Optical Properties of Novel Semiconductor Nanostructures

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Optics and Lasers".

Deadline for manuscript submissions: closed (31 May 2020) | Viewed by 3025

Special Issue Editors


E-Mail Website
Guest Editor
1. Department of Physics, Centre of Physics and LABMET, University of Minho, 4710-057 Braga, Portugal
2. International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
Interests: theory and modelling of optical properties of low-dimensional semiconductors; graphene and plasmonic nanoparticles
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA
Interests: structure and electronic properties of materials; low-dimensional systems and electronic correlations
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
Department of Physics, University of Havana, Havana, Cuba and Centro Latino-Americano de Física, Rio de Janeiro, Brazil
Interests: phonons; electron–phonon interaction; Raman scattering; excitons and exciton-polaritons in semiconductor nanostructures

E-Mail Website
Guest Editor
Department of Theoretical Physics, Lobachevsky State University of Nizhny Novgorod, 603950 Gagarin avenue 23, Nizhny Novgorod, Russia
Interests: theory of electronic and optical properties and spin-related phenomena in semiconductor nanostructures and bulk materials; energy transfer in nanocrystal ensembles

Special Issue Information

Dear Colleagues,

For nearly 50 years, the effects of reduced dimensions on the optical properties of semiconductor crystals have been the focus of intense experimental and theoretical research. Beginning with impressive results from optical studies of quantum wells and superlattices in the 1970s, the effects of the quantum confinement of electrons and holes on the light emission and absorption of systems have been demonstrated for quantum dots, in self-assembled in epitaxially-grown heterostructures as well as nanocrystals synthesized in colloidal solutions. These structures have yielded a variety of applications, ranging from lasers to color displays to luminescent markers of biomolecules.

The beginning of this century brought graphene with its unique optical properties, partially arising from its intrinsic two-dimensional (2D) nature. Perhaps the most interesting (and less-explored so far) spectral ranges in terahertz (THz) and mid-IR, where plasmon-polaritons are supported in graphene, represent an intriguing subject of fundamental research with many promising applications. The graphene boom also gave rise to intense studies of other layered materials, including the family of transition metal dichalcogenides. These materials include semiconductors with band gaps in the visible range and extraordinary electronic properties, such as large exciton binding energy, well-defined Berry curvature, and strong spin-valley locking effects. Colloidal chemistry methods have also brought about novel nanoplatelet semiconductor structures, with 2D character and well-controlled photoluminescent properties.

At the same time, a considerable number of research groups around the world continue efforts to combine photonic structures with silicon electronics. Several important results have been obtained in recent years, including light emission from reduced-dimension silicon materials and silicon-compatible group IV semiconductor alloys such as Ge-Sn. Many interesting properties have also been shown in hybrid materials combining conventional or 2D semiconductors with organic emitters (dye molecules) or inorganic nanoparticles, with enhanced light absorption in specific spectral regions or optical sensing of bio- and gas molecules.

A fascinating new area of unravelling topological effects on the optical response of materials is also arising, with prominent dichroism, polarization memory, as well as interesting magneto-optical response in topological insulators and other Dirac materials. This area has recently focused on the identification and control of single-photon emitters via nanostructured substrates for a variety of 2D materials.

This Special Issue aims to gather original research articles and review papers describing experimental and theoretical results concerning the optical properties of materials where quantum confinement or reduced dimensionality play a key role. It is open to contributions covering a broad spectral range from THz to ultraviolet, investigating fundamental aspects of light–matter interactions or targeting specific applications.

Prof. Mikhail I. Vasilevskiy
Prof. Sergio E. Ulloa
Prof. Carlos Trallero Giner
Prof. Vladimir Burdov
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • colloidal quantum dots and core/shell structures
  • nanowires
  • nanoplatelets
  • silicon nanostructures for optoelectronics
  • Group IV materials for optoelectronics
  • strain and optical response
  • semiconductor 2D materials
  • graphene
  • nanoplasmonics
  • low gap materials
  • hybrid nanomaterials
  • quantum and single-photon emitters
  • semiconductor microcavities
  • polaritons
  • hyperbolic materials
  • non-linear optical properties
  • Van der Waals heterostructures
  • topological insulators

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

10 pages, 1547 KiB  
Article
Width Dependent Two-Photon Absorption in Monolayer Black Phosphorus Nanoribbons
by Yu Liu, Xiaobo Feng, Yonggang Qin and Qianjin Wang
Appl. Sci. 2019, 9(10), 2014; https://doi.org/10.3390/app9102014 - 16 May 2019
Cited by 8 | Viewed by 2602
Abstract
Black phosphorus nanoribbons (BPNs) might offer alternatives to narrow-gap compound semiconductors for tunable optoelectronics in infrared region. In this work we present a quantum perturbation theory on two-photon absorption (TPA) in monolayer armchair-edged black phosphorus nanoribbons (acBPNs) employing the reduced two-band model within [...] Read more.
Black phosphorus nanoribbons (BPNs) might offer alternatives to narrow-gap compound semiconductors for tunable optoelectronics in infrared region. In this work we present a quantum perturbation theory on two-photon absorption (TPA) in monolayer armchair-edged black phosphorus nanoribbons (acBPNs) employing the reduced two-band model within the long-wavelength BP Hamiltonian. The matrix elements for one-photon transition have been derived and the TPA spectrum associate with intra conduction band transition and inter band transition have been drawn. The calculations predict that the TPA coefficient in acBPNs is in the magnitude of 10−6 m/W in visible region, which is 4 orders higher than the conventional semiconductor quantum dots. And in infrared region, there is a giant TPA coefficient, which is mainly contributed from intra band transitions and can reach up to10−1 m/W. The TPA peaks can be tuned both by the width of BPNs and the electron relaxation energy. Full article
(This article belongs to the Special Issue Optical Properties of Novel Semiconductor Nanostructures)
Show Figures

Figure 1

Back to TopTop