Research

2386 KiB

Open AccessArticle

Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

by Ronald A. Coutu, Robert A. Lake, Bradley D. Christiansen, Eric R. Heller, Christopher A. Bozada, Brian S. Poling, Glen D. Via, James P. Theimer, Stephen E. Tetlak, Ramakrishna Vetury and Jeffrey B. Shealy

Electronics 2016, 5(3), 32; https://doi.org/10.3390/electronics5030032 - 23 Jun 2016

Cited by 11 | Viewed by 5141

Abstract

The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating [...] Read more.

The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation) is insufficient to assess lifetime at operating conditions. Full article

(This article belongs to the Special Issue Gallium Nitride Electronics)

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867 KiB

Open AccessArticle

InAlGaN/GaN HEMTs at Cryogenic Temperatures

by Ezgi Dogmus, Riad Kabouche, Sylvie Lepilliet, Astrid Linge, Malek Zegaoui, Hichem Ben-Ammar, Marie-Pierre Chauvat, Pierre Ruterana, Piero Gamarra, Cédric Lacam, Maurice Tordjman and Farid Medjdoub

Electronics 2016, 5(2), 31; https://doi.org/10.3390/electronics5020031 - 22 Jun 2016

Cited by 18 | Viewed by 7346

Abstract

We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm²·V⁻¹·s⁻¹ combined with a sheet carrier [...] Read more.

We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm²·V⁻¹·s⁻¹ combined with a sheet carrier density of 1.93 × 10¹³ cm⁻² leading to a remarkably low sheet resistance of 44 Ω/□ are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (f_T/f_max) of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 μm technology confirmed the outstanding 2DEG properties. Full article

(This article belongs to the Special Issue Gallium Nitride Electronics)

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1672 KiB

Open AccessArticle

An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

by An-Jye Tzou, Dan-Hua Hsieh, Szu-Hung Chen, Yu-Kuang Liao, Zhen-Yu Li, Chun-Yen Chang and Hao-Chung Kuo

Electronics 2016, 5(2), 28; https://doi.org/10.3390/electronics5020028 - 02 Jun 2016

Cited by 22 | Viewed by 8922

Abstract

This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to [...] Read more.

This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed I_D under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications. Full article

(This article belongs to the Special Issue Gallium Nitride Electronics)

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1059 KiB

Open AccessArticle

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

by Roberto Quaglia, Vittorio Camarchia, Marco Pirola and Giovanni Ghione

Electronics 2016, 5(2), 25; https://doi.org/10.3390/electronics5020025 - 01 Jun 2016

Cited by 7 | Viewed by 5767

Abstract

Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power [...] Read more.

Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power amplifiers realized on 0.25

μ

m Gallium Nitride on Silicon Carbide monolithic integrated circuits for microwave backhaul applications: two combined power amplifiers working in the backhaul band around 7 GHz, and a more challenging third one working in the higher 15 GHz band. Architectures and main design steps are described, highlighting the pros and cons of Gallium Nitride with respect to the reference technology which, for these applications, is represented by gallium arsenide. Full article

(This article belongs to the Special Issue Gallium Nitride Electronics)

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1808 KiB

Open AccessArticle

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

by Martin Florovič, Jaroslava Škriniarová, Jaroslav Kováč and Peter Kordoš

Electronics 2016, 5(2), 20; https://doi.org/10.3390/electronics5020020 - 10 May 2016

Cited by 4 | Viewed by 5287

Abstract

Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150 °C. Obtained data [...] Read more.

Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150 °C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data was achieved. The activation energy of dominant traps in the investigated structures was found to be within 0.77–0.83 eV. This nearly identical activation energy was obtained from current transients measured at a reverse bias of −6 V as well as at a forward bias of+1 V. It indicates that the dominant traps might be attributed to defects mainly associated with dislocations connected predominantly with the GaN buffer near the AlGaN/GaN interface. Full article

(This article belongs to the Special Issue Gallium Nitride Electronics)

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2085 KiB

Open AccessArticle

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

by Michitaka Yoshino, Fumimasa Horikiri, Hiroshi Ohta, Yasuhiro Yamamoto, Tomoyoshi Mishima and Tohru Nakamura

Electronics 2016, 5(2), 15; https://doi.org/10.3390/electronics5020015 - 31 Mar 2016

Cited by 17 | Viewed by 5918

Abstract

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction [...] Read more.

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/cm (SiO₂ (k = 3.9)). The diodes were fabricated using the high-k mixed oxide of SiO₂ and CeO₂ with k = 12.3. I–V characteristics of the diode with a field plate showed a breakdown voltage above 2 kV with an increased avalanche resistance. This means that the electric field reduces at the periphery of the mesa-etched p-n junction and is uniformly formed across the whole p-n junction. It is clear that high-k dielectric film passivation and filed plate termination are essential techniques for GaN power devices. Full article

(This article belongs to the Special Issue Gallium Nitride Electronics)

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2288 KiB

Open AccessArticle

Gate Stability of GaN-Based HEMTs with P-Type Gate

by Matteo Meneghini, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso and Enrico Zanoni

Electronics 2016, 5(2), 14; https://doi.org/10.3390/electronics5020014 - 25 Mar 2016

Cited by 33 | Viewed by 7910

Abstract

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of [...] Read more.

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress experiment, the devices show a stable behavior up to V_GS = 10 V, and a catastrophic failure happened for higher voltages; (iii) failure consists in the creation of shunt paths under the gate, of which the position can be identified by electroluminescence (EL) measurements; (iv) the EL spectra emitted by the devices consists of a broad emission band, centered around 500–550 nm, related to the yellow-luminescence of GaN; and (v) when submitted to a constant voltage stress tests, the p-GaN gate can show a time-dependent failure, and the time to failure follows a Weibull distribution. Full article

(This article belongs to the Special Issue Gallium Nitride Electronics)

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477 KiB

Open AccessArticle

Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

by Sofiane Belahsene, Noor Alhuda Al Saqri, Dler Jameel, Abdelmadjid Mesli, Anthony Martinez, Jacques De Sanoit, Abdallah Ougazzaden, Jean Paul Salvestrini, Abderrahim Ramdane and Mohamed Henini

Electronics 2015, 4(4), 1090-1100; https://doi.org/10.3390/electronics4041090 - 04 Dec 2015

Cited by 10 | Viewed by 6866

Abstract

The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps [...] Read more.

The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 10¹⁴ to 3.6 × 10¹⁵ cm⁻³, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 10¹⁴ cm⁻³. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction. Full article

(This article belongs to the Special Issue Gallium Nitride Electronics)

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