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Crystals
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Epitaxial Growth of Crystalline Semiconductors
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Epitaxial Growth of Crystalline Semiconductors

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (31 August 2023) | Viewed by 4351

Special Issue Editor

Dr. Tao Tao

E-Mail Website
Guest Editor
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Interests: III-nitride semiconductors; optoelectronic devices; nanolaser; micro-LED

Special Issue Information

Dear Colleagues,

Currently, society has come into a digital age built by various kinds of semiconductor materials. Tremendous inventions and developments of semiconductors have been achieved. High-performance devices depend on high-quality epitaxial growth of crystalline semiconductor materials. For example, (silica-based) integrated circuit, (III-nitride-based) LEDs and laser diodes (LDs) and (2D semiconductor-related) novel devices have been established with the progress in epitaxial growth and device processing technologies.

To further improve the performance of semiconductor devices, advanced epitaxial growth and device processing technologies need to be explored. Developments and progress in epitaxial growth and processing techniques are laborious and time consuming. Therefore, those technologies are fundamental, vital and urgently needed, which should be encouraged and paid more attention to.

We would like to invite researchers to contribute to this Special Issue. The potential topics include, but are not limited to:

  • Wide bandgap semiconductors;
  • 2D semiconductor;
  • Perovskite material;
  • Silica-based material;
  • Epitaxial growth;
  • Semiconductor-related devices;
  • Material growth on novel substrates;
  • Material epitaxy and characterization.

Dr. Tao Tao
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide bandgap semiconductors
  • 2D semiconductor
  • perovskite material
  • silica-based material
  • epitaxial growth

Published Papers (3 papers)

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Research

9 pages, 9002 KiB  
Article
H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD
by Wenxiao Hu, Xinxin Yu, Tao Tao, Kai Chen, Yucong Ye, Jianjun Zhou, Zili Xie, Yu Yan, Bin Liu and Rong Zhang
Crystals 2023, 13(8), 1221; https://doi.org/10.3390/cryst13081221 - 8 Aug 2023
Viewed by 1092
Abstract
Diamond-based transistors have been considered as one of the best choices due to the numerous advantages of diamond. However, difficulty in the growth and fabrication of diamond needs to be addressed. In this paper, high quality diamond film with an atomically flat surface [...] Read more.
Diamond-based transistors have been considered as one of the best choices due to the numerous advantages of diamond. However, difficulty in the growth and fabrication of diamond needs to be addressed. In this paper, high quality diamond film with an atomically flat surface was grown by microwave plasma chemical vapor deposition. High growth rate, as much as 7 μm/h, has been acquired without nitrogen doping, and the root mean square (RMS) of the surface roughness was reduced from 0.92 nm to 0.18 nm by using a pre-etched process. H-terminated diamond MOSFETs were fabricated on a high-quality epitaxial diamond layer, of which the saturated current density was enhanced. The hysteresis of the transfer curve and the shift of the threshold voltage were significantly reduced as well. Full article
(This article belongs to the Special Issue Epitaxial Growth of Crystalline Semiconductors)
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11 pages, 3234 KiB  
Article
Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film
by Jianguo Zhao, Boyan Suo, Ru Xu, Tao Tao, Zhe Zhuang, Bin Liu, Xiong Zhang and Jianhua Chang
Crystals 2023, 13(7), 1145; https://doi.org/10.3390/cryst13071145 - 22 Jul 2023
Cited by 1 | Viewed by 1034
Abstract
Nonpolar (112¯0) a-plane GaN films were grown on semipolar (11¯02) r-plane sapphire substrates using various buffer layers within a low-pressure metal organic chemical vapor deposition system. The structural properties of nonpolar a-plane GaN films [...] Read more.
Nonpolar (112¯0) a-plane GaN films were grown on semipolar (11¯02) r-plane sapphire substrates using various buffer layers within a low-pressure metal organic chemical vapor deposition system. The structural properties of nonpolar a-plane GaN films were intensively investigated by X-ray diffraction and Raman spectra measurements. A set of buffer layers were adopted from a GaN layer to a composite layer containing a multiple AlN layers and a gradually varied-Al-content AlGaN layer, the full width at half maximum of the X-ray rocking curves measured along the [0001] and [101¯0] directions of a-plane GaN were reduced by 35% and 37%, respectively. It was also found that the basal-plane stacking faults (BSFs) density can be effectively reduced by the heterogeneous interface introduced together with the composite buffer layer. An order of magnitude reduction in BSFs density, as low as 2.95 × 104 cm−1, and a pit-free surface morphology were achieved for the a-plane GaN film grown with the composite buffer layer, which is promising for the development of nonpolar GaN-based devices in the future. Full article
(This article belongs to the Special Issue Epitaxial Growth of Crystalline Semiconductors)
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10 pages, 3168 KiB  
Article
High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth
by Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Hongwei Gao, Meixin Feng, Yu Zhou and Hui Yang
Crystals 2023, 13(3), 454; https://doi.org/10.3390/cryst13030454 - 5 Mar 2023
Cited by 4 | Viewed by 1884
Abstract
We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN on stripe-patterned Si(111) substrates with various trench widths. By narrowing down the trench and ridge widths of patterned Si substrates, crack-free, 6-micrometer-thick, high-quality AlN films on Si substrates were produced. The full-width-at-half-maximum [...] Read more.
We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN on stripe-patterned Si(111) substrates with various trench widths. By narrowing down the trench and ridge widths of patterned Si substrates, crack-free, 6-micrometer-thick, high-quality AlN films on Si substrates were produced. The full-width-at-half-maximum values of the X-ray-diffraction rocking curves for the AlN (0002) and (101¯2) planes were as low as 260 and 374 arcsec, respectively, corresponding to a record low dislocation density of 1.3 × 109 cm−2. Through the combination of a micro-Raman study and the X-ray diffraction analysis, it was found that narrowing the stripe width from 5 μm to 3 μm can reduce the vertical growth thickness before coalescence, resulting in a large decrease in the internal tensile stress and tilt angle, and, therefore, better suppression in the cracks and dislocations of the ELO–AlN. This work paves the way for the fabrication of high-performance Al(Ga)N-based thin-film devices such as ultraviolet light-emitting diodes and AlN bulk acoustic resonators grown on Si. Full article
(This article belongs to the Special Issue Epitaxial Growth of Crystalline Semiconductors)
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