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Electronics
Special Issues
Trends and Perspectives in Photodetectors
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Trends and Perspectives in Photodetectors

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: closed (20 December 2023) | Viewed by 3959

Special Issue Editors

Dr. Fulai Zhao

E-Mail Website
Guest Editor
School of Materials Science, Tianjin University, Tianjin 300350, China
Interests: 2D materials; electronic and optoelectronic devices; nanocomposites; polymer composites
Special Issues, Collections and Topics in MDPI journals
Dr. Fei Zhang

E-Mail Website
Guest Editor
Institute of Flexible Electronics Technology of THU, Jiaxing 314000, China
Interests: advanced carbon materials; flexible electronics; thermal conductivity composite materials; sensors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Photodetectors, which can convert incident light signals into electrical signals, are considered essential components in a variety of applications, from imaging sensors and memory to environmental detection, military surveillance, and remote temperature monitoring. Many organic, inorganic, or hybrid semiconductor materials have been investigated for building high-performance photodetectors for flexible, broad-band (from the visible to the infrared range), solar-blind deep ultraviolet sensing. These are realistic emerging candidates for next-generation optoelectronic devices and wireless transmission systems. These make photodetectors a realistic emerging candidate for next-generation optoelectronic devices and wireless transmission systems. With the developments in recent years, photoelectrochemical photodetectors with a low cost and self-powered properties have gradually become a research hotspot. These photodetectors are also competitive candidates in the field of flexible photodetectors. However, compared with traditional photoconductive photodetectors, photoelectrochemical photodetectors have a certain gap in detection performance.

We are pleased to invite you to contribute articles to illustrate the hotspots and trends in the field of photodetectors, and to point out the development direction of photodetectors. In this Special Issue, original research articles, reviews, short communications and letters are welcome. Research areas may include, but are not limited to, the following:

  • Functional nanomaterials for the fabrication of photodetectors
  • Novel materials for photoelectrochemical sensors
  • Mechanisms and applications of the wearable photodetectors
  • Simulation and computation for photodetector materials
  • Photodiodes, photoconductors, and phototransistors, etc.
  • New photoconductance effect analysis for neuromorphic computing, data storage, and memory logic hardware applications

We look forward to receiving your contributions.

Dr. Fulai Zhao
Dr. Fei Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photodetectors
  • photoelectrochemical sensors
  • wearable photodetectors
  • photodetector materials
  • photodiodes
  • phototransistors

Published Papers (2 papers)

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Research

22 pages, 9090 KiB  
Article
Classification of Optoelectronic Rotary Encoder Faults Based on Deep Learning Methods in Permanent Magnet Synchronous Motor Drive System
by Kamila Jankowska and Mateusz Dybkowski
Electronics 2023, 12(19), 4184; https://doi.org/10.3390/electronics12194184 - 9 Oct 2023
Cited by 2 | Viewed by 1401
Abstract
This article presents the classification of optoelectronics encoder faults in a permanent magnet synchronous motor (PMSM) drive system. This paper proposes the deep neural networks (DNNs) speed sensor faults classification application in the vector-controlled PMSM drive. This approach to the issue has not [...] Read more.
This article presents the classification of optoelectronics encoder faults in a permanent magnet synchronous motor (PMSM) drive system. This paper proposes the deep neural networks (DNNs) speed sensor faults classification application in the vector-controlled PMSM drive. This approach to the issue has not been discussed in the literature before. This work presents a solution based on early detection with the use of the model reference adaptive system (MRAS) estimator and fault classification based on artificial intelligence. The innovative nature of this work is also due to the simulation of speed sensor damage using the developed optoelectronics encoder model in the Matlab/Simulink environment. This work is focused on simulation studies, which have been supported by experimental results obtained on the MicroLabBox platform. This article compares two structures of deep neural networks in fault detection. The results were also compared with previous experimental studies on the classification of speed sensor failures using shallow neural networks. Full article
(This article belongs to the Special Issue Trends and Perspectives in Photodetectors)
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11 pages, 4406 KiB  
Communication
Sidewall Modification Process for Trench Silicon Power Devices
by Lei Jin, Zhuorui Tang, Long Chen, Guijiu Xie, Zhanglong Chen, Wei Wei, Jianghua Fan, Xiaoliang Gong and Ming Zhang
Electronics 2023, 12(11), 2385; https://doi.org/10.3390/electronics12112385 - 25 May 2023
Viewed by 2058
Abstract
In this study, trench sidewall modification processes were designed to improve profile uniformity and thereby enhance the electrical performance of silicon power devices in large-scale production. The effects of trench sidewall modification on the morphology, structure and electrical properties were studied. Plasma-induced damage [...] Read more.
In this study, trench sidewall modification processes were designed to improve profile uniformity and thereby enhance the electrical performance of silicon power devices in large-scale production. The effects of trench sidewall modification on the morphology, structure and electrical properties were studied. Plasma-induced damage in etching processes was also observed and briefly explained. Straight and smooth sidewall profiles were achieved through adjusting the SF6/CHF3 proportion in a combined etchant gas flow in the main etching procedure. By comparing HRSEM images from different etching protocols, it was evident that an enhanced CHF3 flow formed a proper passivation of the sidewall, eliminating the ion damages that are common in current main etch steps. To address the impurities introduced from the etchant gas and improve the gate oxide uniformity, further steps of depolymerization were applied in a plasma asher chamber, followed by wet clean steps. In the meantime, the plasma-induced charge accumulation effect was reduced by UV curing. Improved trench sidewall profiles and the gate oxide uniformity contributed to a lower leakage current between the gate and source terminals, leading to an overall yield enhancement of device properties in large-scale silicon wafer fabrication. Full article
(This article belongs to the Special Issue Trends and Perspectives in Photodetectors)
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