High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction
Abstract
:1. Introduction
2. Materials and Methods
2.1. Materials and Chemicals
2.2. Preparation of Nanoporous GaN
2.3. Device Fabrication
2.4. Characterization
3. Results
3.1. Microstructures of the Nanoporous GaN and CoPc/Porous-GaN Film
3.2. Optical Properties of the Nanoporous GaN and CoPc/Porous-GaN Film
3.3. Device Characterization
3.4. Sensing Mechanism
3.5. Performance Enhancement Mechanism
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Conflicts of Interest
References
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Materials | Light Source | Switch Ratio | Responsivity (mA/W) | Detectivity (Jones) | Reference |
---|---|---|---|---|---|
GaN/Si- nanoporous pillar array | 305 nm | ~104 | 29.4 | - | [10] |
MoS2/GaN | 265 nm | ~105 | 187 | 2.34 × 1013 | [11] |
Ga2O3/GaN | 365 nm | 152 | 54.49 | 1.23 × 1011 | [53] |
n-GZO NRs/porous-GaN | 365 nm | ~105 | 230 | 2.32 × 1012 | [54] |
CH3NH3PbI3/GaN | 365 nm | 5000 | 198 | 7.96 × 1012 | [38] |
CoPc/porous-GaN | 365 nm | ~105 | 588 | 4.8 × 1012 | This work |
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Xiao, Y.; Liu, L.; Ma, Z.-H.; Meng, B.; Qin, S.-J.; Pan, G.-B. High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction. Nanomaterials 2019, 9, 1198. https://doi.org/10.3390/nano9091198
Xiao Y, Liu L, Ma Z-H, Meng B, Qin S-J, Pan G-B. High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction. Nanomaterials. 2019; 9(9):1198. https://doi.org/10.3390/nano9091198
Chicago/Turabian StyleXiao, Yan, Lin Liu, Zhi-Hao Ma, Bo Meng, Su-Jie Qin, and Ge-Bo Pan. 2019. "High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction" Nanomaterials 9, no. 9: 1198. https://doi.org/10.3390/nano9091198