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Keywords = substrate integrated suspended line (SISL)

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22 pages, 6682 KB  
Article
An FR4-Based Oscillator Loading an Additional High-Q Cavity for Phase Noise Reduction Using SISL Technology
by Jingwen Han, Ningning Yan and Kaixue Ma
Electronics 2025, 14(15), 3041; https://doi.org/10.3390/electronics14153041 - 30 Jul 2025
Viewed by 242
Abstract
An FR4-based X-band low phase noise oscillator loading an additional high-Q cavity resonator was designed in this study using substrate-integrated suspended line (SISL) technology. The additional resonator was coupled to an oscillator by the transmission line (coupling TL). The impact of the [...] Read more.
An FR4-based X-band low phase noise oscillator loading an additional high-Q cavity resonator was designed in this study using substrate-integrated suspended line (SISL) technology. The additional resonator was coupled to an oscillator by the transmission line (coupling TL). The impact of the additional resonator on startup conditions, Q factor enhancement, and phase noise reduction was thoroughly investigated. Three oscillators loading an additional high-Q cavity resonator, loading an additional high-Q cavity resonator and performing partial dielectric extraction, and loading an original parallel feedback oscillator for comparison were presented. The experimental results showed that the proposed oscillator had a low phase noise of −131.79 dBc/Hz at 1 MHz offset from the carrier frequency of 10.088 GHz, and the FOM was −197.79 dBc/Hz. The phase noise was reduced by 1.66 dB through loading the additional resonator and further reduced by 1.87 dB through partially excising the substrate. To the best of our knowledge, the proposed oscillator showed the lowest phase noise and FOM compared with other all-FR4-based oscillators. The cost of fabrication was markedly reduced. The proposed oscillator also has the advantages of compact size and self-packaging properties. Full article
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15 pages, 8085 KB  
Article
A Ka-Band Two-Channel Two-Beam Receiver Based on a Substrate-Integrated Suspended Line
by Hui Xu, Kaixue Ma, Shuantao Li, Gaojian Liu and Yongqiang Wang
Electronics 2024, 13(8), 1582; https://doi.org/10.3390/electronics13081582 - 21 Apr 2024
Cited by 1 | Viewed by 1265
Abstract
To realize the miniaturization and high performance for the key transceiver components of a phased array antenna, we proposed a two-channel two-beam receiver based on a substrate-integrated suspended-line (SISL). Multi-layer composite substrate printing circuit is used in the SISL structure to replace the [...] Read more.
To realize the miniaturization and high performance for the key transceiver components of a phased array antenna, we proposed a two-channel two-beam receiver based on a substrate-integrated suspended-line (SISL). Multi-layer composite substrate printing circuit is used in the SISL structure to replace the metal cavity and passive circuits. The active components are placed in the air cavity in the SISL structure. The substrates forming the cavity are soldered together to ensure the hermetic seal and high performance. The SISL circuits have the advantage of low loss, low cost, light weight, self-packaging, and high inter-channel isolation. The proposed Ka-band two-channel two-beam receiver shows a gain of >28 dB, a noise figure of <2.6 dB, with functions of 6-bit phase shifting and attenuation. Full article
(This article belongs to the Section Microwave and Wireless Communications)
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12 pages, 8616 KB  
Communication
A Filtering Antenna with Slots and Stacked Patch Based on SISL for 5G Communications
by Ningning Yan, Hetian Zhou and Kaixue Ma
Electronics 2023, 12(6), 1331; https://doi.org/10.3390/electronics12061331 - 10 Mar 2023
Cited by 5 | Viewed by 3321
Abstract
A filtering antenna based on the Substrate Integrated Suspended Line (SISL) platform applied for the n78 band of 5G is presented in this paper. The antenna has a segmented feed line, a rectangular driven patch etched with a double I-slot, and a squared [...] Read more.
A filtering antenna based on the Substrate Integrated Suspended Line (SISL) platform applied for the n78 band of 5G is presented in this paper. The antenna has a segmented feed line, a rectangular driven patch etched with a double I-slot, and a squared stacked patch with grooves at the edges of both sides. The etched slots and the stacked patch introduce two new resonance frequencies increasing the bandwidth. Furthermore, the etched slots excite a deep radiation null in the low-frequency band, and the stacked patch coupled with the driven patch produces two deep radiation nulls in the high-frequency band. Three radiation nulls enable high selectivity of the antenna. The filtering antenna works at 3.2–3.89 GHz, which can be applied to the 5G (n78, 3.3–3.8 GHz) frequency band. The peak gain in the band can reach 9.21 dBi, and the out-of-band suppression levels are higher than 18.47 dB. Full article
(This article belongs to the Special Issue Substrate Integrated Circuits and Antennas)
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