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Energies 2017, 10(3), 384; doi:10.3390/en10030384

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

Department of Energy Technology, Aalborg University, Aalborg 9220, Denmark
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Academic Editors: Alberto Castellazzi and Andrea Irace
Received: 12 January 2017 / Revised: 21 February 2017 / Accepted: 3 March 2017 / Published: 18 March 2017
(This article belongs to the Special Issue Semiconductor Power Devices)
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Abstract

In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device. View Full-Text
Keywords: Silicon Carbide MOSFET; reliability; power semiconductors Silicon Carbide MOSFET; reliability; power semiconductors
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Baker, N.; Luo, H.; Iannuzzo, F. Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs. Energies 2017, 10, 384.

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