Characterization and Applications of Semiconductor-Based Thin Films

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 2854

Special Issue Editor


E-Mail Website
Guest Editor
Department of Material Science, Ruđer Bošković Institute, Zagreb, Croatia
Interests: thin films; quantum dots; self-assembly; germanium; GISAXS; magnetron sputtering deposition
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We cordially invite you to submit your research work to our Special Issue “Deposition, Characterization and Applications of Semiconductor-Based Thin Films”. Semiconductor-based thin films are a broad class of materials that play a very important role in fundamental science and applications in modern nanotechnology. Semiconductor thin films, especially nanostructured films, usually show strong carrier confinement effects that strongly depend on their structure. Therefore, specific preparation and deposition methods that enable the precise control and determination of the materials’ structure and their other properties are very important.  Such materials attract a great deal of attention due to their huge applicability. Practically all modern nanotechnology devices today use some type of thin film. Therefore, all investigations related to the application of semiconductor-based thin films in all fields are desired.

The aim of this Special Issue is to present the latest theoretical and experimental research related to the preparation, characterization, and application of semiconductor-based thin films. Both research papers and review articles are invited.

In particular, the topics of interest include, but are not limited to:

  • Preparation and structural properties of novel semiconductor-based thin films;
  • New characterization techniques of thin films;
  • Opto-electrical properties and devices prepared using semiconductor-based thin films;
  • Applications of semiconductor thin films.

Dr. Maja Mičetić
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

9 pages, 1652 KiB  
Article
G-Doping-Based Metal-Semiconductor Junction
by Avtandil Tavkhelidze, Larissa Jangidze, Zaza Taliashvili and Nima E. Gorji
Coatings 2021, 11(8), 945; https://doi.org/10.3390/coatings11080945 - 7 Aug 2021
Cited by 7 | Viewed by 2480
Abstract
Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction has been fabricated and demonstrated with extremely low forward voltage and reduced reverse current. The formation mechanism of p-p(v) junction has been proposed. To obtain G-doping, the surfaces of p-type [...] Read more.
Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction has been fabricated and demonstrated with extremely low forward voltage and reduced reverse current. The formation mechanism of p-p(v) junction has been proposed. To obtain G-doping, the surfaces of p-type and p+-type silicon substrates were patterned with nanograting indents of depth d = 30 nm. The Ti/Ag contacts were deposited on top of G-doped layers to form metal-semiconductor junctions. The two-probe method has been used to record the I–V characteristics and the four-probe method has been deployed to exclude the contribution of metal-semiconductor interface. The collected data show a considerably lower reverse current in p-type substrates with nanograting pattern. In the case of p+-type substrate, nanograting reduced the reverse current dramatically (by 1–2 orders of magnitude). However, the forward currents are not affected in both substrates. We explained these unusual I–V characteristics with G-doping theory and p-p(v) junction formation mechanism. The decrease of reverse current is explained by the drop of carrier generation rate which resulted from reduced density of quantum states within the G-doped region. Analysis of energy-band diagrams suggested that the magnitude of reverse current reduction depends on the relationship between G-doping depth and depletion width. Full article
(This article belongs to the Special Issue Characterization and Applications of Semiconductor-Based Thin Films)
Show Figures

Figure 1

Back to TopTop