Chemical Vapor Deposition (CVD) Techniques in Materials Science for Electronic Devices Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".
Deadline for manuscript submissions: 10 May 2024 | Viewed by 1209
Special Issue Editors
Interests: amorphous semiconductors; nano and microcrystalline materials; silicon–germanium alloys; sensors; microbolometers; silicon solar cells; HIT solar cells
Interests: amorphous semiconductors; silicon-Germanium alloys; sensors; microbolometers; thermoelectric devices
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
At the present time, different chemical vapor deposition (CVD) techniques have become an essential part of the semiconductor industry and materials research for the development of a large variety of materials with applications in electronic devices. Atmospheric pressure CVD (APCVD), low-pressure CVD (LPCVD), plasma-enhanced CVD (PECVD) and hot wire CVD (HWCVD) are the most used techniques for the deposition of amorphous, nanocrystalline, microcrystalline and polycrystalline phases of semiconductors. Those materials are employed on thin film devices, as sensors, thin film solar cells, thin film transistors (TFTs), light-emitting diodes (LEDs), silicon heterojunction solar cells (HIT) and micro-electro-mechanical systems (MEMS), among others.
This Special Issue invites original articles dedicated to the following topics, in which CVD techniques are used: deposition and characterization of amorphous semiconductors, hydrogenated amorphous silicon (a-Si:H) and alloys, as hydrogenated amorphous silicon–germanium (a-SiGe:H), and their application on electronic devices; hydrogenated amorphous silicon carbide (a-SiC:H) for applications in light emission and LEDs; nano- and microcrystalline silicon (nc-Si, µc-Si:H) and their applications in devices, as thin film solar cells and TFTs; polycrystalline silicon (poly-Si) and its application on MEMS; infrared sensors as microbolometers based on a-Si:H and a-SiGe:H; silicon-rich oxide (SRO) for light emission applications and UV sensors; heterojunction solar cells (HIT) based on crystalline silicon (c-Si:H) and a-Si:H thin films.
Dr. Mario Moreno Moreno
Dr. Alfonso Torres
Guest Editors
Manuscript Submission Information
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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.
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Keywords
- thin films
- CVD
- LPCVD
- PECVD
- HWCVD
- amorphous semiconductors
- microcrystalline semiconductors
- silicon
- germanium
- silicon–germanium
- silicon–carbide
- silicon-rich oxide
