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Applied Sciences
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Graphene and Graphene-Based Composites for Electronics
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Graphene and Graphene-Based Composites for Electronics

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Nanotechnology and Applied Nanosciences".

Deadline for manuscript submissions: closed (30 May 2020) | Viewed by 20743

Special Issue Editors

Dr. Bernard Plaçais

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Guest Editor
Ecole Normale Supérieure de Paris | ENS Département de Physique
Interests: condensed matter physics; quantum physics and experimental physics
Dr. Emiliano Pallecchi

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Guest Editor
Institute of Electronics, Microelectronics and Nanotechnology, (IEMN) CNRS UMR8520, Villeneuve d'Ascq, CEDEX, France
Interests: nanoelectronics; microwave engineering; bioengineering; mesoscopic physics; printed electronics; graphene devices; two-dimensional materials; hybrid transport

Special Issue Information

Dear Colleagues,

In recent years, the potential of graphene and graphene-based composites has driven an intense research effort. Graphene is expected to play an important role in electronics for telecommunications, radio-frequency, automobile and air transport. As a result, significant steps forwards have been achieved. The operational frequencies of graphene transistors are exceeding 200 GHz, graphene diodes, ambipolar mixers, oscillators, graphene hot electron and Klein-tunneling transistors have been demonstrated.  Graphene has been heterogeneously integrated with conventional CMOS technology, and flexible integrated circuits based on graphene have been realized. Graphene composites are promising as flexible, thermally conductive, lightweight materials for shielding, packaging and smart interposers. The combination of graphene and other 2D materials has further expanded the functionality of graphene-based devices.

Despite these achievements, important challenges remains in the fabrication and the understanding the mechanisms at play in graphene based electronics devices.

The aim of this Special Issue is to attract leading contributions in the area in an effort to highlight the latest exciting developments in graphene and graphene composite to promote concrete electronics applications. Accepted contributions will include the design, the electrical characterization, the modeling, the development of fabrication processes of graphene and graphene based composites for future electronics.

Dr. Bernard Plaçais
Dr. Emiliano Pallecchi
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Graphene Devices
  • Nanoelectronics
  • Composites
  • Packaging
  • Flexible Electronics
  • High Frequency Electronics
  • Optoelectronics
  • Modeling
  • Fabrication
  • Integration

Published Papers (5 papers)

