, especially in the catalytic activation of peroxymonosulfate (PMS). However, the inferior activity of SiC has severely restricted its practical use. In this study of dual functional composite materials, nano SiC was firstly etched under aqueous alkali. Then, zeolite imidazolate frame-8 (ZIF-8) was used for immobilization. The filling of the etched nano SiC with FeZnZiF was confirmed by SEM, XRD, FTIR, BET, and XPS analyses. In addition, E-SiC-FeZnZIF exhibited excellent catalytic activation of peroxymonosulfate (PMS) to oxidize water pollutants, which can degrade tetracycline hydrochloride (THC), achieving a removal rate of 72% within 60 min. Moreover, E-SiC-FeZnZIF exhibited a relatively high CO₂ reduction rate with H₂O. The yields of CO and CH₄ were 0.085 and 0.509 μmol g⁻¹, respectively, after 2 h, which are higher than that of 50 nm of commercial SiC (CO: 0.084 μmol g⁻¹; CH₄: 0.209 μmol g⁻¹). This work provides a relatively convenient synthesis path for constructing metal skeleton composites for advanced oxidation and photocatalytic applications. This will have practical significance in protecting water bodies and reducing CO₂, which are vital not only for maintaining the natural ecological balance and negative feedback regulation, but also for creating a new application carrier based on nano silicon carbide. Full article

We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor (MIS-HFET) without the need for a gate recess process. The AlN film deposited by PEALD exhibited a crystalline structure, not an amorphous one. The enhanced polarization effect of introducing the PEALD AlN film on a thin AlGaN barrier was confirmed through electrical analysis. To fabricate the E-mode AlGaN/GaN MIS-HFET, the PEALD AlN film was deposited on a 4.5 nm AlGaN barrier layer and then a damage-free wet etching process was used to open the gate region. The MIS-gate structure was formed by depositing a 15 nm plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide (SiO₂) film. The fabricated thin-AlGaN/GaN MIS-HFET demonstrated successful E-mode operation, with a threshold voltage of 0.45 V, an on/off ratio of approximately 10⁹, a specific on-resistance of 7.1 mΩ·cm², and an off-state breakdown voltage exceeding 1100 V. Full article

Increasing requirements for neural implantation are helping to expand our understanding of nervous systems and generate new developmental approaches. It is thanks to advanced semiconductor technologies that we can achieve the high-density complementary metal-oxide-semiconductor electrode array for the improvement of the quantity and quality of neural recordings. Although the microfabricated neural implantable device holds much promise in the biosensing field, there are some significant technological challenges. The most advanced neural implantable device relies on complex semiconductor manufacturing processes, which are required for the use of expensive masks and specific clean room facilities. In addition, these processes based on a conventional photolithography technique are suitable for mass production, which is not applicable for custom-made manufacturing in response to individual experimental requirements. The microfabricated complexity of the implantable neural device is increasing, as is the associated energy consumption, and corresponding emissions of carbon dioxide and other greenhouse gases, resulting in environmental deterioration. Herein, we developed a fabless fabricated process for a neural electrode array that was simple, fast, sustainable, and customizable. An effective strategy to produce conductive patterns as the redistribution layers (RDLs) includes implementing microelectrodes, traces, and bonding pads onto the polyimide (PI) substrate by laser micromachining techniques combined with the drop coating of the silver glue to stack the laser grooving lines. The process of electroplating platinum on the RDLs was performed to increase corresponding conductivity. Sequentially, Parylene C was deposited onto the PI substrate to form the insulation layer for the protection of inner RDLs. Following the deposition of Parylene C, the via holes over microelectrodes and the corresponding probe shape of the neural electrode array was also etched by laser micromachining. To increase the neural recording capability, three-dimensional microelectrodes with a high surface area were formed by electroplating gold. Our eco-electrode array showed reliable electrical characteristics of impedance under harsh cyclic bending conditions of over 90 degrees. For in vivo application, our flexible neural electrode array demonstrated more stable and higher neural recording quality and better biocompatibility as well during the 2-week implantation compared with those of the silicon-based neural electrode array. In this study, our proposed eco-manufacturing process for fabricating the neural electrode array reduced 63 times of carbon emissions compared to the traditional semiconductor manufacturing process and provided freedom in the customized design of the implantable electronic devices as well. Full article

As semiconductor devices become miniaturized, the importance of the molecular-level understanding of the fabrication processes is growing. Titanium nitride (TiN) is an important material utilized in various architectural components of semiconductor devices requiring precise control over size and shape. A reported process for atomic layer etching (ALE) of TiN involves surface oxidation into titanium oxide (TiO₂) and selective oxidized layer removal by hydrogen fluoride (HF). However, the chemical selectivity of these Ti-based materials in the etching process by HF remains unclear. In this study, computational chemistry methods utilizing density functional theory (DFT) calculations were applied to the fluorination reactions of TiN, TiO₂, and SiO₂ to identify and compare the surface chemical reactivity of these substrates toward etching processes. It is shown that the materials can be etched using HF, leaving TiF₄ and SiF₄ as the byproducts. However, while such a TiN reaction is thermodynamically hindered, the etching of TiO₂ and SiO₂ is suggested to be favorable. Our study provides theoretical insights into the fluorination reactivity of TiN, which has not been reported previously regardless of technological importance. Furthermore, we explore the etching selectivity between TiN, TiO₂, and SiO₂, which is a crucial factor in the ALE process conditions of TiN. Full article

