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Electrical and Optical Properties of Metal Oxide Thin Films
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Electrical and Optical Properties of Metal Oxide Thin Films

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: 20 December 2024 | Viewed by 4188

Special Issue Editor

Prof. Dr. Albena Paskaleva

E-Mail Website
Guest Editor
Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria
Interests: physics, technology, electrical, and structural properties of dielectric and semiconductor layers; emerging nonvolatile memories; nanoelectronics; gas sensors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Metal oxide thin films are among the primary factors boosters of the recent advances in microelectronics and optoelectronics which have resulted in explosive growth in communications and information processing, storage and display applications. Metal oxides present a wide diversity of electrical, optical, magnetic, piezoelectric, and acoustic properties with uses in a wide variety of applications such as: thin-film transistors, light-emitting diodes, piezoelectric transducers, different types of sensors, optical waveguides, photodetectors, photovoltaic cells, surface acoustic wave devices, transparent conductive oxides, etc. A number of advanced deposition techniques, e.g., rf magnetron sputtering, pulsed laser deposition, sol–gel spin coating, chemical vapor deposition, atomic layer deposition, etc., can be used to obtain metal oxide thin films with different morphologies, crystallinities, electronic and defect structure. The successful application of metal oxides depends to a great extent on finding effective ways to modify and tune their electrical and optical properties.

In this Special Issue, we will address recent progress in metal oxide thin films, the technology behind them, and their advanced characterization. A special focus should be placed on their electrical and optical properties in relation to specific micro-, opto- and acoustoelectronic as well as sensor applications.

It is my pleasure to invite you to submit a manuscript for inclusion in this Special Issue. Full papers, communications, and reviews are all welcome.

Prof. Dr. Albena Paskaleva
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • metal oxide thin films
  • electrical and optical properties of metal oxide thin films
  • technology of metal oxide thin films
  • application of metal oxide thin films

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Published Papers (4 papers)

