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83 Results Found

  • Proceeding Paper
  • Open Access
1 Citations
5,400 Views
5 Pages

The realization of 30 µm-deep trench isolation in a linear array of butt-coupled 3D CMOS silicon photodetectors is investigated by implementing the formation of a shallow n+-p junction and SiO2-liner over the trench sidewalls as well as the SU-8 fill...

  • Article
  • Open Access
6 Citations
2,737 Views
17 Pages

Field Testing and Numerical Simulation of the Effectiveness of Trench Isolation for Reducing Vibration Due to Dynamic Compaction

  • Yonglai Zheng,
  • Xin Lan,
  • Tanbo Pan,
  • Dingding Cui,
  • Guangxin Li,
  • Longyin Shen and
  • Xubing Xu

28 August 2023

Dynamic compaction is a widely used method to strengthen the foundation, which can cause significant impacts on surrounding structures, making vibration control measures necessary. This study investigates the effectiveness of isolation trenches in re...

  • Article
  • Open Access
14 Citations
7,820 Views
20 Pages

High-Performance Shuffle Motor Fabricated by Vertical Trench Isolation Technology

  • Edin Sarajlic,
  • Christophe Yamahata,
  • Erwin Berenschot,
  • Niels Tas,
  • Hiroyuki Fujita and
  • Gijs Krijnen

16 July 2010

Shuffle motors are electrostatic stepper micromotors that employ a built-in mechanical leverage to produce large output forces as well as high resolution displacements. These motors can generally move only over predefined paths that served as driving...

  • Article
  • Open Access
2,757 Views
12 Pages

Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology

  • Shaochen Gao,
  • Duc-Tung Vu,
  • Thibauld Cazimajou,
  • Patrick Pittet,
  • Martine Le Berre,
  • Mohammadreza Dolatpoor Lakeh,
  • Fabien Mandorlo,
  • Régis Orobtchouk,
  • Jean-Baptiste Schell and
  • Francis Calmon
  • + 4 authors

The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and a silicon film containing transistors makes it possible to realize a 3D SPAD at the chip le...

  • Article
  • Open Access
15 Citations
10,889 Views
14 Pages

28 May 2020

The photodiode in the backside-illuminated CMOS sensor is modeled to analyze the optical performances in a range of wavelengths (300–1100 nm). The effects of changing in the deep trench isolation depth (DTI) and pitch size (d) of the inverted p...

  • Article
  • Open Access
6 Citations
5,941 Views
14 Pages

A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting

  • Jun Ogi,
  • Fumiaki Sano,
  • Tatsuya Nakata,
  • Yoshiki Kubo,
  • Wataru Onishi,
  • Charith Koswaththage,
  • Takeya Mochizuki,
  • Yoshiaki Tashiro,
  • Kazuki Hizu and
  • Yusuke Oike
  • + 4 authors

1 November 2023

In this study, a 3.06 μm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce...

  • Article
  • Open Access
2 Citations
1,858 Views
14 Pages

10 May 2025

In this contribution, we explored the interplay of guard ring (GR) configuration and isolation structures, as well as irradiation effects, which all together create a rich landscape of phenomena such as self-induced signals (“ghosts”) in...

  • Article
  • Open Access
4 Citations
4,794 Views
11 Pages

The Pass Gate Effect (PGE), often referred to as adjacent cell interference, presents a significant challenge in dynamic random-access memory (DRAM). In this study, we investigate the impact of PGE and propose innovative solutions to address this iss...

  • Article
  • Open Access
10 Citations
3,922 Views
16 Pages

31 March 2022

When tests are conducted on the field slope under artificial rainfall, because artificial rainfall is often limited to implementation in the mode of local rainfall, there is a boundary constraint effect between the rainfall area and the non-rainfall...

  • Article
  • Open Access
2 Citations
2,074 Views
26 Pages

11 April 2025

Many cities around the world are developing over-track buildings above metro depots to achieve efficient and economical land use. However, the vibrations generated by frequent train operations have a significant impact on the over-track buildings. Th...

  • Article
  • Open Access
13 Citations
2,813 Views
12 Pages

17 January 2024

Fungi are important resource for the discovery of novel bioactive natural products. This study investigated the metabolites produced by Mariana-Trench-associated fungus Aspergillus sp. SY2601 in EY liquid and rice solid media, resulting in the isolat...