This study develops a TEMH (thermoelectric energy micro harvester) chip utilizing a commercial 0.18 μm CMOS (complementary metal oxide semiconductor) process. The chip contains a TEMH and temperature sensors. The TEMH is established using a series of 54 thermocouples. The use of the temperature sensors monitors the temperature of the thermocouples. One temperature sensor is set near the cold part of the thermocouples, and the other is set near the hot part of the thermocouples. The performance of the TEMH relies on the TD (temperature difference) at the CHP (cold and hot parts) of the thermocouples. The more the TD at the CHP of the thermocouples increases, the higher the output voltage and output power of the TEMH become. To obtain a higher TD, the cold part of the thermocouples is designed as a suspended structure and is combined with cooling sheets to increase heat dissipation. The cooling sheet is constructed of a stack of aluminum layers and is mounted above the cold part of the thermocouple. A finite element method software, ANSYS, is utilized to compute the temperature distribution of the TEMH. The TEMH requires a post-process to obtain the suspended thermocouple structure. The post-process utilizes an RIE (reactive ion etch) to etch the two sacrificial materials, which are silicon dioxide and silicon substrate. The results reveal that the structure of the thermocouples is completely suspended and does not show any injury. The measured results reveal that the output voltage of the TEMH is 32.5 mV when the TD between the CHP of the thermocouples is 4 K. The TEMH has a voltage factor of 8.93 mV/mm²K. When the TD between the CHP of the thermocouples is 4 K, the maximum output power of the TEMH is 4.67 nW. The TEMH has a power factor of 0.31 nW/mm²K². Full article

We demonstrate a method for fabricating and utilizing an optofluidic particle manipulator on a silicon chip that features a 300 nm thick silicon dioxide membrane as part of a microfluidic channel. The fabrication method is based on etching silicon channels and converting the walls to silicon dioxide through thermal oxidation. Channels are encapsulated by a sacrificial polymer which fills the length of the fluid channel by way of spontaneous capillary action. The sacrificial material is then used as a mold for the formation of a nanoscale, solid-state, silicon dioxide membrane. The hollow channel is primarily used for fluid and particle transport but is capable of transmitting light over short distances and utilizes radiation pressure for particle trapping applications. The optofluidic platform features solid-core ridge waveguides which can direct light on and off of the silicon chip and intersect liquid channels. Optical loss values are characterized for liquid and solid-core structures and at interfaces. Estimates are provided for the optical power needed to trap particles of various sizes. Full article

Silicon nanoparticles are used to enhance the anode specific capacity for the lithium-ion cell technology. Due to the mechanical deficiencies of silicon during lithiation and delithiation, one of the many strategies that have been proposed consists of enwrapping the silicon nanoparticles with graphene and creating a void area between them so as to accommodate the large volume changes that occur in the silicon nanoparticle. This work aims to investigate the electrochemical performance and the associated kinetics of the hollow outer shell nanoparticles. To this end, we prepared hollow outer shell silicon nanoparticles (nps) enwrapped with graphene by using thermally grown silicon dioxide as a sacrificial layer, ball milling to enwrap silicon particles with graphene and hydro fluorine (HF) to etch the sacrificial SiO₂ layer. In addition, in order to offer a wider vision on the electrochemical behavior of the hollow outer shell Si nps, we also prepared all the possible in-between process stages of nps and corresponding electrodes (i.e., bare Si nps, bare Si nps enwrapped with graphene, Si/SiO₂ nps and Si/SiO₂ nps enwrapped with graphene). The morphology of all particles revealed the existence of graphene encapsulation, void, and a residual layer of silicon dioxide depending on the process of each nanoparticle. Corresponding electrodes were prepared and studied in half cell configurations by means of galvanostatic cycling, cyclic voltammetry and electrochemical impedance spectroscopy. It was observed that nanoparticles encapsulated with graphene demonstrated high specific capacity but limited cycle life. In contrast, nanoparticles with void and/or SiO₂ were able to deliver improved cycle life. It is suggested that the existence of the void and/or residual SiO₂ layer limits the formation of rich Li_XSi alloys in the core silicon nanoparticle, providing higher mechanical stability during the lithiation and delithiation processes. Full article

Porous silicon is of current interest for cardiac tissue engineering applications. While porous silicon is considered to be a biocompatible material, it is important to assess whether post-etching surface treatments can further improve biocompatibility and perhaps modify cellular behavior in desirable ways. In this work, porous silicon was formed by electrochemically etching with hydrofluoric acid, and was then treated with oxygen plasma or supercritical carbon dioxide (scCO₂). These processes yielded porous silicon with a thickness of around 4 μm. The different post-etch treatments gave surfaces that differed greatly in hydrophilicity: oxygen plasma-treated porous silicon had a highly hydrophilic surface, while scCO₂ gave a more hydrophobic surface. The viabilities of H9c2 cardiomyocytes grown on etched surfaces with and without these two post-etch treatments was examined; viability was found to be highest on porous silicon treated with scCO₂. Most significantly, the expression of some key genes in the angiogenesis pathway was strongly elevated in cells grown on the scCO₂-treated porous silicon, compared to cells grown on the untreated or plasma-treated porous silicon. In addition, the expression of several apoptosis genes were suppressed, relative to the untreated or plasma-treated surfaces. Full article