Recent Advances in Nanoelectronics for Energy Conversion, Storage, and Saving

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: closed (30 April 2022) | Viewed by 21500

Special Issue Editors


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Guest Editor
Nanotechnology and Advanced Materials Laboratory, Electrical and Computer Engineering Department, University of the Peloponnese, 26334 Patras, Greece
Interests: nanostructured semiconductors; third-generation photovoltaics including (perovskite, dye sensitized solar cells); organic electronics
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Guest Editor
Department of Electrical and Computer Engineering, Hellenic Mediterranean University, Estavromenos, 71410 Heraklion, Crete, Greece
Interests: organic photovoltaics; graphene; plasmonics; perovskite solar cells; nanotechnology
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Department of Electrical and Computer Engineering, University of the Peloponnese, GR26334 Patras, Greece
Interests: perovskite solar cells; dye-sensitized solar cells; emerging photovoltaic technologies upscaling; agrivoltaics; composite materials; nanomaterials

Special Issue Information

Dear Colleagues,

In order to meet the future global energy needs in a sustainable manner, it is important to improve the methods of energy production, storage, and saving. In our days, the development of new materials and device architectures allowing a low-cost, efficient, and stable energy management is undoubtfully of the utmost importance. This Special Issue is designed to provide a platform for sharing discussions on the most recent advances, remaining challenges, and frontiers in energy management by nanoelectronics. Specific topics of interest include, but are not limited to: (a) energy conversion by next-generation and emerging photovoltaic technologies and nanogenerators, (b) energy storage by advanced nanostructured systems, including supercapacitor, battery, and fuel cell technologies, and (c) intelligent energy saving by smart technologies, such as energy-efficient windows (electrochromics), smart lighting, etc. High-quality original papers, short communications, and review articles are welcome.

Prof. Dr. Elias Stathatos
Prof. Dr. Emmanuel Kymakis
Dr. Dimitris A. Chalkias
Guest Editors

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Published Papers (9 papers)

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Research

19 pages, 4324 KiB  
Communication
Performance of a Pd-Zn Cathode Electrode in a H2 Fueled Single PEM Fuel Cell
by Georgios Bampos and Symeon Bebelis
Electronics 2022, 11(17), 2776; https://doi.org/10.3390/electronics11172776 - 03 Sep 2022
Cited by 2 | Viewed by 1372
Abstract
A 21.7 wt.% Pd—7.3 wt.% Zn/C electrocatalyst prepared via the wet impregnation (w.i.) method was deposited onto commercial carbon cloth (E-TEK) and tested towards its electrocatalytic performance as a cathode electrode material for oxygen reduction reaction (ORR) in a H2 fueled single [...] Read more.
A 21.7 wt.% Pd—7.3 wt.% Zn/C electrocatalyst prepared via the wet impregnation (w.i.) method was deposited onto commercial carbon cloth (E-TEK) and tested towards its electrocatalytic performance as a cathode electrode material for oxygen reduction reaction (ORR) in a H2 fueled single proton-exchange membrane fuel cell (PEMFC). A commercial PtRu electrode (E-TEK) was used as PEM anode for hydrogen oxidation reaction (HOR). The performance of the aforementioned PEMFC was compared with that of the same PEMFC with two different Pt-based cathodes, which were prepared by deposition onto commercial carbon cloth (E-TEK) of 29 wt.% Pt/C synthesized via w.i. and of commercial 29 wt.% Pt/C (TKK). The metal loading of the tested cathode electrodes was 0.5 mgmet cm−2. Comparison was based both on polarization curves and on electrochemical impedance spectroscopy (EIS) measurements at varying cell potential. In terms of power density, the lowest and highest performance was exhibited by the PEMFC with the 21.7 wt.% Pd—7.3 wt.% Zn/C cathode and the PEMFC with the commercial 29 wt.% Pt/C (TKK) cathode electrode, respectively. This behavior was in accordance with the results of EIS measurements, which showed that the PEMFC with the 21.7 wt.% Pd—7.3 wt.% Zn/C cathode exhibited the highest polarization resistance. Full article
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13 pages, 9341 KiB  
Article
Luminescent Downshifting Silicon Quantum Dots for Performance Enhancement of Polycrystalline Silicon Solar Cells
by Qais Masaadeh, Eleni Kaplani and Yimin Chao
Electronics 2022, 11(15), 2433; https://doi.org/10.3390/electronics11152433 - 04 Aug 2022
Cited by 1 | Viewed by 1984
Abstract
Silicon quantum dots (Si-QDs) with luminescent downshifting properties have been used for the efficiency enhancement of solar cells. In this study, Phenylacetylene-capped silicon quantum dots (PA Si-QDs) have been fabricated and applied as luminescent downshifting material on polycrystalline silicon solar cells, by dropcasting. [...] Read more.
Silicon quantum dots (Si-QDs) with luminescent downshifting properties have been used for the efficiency enhancement of solar cells. In this study, Phenylacetylene-capped silicon quantum dots (PA Si-QDs) have been fabricated and applied as luminescent downshifting material on polycrystalline silicon solar cells, by dropcasting. The PA Si-QD coated solar cell samples presented an average increase in the short circuit current (Isc) of 0.75% and 1.06% for depositions of 0.15 mg and 0.01 mg on 39 mm × 39 mm pc-Si solar cells, respectively. The increase was further enhanced by full encapsulation of the sample leading to overall improved performance of about 3.4% in terms of Isc and 4.1% in terms of power output (Pm) when compared to the performance of fully encapsulated reference samples. The PA Si-QD coating achieved a reduction in specular reflectance at 377 nm of 61.8%, and in diffuse reflectance of 44.4%. The increase observed in the Isc and Pm is a promising indicator for the use of PA Si-QDs as luminescent downshifting material to improve the power conversion efficiency of pc-Si solar cells. Full article
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13 pages, 2864 KiB  
Article
Band Bending and Trap Distribution along the Channel of Organic Field-Effect Transistors from Frequency-Resolved Scanning Photocurrent Microscopy
by Gion Kalemai, Nikolaos Vagenas, Athina Giannopoulou and Panagiotis Kounavis
Electronics 2022, 11(11), 1799; https://doi.org/10.3390/electronics11111799 - 06 Jun 2022
Viewed by 1514
Abstract
The scanning photocurrent microscopy (SPCM) method is applied to pentacene field-effect transistors (FETs). In this technique, a modulated laser beam is focused and scanned along the channel of the transistors. The resulting spatial photocurrent profile is attributed to extra free holes generated from [...] Read more.
The scanning photocurrent microscopy (SPCM) method is applied to pentacene field-effect transistors (FETs). In this technique, a modulated laser beam is focused and scanned along the channel of the transistors. The resulting spatial photocurrent profile is attributed to extra free holes generated from the dissociation of light-created excitons after their interaction with trapped holes. The trapped holes result from the local upward band bending in the accumulation layer depending on the applied voltages. Thus, the photocurrent profile along the conducting channel of the transistors reflects the pattern of the trapped holes and upward band bending under the various operating conditions of the transistor. Moreover, it is found here that the frequency-resolved SPCM (FR-SPCM) is related to the interaction of free holes via trapping and thermal release from active probed traps of the first pentacene monolayers in the accumulation layer. The active probed traps are selected by the modulation frequency of the laser beam so that the FR-SPCM can be applied as a spectroscopic technique to determine the energy distribution of the traps along the transistor channel. In addition, a crossover is found in the FR-SPCM spectra that signifies the transition from empty to partially empty probed trapping states near the corresponding trap quasi-Fermi level. From the frequency of this crossover, the energy gap from the quasi-Fermi Etp level to the corresponding local valence band edge Ev, which is bent up by the gate voltage, can be estimated. This allows us to spatially determine the magnitude of the band bending under different operation conditions along the channel of the organic transistors. Full article