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Research

15 pages, 1126 KiB  
Article
Active Learning for Rapid Targeted Synthesis of Compositionally Complex Alloys
by Nathan S. Johnson, Aashwin Ananda Mishra, Dylan J. Kirsch and Apurva Mehta
Materials 2024, 17(16), 4038; https://doi.org/10.3390/ma17164038 - 14 Aug 2024
Viewed by 519
Abstract
The next generation of advanced materials is tending toward increasingly complex compositions. Synthesizing precise composition is time-consuming and becomes exponentially demanding with increasing compositional complexity. An experienced human operator does significantly better than a novice but still struggles to consistently achieve precision when [...] Read more.
The next generation of advanced materials is tending toward increasingly complex compositions. Synthesizing precise composition is time-consuming and becomes exponentially demanding with increasing compositional complexity. An experienced human operator does significantly better than a novice but still struggles to consistently achieve precision when synthesis parameters are coupled. The time to optimize synthesis becomes a barrier to exploring scientifically and technologically exciting compositionally complex materials. This investigation demonstrates an active learning (AL) approach for optimizing physical vapor deposition synthesis of thin-film alloys with up to five principal elements. We compared AL-based on Gaussian process (GP) and random forest (RF) models. The best performing models were able to discover synthesis parameters for a target quinary alloy in 14 iterations. We also demonstrate the capability of these models to be used in transfer learning tasks. RF and GP models trained on lower dimensional systems (i.e., ternary, quarternary) show an immediate improvement in prediction accuracy compared to models trained only on quinary samples. Furthermore, samples that only share a few elements in common with the target composition can be used for model pre-training. We believe that such AL approaches can be widely adapted to significantly accelerate the exploration of compositionally complex materials. Full article
(This article belongs to the Special Issue Electrical and Optical Properties of Metal Oxide Thin Films)
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14 pages, 6972 KiB  
Article
Optical, Electrical, Structural, and Thermo-Mechanical Properties of Undoped and Tungsten-Doped Vanadium Dioxide Thin Films
by Chuen-Lin Tien, Chun-Yu Chiang, Ching-Chiun Wang and Shih-Chin Lin
Materials 2024, 17(10), 2382; https://doi.org/10.3390/ma17102382 - 16 May 2024
Cited by 1 | Viewed by 882
Abstract
The undoped and tungsten (W)-doped vanadium dioxide (VO2) thin films were prepared by electron beam evaporation associated with ion-beam-assisted deposition (IAD). The influence of different W-doped contents (3–5%) on the electrical, optical, structural, and thermo-mechanical properties of VO2 thin films [...] Read more.
The undoped and tungsten (W)-doped vanadium dioxide (VO2) thin films were prepared by electron beam evaporation associated with ion-beam-assisted deposition (IAD). The influence of different W-doped contents (3–5%) on the electrical, optical, structural, and thermo-mechanical properties of VO2 thin films was investigated experimentally. Spectral transmittance results showed that with the increase in W-doped contents, the transmittance in the visible light range (400–750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO2 thin film decreases from −0.276 GPa to −0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO2 thin films from 30 °C to 100 °C showed the most significant change in transmittance for the 5% W-doped VO2 thin film. When the heating temperature exceeds 55 °C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO2 thin films. Full article
(This article belongs to the Special Issue Electrical and Optical Properties of Metal Oxide Thin Films)
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11 pages, 3152 KiB  
Article
Photovoltaic Effect of La and Mn Co-Doped BiFeO3 Heterostructure with Charge Transport Layers
by Jiwei Lv and Huanpo Ning
Materials 2024, 17(9), 2072; https://doi.org/10.3390/ma17092072 - 28 Apr 2024
Viewed by 1000
Abstract
Bismuth ferrite BiFeO3 (BFO)-based ferroelectrics have great potential as inorganic perovskite-like oxides for future solar cells applications due to their unique physical properties. In this work, La and Mn co-doped BFO thin films with compositions Bi0.9La0.1(Fe1−xMn [...] Read more.
Bismuth ferrite BiFeO3 (BFO)-based ferroelectrics have great potential as inorganic perovskite-like oxides for future solar cells applications due to their unique physical properties. In this work, La and Mn co-doped BFO thin films with compositions Bi0.9La0.1(Fe1−xMnx)O3 (x = 0, 0.05, 0.1, 0.15) (denoted as BLF, BLFM5, BLFM10, BLFM15, respectively) were prepared via a sol–gel technique on indium tin oxide (ITO) glass. All the films are monophasic, showing good crystallinity. The optical bandgap Eg was found to decrease monotonously with an increase in the Mn doping amount. Compared with other compositions, the BLFM5 sample exhibits a better crystallinity and less oxygen vacancies as indicated by XRD and XPS measurements, thereby achieving a better J–V performance. Based on BLFM5 as the light absorbing layer, the ITO/ZnO/BLFM5/Pt and ITO/ZnO/BLFM5/NiO/Pt heterostructure devices were designed and characterized. It was found that the introduction of the ZnO layer increases both the open circuit voltage (Voc) and the short circuit current density (Jsc) with Voc = 90.2 mV and Jsc = 6.90 μA/cm2 for the Pt/ BLFM5/ZnO/ITO device. However, the insertion of the NiO layer reduces both Voc and Jsc, which is attributed to the weakened built-in electric field at the NiO/BLFM5 interface. Full article
(This article belongs to the Special Issue Electrical and Optical Properties of Metal Oxide Thin Films)
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12 pages, 7065 KiB  
Article
Strong Magneto-Optical Kerr Effects in Ni-Doped ZnO Nanolaminate Structures Obtained by Atomic Layer Deposition
by Armando Galluzzi, Krastyo Buchkov, Blagoy S. Blagoev, Albena Paskaleva, Ivalina Avramova, Vladimir Mehandhziev, Peter Tzvetkov, Penka Terziyska, Daniela Kovacheva and Massimiliano Polichetti
Materials 2023, 16(19), 6547; https://doi.org/10.3390/ma16196547 - 4 Oct 2023
Cited by 1 | Viewed by 1259
Abstract
The magneto-optical (MO) Kerr effects for ZnO and ZnO:Ni-doped nanolaminate structures prepared using atomic layer deposition (ALD) have been investigated. The chemical composition and corresponding structural and morphological properties were studied using XRD and XPS and compared for both nanostructures. The 2D array [...] Read more.
The magneto-optical (MO) Kerr effects for ZnO and ZnO:Ni-doped nanolaminate structures prepared using atomic layer deposition (ALD) have been investigated. The chemical composition and corresponding structural and morphological properties were studied using XRD and XPS and compared for both nanostructures. The 2D array gradient maps of microscale variations of the Kerr angle polarization rotation were acquired by means of MO Kerr microscopy. The obtained data revealed complex behavior and broad statistical dispersion and showed distinct qualitative and quantitative differences between the undoped ZnO and ZnO:Ni-doped nanolaminates. The detected magneto-optical response is extensively inhomogeneous in ZnO:Ni films, and a giant Kerr polarization rotation angle reaching up to ~2° was established. This marks the prospects for further development of magneto-optical effects in ALD ZnO modified by transition metal oxide nanostructures. Full article
(This article belongs to the Special Issue Electrical and Optical Properties of Metal Oxide Thin Films)
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