Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411
School of Computer Science and Electrical Engineering, Handong Global University, Pohang-si 37554, Korea
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Author to whom correspondence should be addressed.
Micromachines 2020, 11(1), 11; https://doi.org/10.3390/mi11010011
Submission received: 23 July 2019
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Accepted: 17 December 2019
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Published: 19 December 2019
(This article belongs to the Section A：Physics)
As this research is a personal achievement with no company-related information, and there is no financial support for this paper from Qualcomm Technologies Inc., the authors would like to change the affiliation, authors email addresses, and funding information in the published paper [1]. The affiliation was changed from “Qualcomm CDMA Technologies, Qualcomm Technologies Inc., San Diego, CA 92121, USA” to “School of Computer Science and Electrical Engineering, Handong Global University, Pohang-si 37554, Korea”. The email of Jaeyoung Park changed from [email protected] to [email protected], email of Young Uk Yim changed to [email protected]. The funding part changed from “This research received no external funding” to “This work was supported by the National Program for Excellence in Software at Handong Global University (2017-0-00130) funded by the Ministry of Science and ICT“.
The changes do not affect the scientific results. We apologize for any inconvenience caused to the readers. The manuscript will be updated, and the original version will remain available online on the article webpage, with a reference to this correction.
Reference
- Park, J.; Yim, Y.U. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411. [Google Scholar] [CrossRef] [Green Version]
© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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MDPI and ACS Style
Park, J.; Yim, Y.U. Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411. Micromachines 2020, 11, 11. https://doi.org/10.3390/mi11010011
AMA Style
Park J, Yim YU. Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411. Micromachines. 2020; 11(1):11. https://doi.org/10.3390/mi11010011
Chicago/Turabian StylePark, Jaeyoung, and Young Uk Yim. 2020. "Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411" Micromachines 11, no. 1: 11. https://doi.org/10.3390/mi11010011
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