  • Article
  • Open Access
15 Citations
7,117 Views
10 Pages

26 October 2019

The demand for a high-resolution metal-oxide-semiconductor (CMOS) image sensor has increased in recent years, and pixel size has shrunk below 1.0 μm to allow accumulation of numerous pixels in a limited area. However, shrinking the pixel size lowe...

  • Article
  • Open Access
2,863 Views
31 Pages

15 November 2024

This research develops and evaluates a recyclable corrugated cardboard vibration isolation box reinforced with balsa wood as an alternative to traditional open trench methods for mitigating ground-borne environmental body waves. This study includes d...

  • Project Report
  • Open Access
6 Citations
12,196 Views
13 Pages

27 December 2022

This study concerns the development of a gap-fill process technology for isolating trench patterns. There are various gap-filling techniques in the case of trench patterns; nevertheless, a processing technology adopting the DED (deposition/etch/depos...

  • Article
  • Open Access
6 Citations
5,851 Views
10 Pages

Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range

  • Dongsuk Yoo,
  • Youngtae Jang,
  • Youngchan Kim,
  • Jihun Shin,
  • Kangsun Lee,
  • Seok-Yong Park,
  • Seungho Shin,
  • Hongsuk Lee,
  • Seojoo Kim and
  • JungChak Ahn
  • + 17 authors

13 November 2023

An automotive 2.1 μm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology. To achieve a high dynamic range, we employ a sub-pixel structure featuring a high conversion gain of a la...

  • Article
  • Open Access
5 Citations
3,934 Views
10 Pages

The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology

  • Mingzhu Li,
  • Xiaowu Cai,
  • Chuanbin Zeng,
  • Xiaojing Li,
  • Tao Ni,
  • Juanjuan Wang,
  • Duoli Li,
  • Fazhan Zhao and
  • Zhengsheng Han

11 February 2022

In this work, the electrostatic discharge (ESD) characteristics of a pMOS-triggered bidirectional silicon-controlled rectifier (PTBSCR) that was fabricated in a 0.18 μm silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, is investigated. T...

  • Feature Paper
  • Article
  • Open Access
18 Citations
11,242 Views
8 Pages

Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications

  • Francois Roy,
  • Andrej Suler,
  • Thomas Dalleau,
  • Romain Duru,
  • Daniel Benoit,
  • Jihane Arnaud,
  • Yvon Cazaux,
  • Catherine Chaton,
  • Laurent Montes and
  • Guo-Neng Lu
  • + 1 author

28 January 2020

Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal–oxide–semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, cha...

  • Article
  • Open Access
223 Views
17 Pages

13 February 2026

This study analyzed the low-frequency noise characteristics of nanosheet field-effect transistors (NSFETs) using technology computer-aided design (TCAD) simulations. In particular, the effects of shallow trench isolation (STI) depth and gate–in...

  • Article
  • Open Access
1,265 Views
11 Pages

29 August 2024

In this paper, a novel 120 V-class silicon Schottky contact super barrier rectifier with a deep isolated MOS trench in an epitaxial n-drift layer (DOT-SSBR) is studied through experiments, featuring the deep isolated MOS trenches (DOTs) in an epitaxi...

  • Article
  • Open Access
15 Citations
6,103 Views
19 Pages

Biotechnological and Ecological Potential of Micromonospora provocatoris sp. nov., a Gifted Strain Isolated from the Challenger Deep of the Mariana Trench

  • Wael M. Abdel-Mageed,
  • Lamya H. Al-Wahaibi,
  • Burhan Lehri,
  • Muneera S. M. Al-Saleem,
  • Michael Goodfellow,
  • Ali B. Kusuma,
  • Imen Nouioui,
  • Hariadi Soleh,
  • Wasu Pathom-Aree and
  • Andrey V. Karlyshev
  • + 1 author

25 April 2021

A Micromonospora strain, isolate MT25T, was recovered from a sediment collected from the Challenger Deep of the Mariana Trench using a selective isolation procedure. The isolate produced two major metabolites, n-acetylglutaminyl glutamine amide and d...

  • Article
  • Open Access
6 Citations
5,640 Views
23 Pages

Method for Keyhole-Free High-Aspect-Ratio Trench Refill by LPCVD

  • Henk-Willem Veltkamp,
  • Yves L. Janssens,
  • Meint J. de Boer,
  • Yiyuan Zhao,
  • Remco J. Wiegerink,
  • Niels R. Tas and
  • Joost C. Lötters

4 November 2022

In micro-machined micro-electromechanical systems (MEMS), refilled high-aspect-ratio trench structures are used for different applications. However, these trenches often show keyholes, which have an impact on the performance of the devices. In this p...

