New Advances in Semiconductor Devices/Circuits

Dear Colleagues,

Recent advances in SiGe- and InP-based HBT technology have enabled the realization of monolithic microwave-integrated circuits (MMICs) including, for example, LNA, power amplifiers (PAs), MMIC receiver front-end devices, oscillators, and frequency multipliers. Based on InP HBT, a MMIC PA operating at G-band and yielding a 8.9dB gain and 90mW output power was realized. SiGe and InP HBTs are among the fastest transistors available today. For example, a 130 nm SiGe HBT with a collector–emitter breakdown voltage of BVCE0 = 3.5V exhibits a maximum transit and oscillation frequency of fT/fmax = 505/720 GHz, and a 250 nm InP HBT features a frequency of fT/fmax = 380/450GHz, a minimum noise figure of (NFmin) = 1.5/2.5dB at 1/50GHz and a PAE = 35%. Extremely scaled InP HBTs with a 12.5 nm base width are able to yield a record fT = 765 GHz, with a reasonable BVCE0 = 1.65V. SiGe HBT also features a low NFmin = 0.5/1.5dB at 1/50 GHz, good cryogenic performance, excellent reliability and radiation hardness, a low dc power consumption and a high PAE.

This Special Issue welcomes research papers that describe recent advances in semiconductor devices and circuits, not only limited to InP and SiGe HBTs, but also addressing advanced CMOS and AIIIBV. The scope of this Special Issue includes, but is not limited, to the following topics:

(1) High-frequency power amplifiers, LNAs, frequency multipliers, noise sources.

(2) Frequency multipliers.

(3) THz detection.

(4) High-frequency noise in advanced semiconductor devices.

(5) Harmonic distortion, load pull, device linearization.

(6) Advanced-technology semiconductor devices.

(7) Compact modeling.

Dr. Paulius Sakalas
Guest Editor

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• SiGe HBTs
• InP DHBTs
• fT
• fmax scaled CMOS
• GaN HEMT
• high frequency circuits
• power amplifier
• low noise amplifier
• noise parameters
• harmonic distortion
• linearity
• THz detection