InAlGaN/GaN HEMTs at Cryogenic Temperatures
Abstract
:1. Introduction
2. Device Fabrication
3. Results
DC and RF Characteristics at RT and 77K
4. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Substrate | Electron Mobility (cm2·V−1·s−1) | Sheet Carrier Density (cm−2) | Sheet Resistance (Ω/□) |
---|---|---|---|
Sapphire | 1060 | 1.74 × 1013 | 340 |
SiC | 1800 | 1.93 × 1013 | 191 |
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Dogmus, E.; Kabouche, R.; Lepilliet, S.; Linge, A.; Zegaoui, M.; Ben-Ammar, H.; Chauvat, M.-P.; Ruterana, P.; Gamarra, P.; Lacam, C.; et al. InAlGaN/GaN HEMTs at Cryogenic Temperatures. Electronics 2016, 5, 31. https://doi.org/10.3390/electronics5020031
Dogmus E, Kabouche R, Lepilliet S, Linge A, Zegaoui M, Ben-Ammar H, Chauvat M-P, Ruterana P, Gamarra P, Lacam C, et al. InAlGaN/GaN HEMTs at Cryogenic Temperatures. Electronics. 2016; 5(2):31. https://doi.org/10.3390/electronics5020031
Chicago/Turabian StyleDogmus, Ezgi, Riad Kabouche, Sylvie Lepilliet, Astrid Linge, Malek Zegaoui, Hichem Ben-Ammar, Marie-Pierre Chauvat, Pierre Ruterana, Piero Gamarra, Cédric Lacam, and et al. 2016. "InAlGaN/GaN HEMTs at Cryogenic Temperatures" Electronics 5, no. 2: 31. https://doi.org/10.3390/electronics5020031