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12 pages, 2059 KiB  
Article
Epoxy-Based/BaMnO4 Nanodielectrics: Dielectric Response and Energy Storage Efficiency
by Despoina I. Batsouli, Anastasios C. Patsidis and Georgios C. Psarras
Electronics 2021, 10(22), 2803; https://doi.org/10.3390/electronics10222803 - 16 Nov 2021
Cited by 3 | Viewed by 1614
Abstract
Compact capacitive energy storing/harvesting systems could play a key role in the urgent need for more energy-efficient technologies to address both energy and environmental issues. Therein, the purpose of the present work is to develop and investigate epoxy/BaMnO4 nanocomposites at various filler [...] Read more.
Compact capacitive energy storing/harvesting systems could play a key role in the urgent need for more energy-efficient technologies to address both energy and environmental issues. Therein, the purpose of the present work is to develop and investigate epoxy/BaMnO4 nanocomposites at various filler concentrations, which could be applicable as compact materials systems for energy storage and harvesting. Broadband dielectric spectroscopy was used for studying the dielectric properties and the relaxation processes of the examined nanodielectrics. The energy storing/retrieving ability of the nanocomposites was also evaluated via DC charge–discharge experiments. The coefficient of energy efficiency (neff) was found for all prepared nanocomposites to evaluate the energy performance of the systems. Dielectric data divulge the existence of two matrix-related relaxations, i.e., α-mode and β-mode, attributed to the glass-to-rubber transition of the polymer matrix and re-orientation of polar side groups, respectively. Interfacial polarization was also identified in the low-frequency and high-temperature region. The 7 phr BaMnO4 nanocomposite exhibits the best performance in terms of the stored and harvested energies compared to all systems. On the other hand, the 5 phr, 3 phr and 1 phr nanocomposites display optimum energy performance, reaching high values of neff. Full article
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11 pages, 2073 KiB  
Article
Use of Different Metal Oxide Coatings in Stainless Steel Based ECDs for Smart Textiles
by Martin Rozman, Nikolina Cetin, Urban Bren and Miha Lukšič
Electronics 2021, 10(20), 2529; https://doi.org/10.3390/electronics10202529 - 17 Oct 2021
Cited by 2 | Viewed by 1630
Abstract
Electrochromism is the ability of a material to selectively change its coloration under the influence of an external electric current/potential and maintain it even after the power source has been disconnected. Devices that use such a mechanism are known as electrochromic devices (ECDs). [...] Read more.
Electrochromism is the ability of a material to selectively change its coloration under the influence of an external electric current/potential and maintain it even after the power source has been disconnected. Devices that use such a mechanism are known as electrochromic devices (ECDs). Over the years, significant effort has been invested into the development of flexible ECDs. Such electrochromic tapes or fibers can be used as smart textiles. Recently, we utilized a novel geometrical approach in assembling electrochromic tapes which does not require the use of optically transparent electrodes. The so-called inverted sandwich ECD configuration can employ various color-changing mechanisms, e.g., intercalation, redox reactions of electrolytes or reactions on electrode surfaces. One of the most frequently used electrochromic metal oxides is WO3. However, other metal oxides with different coloration responses also exist. In this paper, we explore the use of V2O5 and TiO2 in metal-tape-based ECDs in the inverted sandwich configuration and compare their performance with WO3-based devices. Morphological features of metal oxide thin layers were investigated with scanning electron microscopy (SEM), and the performance of the tapes was investigated electrochemically and spectroscopically. We demonstrate that well-established preparation techniques (e.g., sol–gel synthesis) along with coating approaches (e.g., dipping) are adequate to prepare optically nontransparent fiber electrodes. Depending on the metal oxide, flexible electrochromic fiber devices exhibiting different coloration patterns can be assembled. Devices with TiO2 showed little coloration response, while much better performance was achieved in the case of V2O5 and WO3 ECDs. Full article
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17 pages, 3500 KiB  
Article
Toward a Scalable Fabrication of Perovskite Solar Cells under Fully Ambient Air Atmosphere: From Spin-Coating to Inkjet-Printing of Perovskite Absorbent Layer
by Aggeliki Karavioti, Dimitris A. Chalkias, Giannis Katsagounos, Argyroula Mourtzikou, Alexandros N. Kalarakis and Elias Stathatos
Electronics 2021, 10(16), 1904; https://doi.org/10.3390/electronics10161904 - 08 Aug 2021
Cited by 9 | Viewed by 2907
Abstract
