Selected Papers from NEXTGEN’19: Next Generation High-Efficiency

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Energy Science and Technology".

Deadline for manuscript submissions: closed (20 December 2019) | Viewed by 2552

Special Issue Editors


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Guest Editor
1. Group of Solar Energy Materials and Systems, Catalonia Institute for Energy Research (IREC), 08930 Barcelona, Spain
2. Department of Electronics, University of Barcelona, Barcelona, Spain
Interests: thin film photovoltaic technologies; chalcogenide based solar cells; advanced device concepts for very high efficiency photovoltai+cs; new concepts in Si technology; emerging photovoltaic technologies; perovskites; organic solar cells; BIPV and BAPV concepts
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Guest Editor
IREC (Catalonia Insitute for Energy Reseearch) & University of Barcelona

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Co-Guest Editor
Aix-Marseille Université
Interests: materials; photonics; optics; photovoltaics and optoelectronics

Special Issue Information

This Special Issue will include selected contributions from the NEXTGEN’19 Next Generation High-Efficiency Photovoltaics International School and Workshop that will be held in Palma (Mallorca, Spain) on 1–4 October 2019. The workshop will review and highlight the latest developments in materials and device concepts for cost-efficient photovoltaic technologies and the challenges related to their successful industrial implementation.

Specific topics in this Special Issue will include new concepts and industrial perspectives in Si technology, advanced device concepts for very high efficiencies, thinfilm chalcogenides, emerging perovskites and organic technologies, innovative  characterization methodologies, and advanced PV integration applications.

Prof. Dr. Alejandro Pérez-Rodróhiez
Dr. Edgardo Saucedo
Guest Editors

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Keywords

  • advanced photovoltaic technologies
  • solar cells
  • materials and devices for cost-efficient PV
  • emerging photovoltaic technologies
  • Si solar cells
  • thin-film photovoltaics
  • perovskite solar cells
  • organic solar cells

Published Papers (1 paper)

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Research

11 pages, 3001 KiB  
Article
Influence of Substrate Temperature during InxSy Sputtering on Cu(In,Ga)Se2/Buffer Interface Properties and Solar Cell Performance
by Dimitrios Hariskos, Wolfram Hempel, Richard Menner and Wolfram Witte
Appl. Sci. 2020, 10(3), 1052; https://doi.org/10.3390/app10031052 - 05 Feb 2020
Cited by 11 | Viewed by 2240
Abstract
Indium sulfide (InxSy)—besides CdS and Zn(O,S)—is already used as a buffer layer in chalcopyrite-type thin-film solar cells and modules. We discuss the influence of the substrate temperature during very fast magnetron sputtering of InxSy buffer layers [...] Read more.
Indium sulfide (InxSy)—besides CdS and Zn(O,S)—is already used as a buffer layer in chalcopyrite-type thin-film solar cells and modules. We discuss the influence of the substrate temperature during very fast magnetron sputtering of InxSy buffer layers on the interface formation and the performance of Cu(In,Ga)Se2 solar cells. The substrate temperature was increased from room temperature up to 240 °C, and the highest power conversion efficiencies were obtained at a temperature plateau around 200 °C, with the best values around 15.3%. Industrially relevant in-line co-evaporated polycrystalline Cu(In,Ga)Se2 absorber layers were used, which yield solar cell efficiencies of up to 17.1% in combination with a solution-grown CdS buffer. The chemical composition of the InxSy buffer as well as of the Cu(In,Ga)Se2/InxSy interface was analyzed by time-of-flight secondary ion mass spectrometry. Changes from homogenous and stoichiometric In2S3 layers deposited at RT to inhomogenous and more sulfur-rich and indium-deficient compositions for higher temperatures were observed. This finding is accompanied with a pronounced copper depletion at the Cu(In,Ga)Se2 absorber surface, and a sodium accumulation in the InxSy buffer and at the absorber/buffer interface. These last two features seem to be the origin for achieving the highest conversion efficiencies at substrate temperatures around 200 °C. Full article
(This article belongs to the Special Issue Selected Papers from NEXTGEN’19: Next Generation High-Efficiency)
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