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Advanced Semiconductors for Photonics and Electronics Volume II

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 148

Special Issue Editor


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Guest Editor
NOVA School of Sciences and Technology, FCT NOVA, CENIMAT|i3N, Largo da Torre, 2825-149 Caparica, Campus de Caparica, 2829-516 Caparica, