Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.7
2.9
Journals
Electronics
Special Issues
Radiation Effects of Advanced Electronic Devices and Circuits, 2nd Edition
share announcement

Radiation Effects of Advanced Electronic Devices and Circuits, 2nd Edition

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: 31 October 2024 | Viewed by 1753

Special Issue Editors

Dr. Yaqing Chi

E-Mail Website
Guest Editor
College of Computer, National University of Defense Technology, Changsha 410073, China
Interests: radiation effects; single event effects; nano-electronic devices; nano-integrated circuits
Special Issues, Collections and Topics in MDPI journals
Dr. Li Cai

E-Mail Website
Guest Editor
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
Interests: radiation effects on semiconductor devices; single event effects
Special Issues, Collections and Topics in MDPI journals
Dr. Chang Cai

E-Mail Website
Guest Editor
State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203, China
Interests: radiation effect; advanced electronic devices; advanced integrated circuit
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Research on the effects of radiation on advanced electronic devices and integrated circuits has increased rapidly in recent years, resulting in many interesting approaches to the modeling of radiation effects and the design of advanced radiation-hardened electronic devices and integrated circuits. This research is strongly driven by the growing need for radiation-hardened higher-performance electronics for space applications like planetary exploration, high-energy physics experiments such as those on the large hadron collider at CERN, and many nuclear applications (e.g., nuclear energy and safety management). With the progressive scaling of integrated circuit technologies and the growing complexity of electronic devices, their susceptibility to ionizing radiation has raised many exciting challenges which are expected to drive research in the coming decade. Although the total ionizing dose (TID) effects on bulk CMOS are well known, little is known about the radiation performance of SOI, FinFET, GAA (gate-all-around), 3D stacking technologies, or novel devices based on carbon nanotubes, graphene, and other advanced materials. Regarding single-event effects (SEEs), continued scaling has drastically enhanced the charge-sharing effect, which leads to multiple-cell upsets and multi-pulse propagations and requires new solutions to reduce radiation sensitivity in advanced digital/analog/RF/power/mixed-signal devices and integrated circuits. The radiation hardness assurance of complex systems with multiple components in mixed technologies also necessitates new testing paradigms and verification methodologies to limit the time and cost of evaluation.

The main aim of this Special Issue is to seek high-quality submissions that highlight emerging applications and address recent breakthroughs in modeling radiation effects in advanced electronic devices and integrated circuits; radiation-hardening techniques for advanced digital, analog, RF, and mixed-signal integrated circuits; and testing methodologies for radiation effect characterization and hardness evaluation. The topics of interest for this Special Issue include, but are not limited to, the following:

  • Basic mechanisms of radiation effects in advanced electronic devices, integrated circuits, and novel devices.
  • Compact modeling of radiation effects in advanced electronic devices, integrated circuits, and novel devices.
  • Radiation hardening and fault tolerance for advanced electronic devices, integrated circuits, and novel devices.
  • Radiation environment influence: space, atmospheric, terrestrial, and artificial.
  • Radiation effect characterization and radiation hardness assurance testing.
  • New developments of interest to the radiation effect community.

Dr. Yaqing Chi
Dr. Li Cai
Dr. Chang Cai
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • radiation effect
  • total ionizing dose
  • single-event effect
  • spacecraft charging
  • radiation hardening
  • electronic device
  • integrated circuit
  • radiation environment
  • hardness assurance

Related Special Issue

Published Papers (4 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

13 pages, 2238 KiB  
Article
Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation
by Xiaohong Zhao, Hongwei Wang, Yihao Zhang, You Chen, Siyi Cheng, Xing Wang, Fang Peng, Yongjian Yang, Guannan Tang, Yurong Bai and Shaowei Sun
Electronics 2024, 13(10), 1831; https://doi.org/10.3390/electronics13101831 - 9 May 2024
Viewed by 200
Abstract
The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (ISE [...] Read more.
The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (ISE) and ideality factor in the ideal region (NE) in the forward Gummel characteristics, the zero-biased capacitance (Cje) and the grading factor (Mjer) in the BE junction capacitance, and the transit time parameter in the base region (Tfb), are analysed to delve into the degradation mechanism induced by proton irradiation. The displacement damage, induced by proton irradiation in the space charge region of the base–emitter junction and in the quasi-neutral bulk base region, is found to be responsible for the decrease in current gain and cut-off frequency. After annealing, the variation rates of the parameters decrease significantly compared to post-irradiation. This suggests that the recombination of unstable defects leads to a slight recovery in the degradation characteristics of InP HBTs after a period of annealing. Full article
(This article belongs to the Special Issue Radiation Effects of Advanced Electronic Devices and Circuits, 2nd Edition)
►▼ Show Figures