Up until now, the vast majority of perovskite solar cells (PSCs) have relied on the spin-coating of perovskite precursor solution under inert fully controlled conditions, with the performance of solar cells that are developed by alternative techniques and under an ambient atmosphere to [...] Read more.
Up until now, the vast majority of perovskite solar cells (PSCs) have relied on the spin-coating of perovskite precursor solution under inert fully controlled conditions, with the performance of solar cells that are developed by alternative techniques and under an ambient atmosphere to lag far behind. This impedes the technology transfer from the laboratory to industrial large-scale production; thus, the investigation of new scalable techniques should be thoroughly considered. The present work constitutes one of the few investigations on the application of inkjet-printing as an advanced alternative technique to the conventional spin-coating technique used for the fabrication of fully ambient air-processed perovskite absorbent layers for carbon-based hole transport layer-free PSCs. A systematic study of the characteristics of the perovskite material and solar cells indicated that the coffee-ring effect combined with poor ink penetration into the mesoporous network of the anode semiconductor were the main reasons for obtaining poor perovskite structure morphology and lower PSC performance by inkjet-printing, which arises from a lower internal quantum efficiency and an increased charge transfer and recombination rate. On the other hand, the crystallinity and optical characteristics of the materials obtained by the compared techniques did not differ considerably, while small differences were observed in the hysteretic behavior and long-term stability of the solar cells. Full article
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18 pages, 2238 KiB  
Article
Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications
by Chrysa Aivalioti, Alexandros Papadakis, Emmanouil Manidakis, Maria Kayambaki, Maria Androulidaki, Katerina Tsagaraki, Nikolaos T. Pelekanos, Constantinos Stoumpos, Mircea Modreanu, Gabriel Crăciun, Cosmin Romanitan and Elias Aperathitis
Electronics 2021, 10(9), 988; https://doi.org/10.3390/electronics10090988 - 21 Apr 2021
Cited by 4 | Viewed by 2531
Abstract
Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) [...] Read more.
Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices. Full article
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12 pages, 3277 KiB  
Article
Perylene Based Solution Processed Single Layer WOLED with Adjustable CCT and CRI
by Volkan Bozkus, Erkan Aksoy and Canan Varlikli
Electronics 2021, 10(6), 725; https://doi.org/10.3390/electronics10060725 - 19 Mar 2021
Cited by 6 | Viewed by 2537
Abstract
In solution processed single layer white organic light emitting diode (WOLED) applications, the choice of host matrix and optimization of dopant levels represent two crucial parameters to consider. In this work, poly(N-vinylcarbazole) (PVK): 2-(4-Biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) and PVK:1,3-bis[(4-tert-butylphenyl)-1,3,4-oxadiazolyl] phenylene (OXD-7) matrices are used as [...] Read more.
In solution processed single layer white organic light emitting diode (WOLED) applications, the choice of host matrix and optimization of dopant levels represent two crucial parameters to consider. In this work, poly(N-vinylcarbazole) (PVK): 2-(4-Biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) and PVK:1,3-bis[(4-tert-butylphenyl)-1,3,4-oxadiazolyl] phenylene (OXD-7) matrices are used as hosts for perylene based devices. PVK:PBD presented better compatibility and lower turn-on voltages compared to PVK:OXD-7. Benefiting from the exciplex emission observed at 630 nm, a color rendering index (CRI) value of 90 is reached with the device containing PVK:PBD as the host and 0.1 wt.% of an orange emitting perylene derivative, i.e., PDI. Introduction of the perylene based green emitter, i.e., PTE, in this emitting layer not only caused a fading in the exciplex emission, but also resulted in disappearance of the electroplex peak at 535 nm, which is detected between PVK:PBD and PTE in bare PTE containing devices. Full visible range coverage is achieved by optimizing the PDI:PTE ratio. WOLED containing PVK:PBD:0.06 wt.% PDI:0.03 wt.% PTE presented high CRI (≥95) and adjustable correlated color temperatures (CCT, 3800 K-5100 K). Full article
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9 pages, 2451 KiB  
Article
Solar Energy Conversion and Storage Using a Photocatalytic Fuel Cell Combined with a Supercapacitor
by Tatiana Santos Andrade, Vassilios Dracopoulos and Panagiotis Lianos
Electronics 2021, 10(3), 273; https://doi.org/10.3390/electronics10030273 - 23 Jan 2021
Cited by 6 | Viewed by 2843
Abstract
This work studies the production of electricity by a photocatalytic fuel cell and its storage in a supercapacitor. We propose a simple construction, where a third electrode bearing activated carbon is added to the device to form a supercapacitor electrode in combination with [...] Read more.
This work studies the production of electricity by a photocatalytic fuel cell and its storage in a supercapacitor. We propose a simple construction, where a third electrode bearing activated carbon is added to the device to form a supercapacitor electrode in combination with the supporting electrolyte of the cell. The photocatalytic fuel cell is based on a CdS-sensitized mesoporous TiO2 photoanode and an air cathode bearing only nanoparticulate carbon as an oxygen reduction electrocatalyst. Full article
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