  • Article
  • Open Access
20 Citations
6,141 Views
17 Pages

Whole Genome Sequence of Dermacoccus abyssi MT1.1 Isolated from the Challenger Deep of the Mariana Trench Reveals Phenazine Biosynthesis Locus and Environmental Adaptation Factors

  • Wael M. Abdel-Mageed,
  • Bertalan Juhasz,
  • Burhan Lehri,
  • Ali S. Alqahtani,
  • Imen Nouioui,
  • Dawrin Pech-Puch,
  • Jioji N. Tabudravu,
  • Michael Goodfellow,
  • Jaime Rodríguez and
  • Andrey V. Karlyshev
  • + 1 author

25 February 2020

Dermacoccus abyssi strain MT1.1T is a piezotolerant actinobacterium that was isolated from Mariana Trench sediment collected at a depth of 10898 m. The organism was found to produce ten dermacozines (A‒J) that belonged to a new phenazine family and w...

  • Article
  • Open Access
11 Citations
7,918 Views
6 Pages

Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors

  • Young Kwon Kim,
  • Jin Sung Lee,
  • Geon Kim,
  • Taesik Park,
  • Hui Jung Kim,
  • Young Pyo Cho,
  • Young June Park and
  • Myoung Jin Lee

In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in ter...

  • Article
  • Open Access
6 Citations
5,751 Views
22 Pages

3 June 2021

Three dermacozines, dermacozines N–P (13), were isolated from the piezotolerant Actinomycete strain Dermacoccus abyssi MT 1.1T, which was isolated from a Mariana Trench sediment in 2006. Herein, we report the elucidation of their structures using a...

  • Article
  • Open Access
2,130 Views
19 Pages

Hadal zones account for the deepest 45% of oceanic depth range and play an important role in ocean biogeochemical cycles. As the least-explored aquatic habitat on earth, further investigation is still required to fully elucidate the microbial taxonom...

  • Article
  • Open Access
7 Citations
3,881 Views
13 Pages

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

  • Aakashdeep Gupta,
  • K Nidhin,
  • Suresh Balanethiram,
  • Shon Yadav,
  • Anjan Chakravorty,
  • Sebastien Fregonese and
  • Thomas Zimmer

In this part, we propose a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon based multifinger bipolar transistor structure. First we provide a physics-based formulation to find out the coupling facto...

  • Article
  • Open Access
933 Views
17 Pages

4 September 2025

Elevated railways are a crucial component of railway lines, characterized by their widespread distribution, simple structure, and low cost, while actively promoting local economic development. However, they also cause significant ground vibrations wh...

  • Article
  • Open Access
9 Citations
3,537 Views
18 Pages

A Comprehensive Characterization of the TI-LGAD Technology

  • Matias Senger,
  • Anna Macchiolo,
  • Ben Kilminster,
  • Giovanni Paternoster,
  • Matteo Centis Vignali and
  • Giacomo Borghi

7 July 2023

Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or fill fac...

  • Article
  • Open Access
5 Citations
1,937 Views
14 Pages

5 September 2023

Environmental vibration pollution has serious negative impacts on human health. Among the various contributors to environmental vibration pollution in urban areas, rail transit vibration stands out as a significant source. Consequently, addressing th...

  • Feature Paper
  • Article
  • Open Access
7 Citations
3,936 Views
6 Pages

Thermo-Optic Phase Shifter with Interleaved Suspended Design for Power Efficiency and Speed Adjustment

  • Feng Gao,
  • Wu Xie,
  • James You Sian Tan,
  • Chew Ping Leong,
  • Chao Li,
  • Xianshu Luo and
  • Guo-Qiang Lo

8 November 2022

Conventional thermo-optic devices—which can be broadly categorized to that with and without a thermal isolation trench—typically come with a tradeoff between thermal tuning efficiency and tuning speed. Here, we propose a method that allows us to dire...

  • Article
  • Open Access
10 Citations
3,697 Views
22 Pages

27 August 2021

Surface gravity wave interaction with a semi-infinite floating elastic plate in the presence of multiple undulations has been studied under the assumption of linearized water wave theory and small amplitude structural response. The elastic plate is m...

