- Proceeding Paper
Analysis of pn Junction Deep Trench Isolation with SU-8/SiO2-Liner Passivation in a Linear Butt-Coupled 3D CMOS Si Photodetector Array
- Iman Sabri Alirezaei,
- Joerg Vierhaus and
- Edmund P. Burte
The realization of 30 µm-deep trench isolation in a linear array of butt-coupled 3D CMOS silicon photodetectors is investigated by implementing the formation of a shallow n+-p junction and SiO2-liner over the trench sidewalls as well as the SU-8 fill...