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Research

8 pages, 1394 KiB  
Communication
A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
by Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C. Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy and Sebastien Fregonese
Appl. Sci. 2020, 10(6), 2183; https://doi.org/10.3390/app10062183 - 23 Mar 2020
Cited by 5 | Viewed by 3356
Abstract
This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide [...] Read more.
This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor. Full article
(This article belongs to the Special Issue Graphene and Graphene-Based Composites for Electronics)
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12 pages, 1850 KiB  
Article
High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation
by Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, Jose Palomo, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, Jean-Marc Berroir, Erwann Bocquillon, Gwendal Fève, Emiliano Pallecchi and Bernard Plaçais
Appl. Sci. 2020, 10(2), 446; https://doi.org/10.3390/app10020446 - 8 Jan 2020
Cited by 19 | Viewed by 5104
Abstract
The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze [...] Read more.
The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20   GHz . We discuss the intrinsic 0.1   THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection. Full article
(This article belongs to the Special Issue Graphene and Graphene-Based Composites for Electronics)
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8 pages, 1761 KiB  
Communication
Preparation of Few-Layer Graphene Dispersions from Hydrothermally Expanded Graphite
by Cristian Vacacela Gomez, Talia Tene, Marco Guevara, Gabriela Tubon Usca, Dennys Colcha, Hannibal Brito, Raul Molina, Stefano Bellucci and Adalgisa Tavolaro
Appl. Sci. 2019, 9(12), 2539; https://doi.org/10.3390/app9122539 - 21 Jun 2019
Cited by 32 | Viewed by 5521
Abstract
In this study, we propose a novel approach to prepare few-layer graphene (FLG) dispersions, which is realized by exfoliating natural graphite flakes in a surfactant aqueous solution under hydrothermal treatment and liquid-phase exfoliation. In order to obtain stable and well-dispersed FLG dispersions, pristine [...] Read more.
In this study, we propose a novel approach to prepare few-layer graphene (FLG) dispersions, which is realized by exfoliating natural graphite flakes in a surfactant aqueous solution under hydrothermal treatment and liquid-phase exfoliation. In order to obtain stable and well-dispersed FLG dispersions, pristine graphite is hydrothermally expanded in a hexadecyltrimethylammonium bromide (CTAB) aqueous solution at 180 °C for 15 h, followed by sonication up to 3 h. In comparison to long-time sonication methods, the present method is significantly efficient, and most importantly, does not involve the use of an oxidizing agent and hazardous media, which will make it more competent in the scalable production of graphene. Full article
(This article belongs to the Special Issue Graphene and Graphene-Based Composites for Electronics)
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9 pages, 1283 KiB  
Article
Nonlinear Refractive Index in Rectangular Graphene Quantum Dots
by Yonggang Qin, Xiaobo Feng and Yu Liu
Appl. Sci. 2019, 9(2), 325; https://doi.org/10.3390/app9020325 - 17 Jan 2019
Cited by 7 | Viewed by 3202
Abstract
Alongside its other favorable properties, the large refraction nonlinearity of graphene-related material makes it ideal for use in optoelectronics applications. Numerous experimental studies about nonlinear optical refraction have been conducted, but theoretical verification is lacking. In this paper the nonlinear refractive index for [...] Read more.
Alongside its other favorable properties, the large refraction nonlinearity of graphene-related material makes it ideal for use in optoelectronics applications. Numerous experimental studies about nonlinear optical refraction have been conducted, but theoretical verification is lacking. In this paper the nonlinear refractive index for rectangular graphene quantum dots (RGQDs) was calculated using the relationship between nonlinear refractive index and the third-order nonlinear optical susceptibility. The third-order nonlinear optical susceptibility for third harmonic generation was derived employing the electronic states obtained from the Dirac equation around K point in RGQDs under hard wall boundary conditions. Results revealed that the calculated nonlinear refractive index, n 2 , was in the magnitude of 10−14 m2/W in the visible region, which is nearly five orders larger than conventional semiconductor quantum dots, while in the infrared region the nonlinear refractive index reached up to the magnitude of 10−11 m2/W for M = 3M0 sized RGQDs where the resonance enhancement occurred. The nonlinear refractive index could be tuned both by the edges and sizes. Full article
(This article belongs to the Special Issue Graphene and Graphene-Based Composites for Electronics)
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Graphical abstract

10 pages, 4272 KiB  
Article
Electrical Manipulation of Electromagnetically Induced Transparency for Slow Light Purpose Based on Metal-Graphene Hybrid Metamaterial
by Chenxi Liu, Song Zha, Peiguo Liu, Cheng Yang and Qihui Zhou
Appl. Sci. 2018, 8(12), 2672; https://doi.org/10.3390/app8122672 - 18 Dec 2018
Cited by 13 | Viewed by 2382
Abstract
A terahertz metamaterial is presented and numerically investigated to achieve tunable electromagnetically induced transparency (EIT) for slow light. The unit cell consists of cut-wire pairs and U-shaped ring resonators with graphene strips placed between the metal film and the SiO2/Si substrate. [...] Read more.
A terahertz metamaterial is presented and numerically investigated to achieve tunable electromagnetically induced transparency (EIT) for slow light. The unit cell consists of cut-wire pairs and U-shaped ring resonators with graphene strips placed between the metal film and the SiO2/Si substrate. Through bright-dark mode coupling, the radiative resonance induced by the U-shaped ring is suppressed, and then the typical EIT effect is realized. The transparency window and the accompanied group delay can be electrically manipulated with different Fermi energy of the graphene. By analyzing the surface distribution, the underlying tuning mechanism of this hybrid metamaterial is investigated in detail. Moreover, the transparency peak decreases slightly with the increasing strip width of the graphene layer but completely vanishes as the strip width exceeds the length of the covered U-shaped ring. The influence of the critical index of graphene quality, i.e., carrier mobility on the EIT effect, is considered. The results of this study may provide valuable guidance in designing and analyzing tunable EIT structures based on a metal-graphene hybrid structure for slow light purposes. Full article
(This article belongs to the Special Issue Graphene and Graphene-Based Composites for Electronics)
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