  • Article
  • Open Access
1,128 Views
14 Pages

31 August 2025

This article proposes a novel three-dimensional trench electrode detector, named the through-type three-dimensional quasi-hemispherical electrode detector. The detector adopts a trench structure to package each independent unit and achieves complete...

  • Article
  • Open Access
4 Citations
3,903 Views
11 Pages

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation

  • Aakashdeep Gupta,
  • K Nidhin,
  • Suresh Balanethiram,
  • Shon Yadav,
  • Anjan Chakravorty,
  • Sebastien Fregonese and
  • Thomas Zimmer

In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First...

  • Article
  • Open Access
2 Citations
1,152 Views
19 Pages

Evaluation of Dynamic Compaction Load Conversion Methods and Vibration Reduction Treatments

  • Jixuan Li,
  • Wenli Wang,
  • Longping Luo,
  • Xiaoliang Yao and
  • Jiangang Hu

31 December 2024

This study aims to evaluate the accuracy of different dynamic compaction (DC) load equivalent conversion methods in DC vibration calculations. It also investigates the effect of vibration isolation treatments on the vibration reduction performance of...

  • Article
  • Open Access
28 Citations
4,314 Views
11 Pages

Bioactive Metabolites from the Mariana Trench Sediment-Derived Fungus Penicillium sp. SY2107

  • Sidra Kaleem,
  • Le Qin,
  • Wenwen Yi,
  • Xiao-Yuan Lian and
  • Zhizhen Zhang

14 May 2020

Mariana Trench sediments are enriched in microorganisms, however, the structures and bioactivities of their secondary metabolites are not very known. In this study, a fungus Penicillium sp. SY2107 was isolated from a sample of Mariana Trench sediment...

  • Article
  • Open Access
7 Citations
4,333 Views
10 Pages

High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion

  • Xinyi Wen,
  • Kwang Jae Lee,
  • Yusuke Nakazato,
  • Jaeyi Chun and
  • Srabanti Chowdhury

21 April 2023

We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transi...

  • Article
  • Open Access
2 Citations
1,838 Views
11 Pages

1 November 2023

High-purity germanium detectors, widely employed in fields such as aerospace applications based on radiation detection principles, have garnered attention due to their broad detection range and fast response time. However, these detectors often requi...

  • Article
  • Open Access
11 Citations
2,964 Views
10 Pages

Chromone Derivatives with α-Glucosidase Inhibitory Activity from the Marine Fungus Penicillium thomii Maire

  • Shouye Han,
  • Yu Liu,
  • Wan Liu,
  • Fan Yang,
  • Jia Zhang,
  • Ruifeng Liu,
  • Fenqin Zhao,
  • Wei Xu and
  • Zhongbin Cheng

31 August 2021

The fungal strain YPGA3 was isolated from the sediments of the Yap Trench and identified as Penicillium thomii. Eight new chromone derivatives, named penithochromones M−T (18), along with two known analogues, 9 and 10, were isolated from the strain....

  • Article
  • Open Access
1 Citations
2,562 Views
20 Pages

Uncovering the Prokaryotic Diversity of the Bathyal Waters above the Kuril–Kamchatka Trench

  • Susanna Gorrasi,
  • Angelika Brandt,
  • Francesca Pittino,
  • Andrea Franzetti,
  • Marcella Pasqualetti,
  • Barbara Muñoz-Palazon,
  • Giorgia Novello and
  • Massimiliano Fenice

10 November 2023

The Kuril–Kamchatka Trench (North-West Pacific Ocean) is included in the deepest trenches (>9000 m). This study is the first that aims at uncovering the bathyal prokaryotic diversity (1000–2000 m) of this fascinating extreme environmen...

  • Article
  • Open Access
861 Views
11 Pages

Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process

  • Toshifumi Yokoyama,
  • Masafumi Tsutsui,
  • Yoshiaki Nishi,
  • Yoshihiro Noguchi,
  • Masahiko Takeuchi,
  • Masahiro Oda and
  • Fenigstein Amos

16 November 2025

We developed a 2.2 µm backside-illuminated (BSI) global shutter (GS) pixel featuring true charge-domain-correlated double sampling (CDS). To enhance the inverse parasitic light sensitivity (1/PLS), we implemented a thick-film epitaxial process incorp...

