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Journal: Electronics, 2018
Volume: 7
Number: 210

Article: DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs
Authors: by Raúl Rodríguez, Benito González, Javier García, Gaetan Toulon, Frédéric Morancho and Antonio Núñez
Link: https://www.mdpi.com/2079-9292/7/10/210

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