Epitaxial Growth of Semiconductor Nanostructures

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: closed (30 September 2017)

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School of Electrical & Electronic Engineering, Nanyang Technological University, Block S2, S2-B2c-87, 50 Nanyang Avenue, Singapore, Singapore
Interests: MOVPE epitaxy growths of compound semiconductors and semiconductor nanostructures; optoelectronic devices; semiconductor lasers and applications
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Dear Colleagues,

Semiconductor nanostructures, semiconductors with one dimension (quantum wells), two dimensions (nanowires), or three dimensions (quantum dots), shrink to smaller than 100 nm in size, show peculiar and fascinating properties, and have applications that are superior to their bulk counterparts. Since the successful development of quantum well (semiconductor 2D nanostructure) lasers in the 1970s, one of the richest areas of applications of semiconductor nanostructures has been the area of optoelectronic devices.

Currently, semiconductor nanostructures and technologies are advancing at a rapid pace, and are making revolutionary contributions in many fields, including optoelectronics, photonics, electronics, and materials science.

Semiconductor nanostructures have been enabled by advancements in epitaxial growth techniques, which are now capable of growing epilayers as thin as one atomic layer in thickness and with roughness that are a mere fraction of a monolayer. The development of advanced growth technologies, capable of realizing high crystalline quality, high purity, and a perfect interface of semiconductor nanostructures, is an enabling step in bringing semiconductor nano devices to reality.

It is my pleasure to invite you to submit a manuscript for this Special Issue on “Epitaxial Growth of Semiconductor Nanostructures”. Full papers, communications, and reviews are all welcome.

Dr. Xiaohong Tang
Guest Editor

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Keywords

  • Epitaxy growth
  • Semiconductor nanostructure
  • III-V semiconductors, II-VI semiconductors
  • Oxides, superconductors, dielectrics
  • Optoelectronics, photovoltaic devices, high speed and high power electronic devices, spintronics

Published Papers (1 paper)

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Letter
Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure
by Liang Zhao, Zuoxing Guo, Xiangdong Ding, Jingjuan Li, Shen Yang, Min Zhang and Lei Zhao
Crystals 2017, 7(6), 155; https://doi.org/10.3390/cryst7060155 - 25 May 2017
Cited by 1 | Viewed by 3797
Abstract
In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer [...] Read more.
In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In0.82Ga0.18As/InP heterostructure. The epitaxial layers and buffer layers were grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. In this study, the surface morphology and microstructures of the heterostructure were investigated by SEM, AFM, XRD and TEM. The residual strains of the In0.82Ga0.18As epitaxial layer in different samples were studied by Raman spectroscopy. The residual strain of the In0.82Ga0.18As epitaxial layer was decreased by designing double buffer layers which included an InP layer; as a result, dislocations in the epitaxial layer were effectively suppressed since the dislocation density was notably reduced. Moreover, the performance of In0.82Ga0.18As films was investigated using the Hall test, and the results are in line with our expectations. By comparing different buffer layer structures, we explained the mechanism of dislocation density reduction by using double buffer layers, which included a thin InP layer. Full article
(This article belongs to the Special Issue Epitaxial Growth of Semiconductor Nanostructures)
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