Figure 1

13 pages, 5293 KiB  
Article
Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser
by Sai Li, Longcheng Huang, Jifei Ye, Yanji Hong, Ying Wang, Heyan Gao and Qianqian Cui
Electronics 2024, 13(9), 1795; https://doi.org/10.3390/electronics13091795 - 6 May 2024
Viewed by 338
Abstract
This experimental study investigates the damage effects of nanosecond pulse laser irradiation on silicon solar cells. It encompasses the analysis of transient pulse signal waveform characteristics at the cells’ output and changes in electrical parameters, such as I–V curves before and after laser [...] Read more.
This experimental study investigates the damage effects of nanosecond pulse laser irradiation on silicon solar cells. It encompasses the analysis of transient pulse signal waveform characteristics at the cells’ output and changes in electrical parameters, such as I–V curves before and after laser irradiation under varying laser fluence and background light intensities, and explores the underlying action mechanisms of laser irradiation. The study reveals that as the laser fluence increases up to 4.0 J/cm2, the peak value of the transient pulse signal increases by 47.5%, while the pulse width augments by 88.2% compared to the initial transient pulse signal. Furthermore, certain parameters, such as open-circuit voltage, short-circuit current, and peak power obtained, from the measured I–V curve indicate a threshold laser fluence for functional degradation of the solar cell at approximately 1.18 ± 0.42 J/cm2. Results obtained from laser irradiation under different background light intensities underscore the significant influence of background light on laser irradiation of silicon cells, with the most severe damage occurring in the absence of light. Moreover, findings from laser irradiation at multiple locations on the silicon cell demonstrate a linear decrease in the output voltage of the silicon cell with an increase in the number of irradiation points. Full article
(This article belongs to the Special Issue Radiation Effects of Advanced Electronic Devices and Circuits, 2nd Edition)
►▼ Show Figures

Figure 1

13 pages, 4738 KiB  
Article
Evaluation and Mitigation of Weight-Related Single Event Upsets in a Convolutional Neural Network
by Yulong Cai, Ming Cai, Yanlai Wu, Jian Lu, Zeyu Bian, Bingkai Liu and Shuai Cui
Electronics 2024, 13(7), 1296; https://doi.org/10.3390/electronics13071296 - 30 Mar 2024
Viewed by 431
Abstract
Single Event Upsets (SEUs) are most likely to cause bit flips within the trained parameters of a convolutional neural network (CNN). Therefore, it is crucial to analyze and implement hardening techniques to enhance their reliability under radiation. In this paper, random fault injections [...] Read more.
Single Event Upsets (SEUs) are most likely to cause bit flips within the trained parameters of a convolutional neural network (CNN). Therefore, it is crucial to analyze and implement hardening techniques to enhance their reliability under radiation. In this paper, random fault injections into the weights of LeNet-5 were carried out in order to evaluate and propose strategies to improve the reliability of a CNN. According to the results of an SEU fault injection, the accuracy of the CNN can be classified into the following three categories: benign conditions, poor conditions, and critical conditions. Two efficient methods for mitigating weight-related SEUs are proposed, as follows: weight limiting and Triple Modular Redundancy (TMR) for the critical bit of the critical layer. The hardening results show that when the number of SEU faults is small, the weight limiting almost completely eliminates the critical and poor conditions of LeNet-5’s accuracy. Additionally, even when the number of SEU faults is large enough, combining the weight limiting and TMR methods for the critical bit of the critical layer can retain the occurrence rate of benign conditions at 98%, saving 99.3% of the hardware resources compared to the Full-TMR hardening method. Full article
(This article belongs to the Special Issue Radiation Effects of Advanced Electronic Devices and Circuits, 2nd Edition)
►▼ Show Figures

Figure 1

14 pages, 2338 KiB  
Article
Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes
by Mingzhu Xun, Yudong Li and Mingyu Liu
Electronics 2024, 13(6), 1086; https://doi.org/10.3390/electronics13061086 - 15 Mar 2024
Viewed by 550
Abstract
In this paper, the effects of proton and gamma irradiation on reach-through single-photon avalanche diodes (SPADs) are investigated. The I–V characteristics, gain and spectral response of SPAD devices under proton and gamma irradiation were measured at different proton energies and irradiation bias conditions. [...] Read more.
In this paper, the effects of proton and gamma irradiation on reach-through single-photon avalanche diodes (SPADs) are investigated. The I–V characteristics, gain and spectral response of SPAD devices under proton and gamma irradiation were measured at different proton energies and irradiation bias conditions. Comparison experiments of proton and gamma irradiation were performed in the radiation environment of geosynchronous transfer orbit (GTO) with two different radiation shielding designs at the same total ionizing dose (TID). The results show that after 30 MeV and 60 MeV proton irradiation, the leakage current and gain increase, while the spectral response decreases slightly. The leakage current degradation is more severe under the “ON”-bias condition compared to the “OFF”-bias condition, and it is more sensitive to the displacement radiation damage caused by protons compared to gamma rays under the same TID. Further analysis reveals that the non-elastic and elastic cross-section of protons in silicon is 1.05 × 105 times greater than that of gamma rays. This results in SPAD devices being more sensitive to displacement radiation damage than ionizing radiation damage. Under the designed shielding conditions, the leakage current, gain and spectral response parameters of SPADs do not show significant performance degradation in the orbit. Full article
(This article belongs to the Special Issue Radiation Effects of Advanced Electronic Devices and Circuits, 2nd Edition)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-4
Back to TopTop