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Entropy 2013, 15(5), 1663-1689; doi:10.3390/e15051663

Application of Maximum Entropy Method to Semiconductor Engineering

Hitachi, Ltd., Yokohama Research Laboratory, 292, Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa 244-0817, Japan
Received: 15 March 2013 / Revised: 25 April 2013 / Accepted: 1 May 2013 / Published: 7 May 2013
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Abstract

The maximum entropy method (MEM) is widely used in research fields such as linguistics, meteorology, physics, and chemistry. Recently, MEM application has become a subject of interest in the semiconductor engineering field, in which devices utilize very thin films composed of many materials. For thin film fabrication, it is essential to thoroughly understand atomic-scale structures, internal fixed charges, and bulk/interface traps, and many experimental techniques have been developed for evaluating these. However, the difficulty in interpreting the data they provide prevents the improvement of device fabrication processes. As a candidate for a very practical data analyzing technique, MEM is a promising approach to solve this problem. In this paper, we review the application of MEM to thin films used in semiconductor engineering. The method provides interesting and important information that cannot be obtained with conventional methods. This paper explains its theoretical background, important points for practical use, and application results. View Full-Text
Keywords: maximum entropy method; semiconductor engineering; film structure; fixed charge; trap maximum entropy method; semiconductor engineering; film structure; fixed charge; trap
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Yonamoto, Y. Application of Maximum Entropy Method to Semiconductor Engineering. Entropy 2013, 15, 1663-1689.

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