  • Article
  • Open Access
22 Citations
11,592 Views
8 Pages

Second Generation Small Pixel Technology Using Hybrid Bond Stacking

  • Vincent C. Venezia,
  • Alan Chih-Wei Hsiung,
  • Wu-Zang Yang,
  • Yuying Zhang,
  • Cheng Zhao,
  • Zhiqiang Lin and
  • Lindsay A. Grant

24 February 2018

In this work, OmniVision’s second generation (Gen2) of small-pixel BSI stacking technologies is reviewed. The key features of this technology are hybrid-bond stacking, deeper back-side, deep-trench isolation, new back-side composite metal-oxide grid,...

  • Article
  • Open Access
488 Views
11 Pages

Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits

  • Sheng Li,
  • Haiwei Zhang,
  • Yanfeng Ma,
  • Qinhan Wang,
  • Ke Wang,
  • Yuanyang Xia,
  • Leke Wu,
  • Yiheng Li,
  • Tinggang Zhu and
  • Weifeng Sun
  • + 4 authors

27 November 2025

Gallium Nitride (GaN) fabricated on an insulated sapphire substrate achieves a higher rated voltage of monolithic power integrated circuits compared to that fabricated on a conductive silicon substrate. In this paper, the effectiveness of isolation a...

  • Review
  • Open Access
106 Citations
24,407 Views
23 Pages

Approaches to Disposal of Nuclear Waste

  • Michael I. Ojovan and
  • Hans J. Steinmetz

21 October 2022

We present a concise mini overview on the approaches to the disposal of nuclear waste currently used or deployed. The disposal of nuclear waste is the end point of nuclear waste management (NWM) activities and is the emplacement of waste in an approp...

  • Article
  • Open Access
7 Citations
3,642 Views
13 Pages

Exploring the Interpad Gap Region in Ultra-Fast Silicon Detectors: Insights into Isolation Structure and Electric Field Effects on Charge Multiplication

  • Gordana Laštovička-Medin,
  • Mateusz Rebarz,
  • Jovana Doknic,
  • Ivona Bozovic,
  • Gregor Kramberger,
  • Tomáš Laštovička and
  • Jakob Andreasson

28 July 2023

We present an in-depth investigation of the interpad (IP) gap region in the ultra-fast silicon detector (UFSD) Type 10, utilizing a femtosecond laser beam and the transient current technique (TCT) as probing instruments. The sensor, fabricated in the...

  • Article
  • Open Access
536 Views
22 Pages

26 September 2025

This paper investigates the influence of groundwater level fluctuations on the vibration response and isolation performance of saturated soil foundations under moving loads. A coupled model consisting of an overlying elastic layer and a saturated hal...

  • Article
  • Open Access
7 Citations
2,932 Views
12 Pages

Optical Efficiency Enhancement of Nanojet-Based Dielectric Double-Material Color Splitters for Image Sensor Applications

  • Oksana Shramkova,
  • Valter Drazic,
  • Bobin Varghese,
  • Laurent Blondé and
  • Valerie Allié

12 November 2021

We propose a new type of color splitter, which guides a selected bandwidth of incident light towards the proper photosensitive area of the image sensor by exploiting the nanojet (NJ) beam phenomenon. Such splitting can be performed as an alternative...

  • Article
  • Open Access
5 Citations
3,261 Views
10 Pages

A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process

  • Jian-Zhi Tseng,
  • Po-Jen Shih,
  • Cheng-Chih Hsu and
  • Ching-Liang Dai

11 December 2017

This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simula...

  • Article
  • Open Access
5,223 Views
14 Pages

Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process

  • Célestin Doyen,
  • Stéphane Ricq,
  • Pierre Magnan,
  • Olivier Marcelot,
  • Marios Barlas and
  • Sébastien Place

4 January 2020

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extr...

  • Article
  • Open Access
1 Citations
8,084 Views
10 Pages

The benefit of the super-junction (SJ) technique at the low-voltage (30 V) range is investigated in this work. Optimizations such as adding a buffer layer to the device have been used, but simulation and theoretical evidences show that the benefits o...

  • Article
  • Open Access
3 Citations
1,593 Views
17 Pages

9 October 2024

In view of the high-sensitivity vibration effect of precision instrument laboratory buildings under the influence of surrounding traffic loads, field micro-vibration tests under various working conditions were carried out based on actual projects. Co...

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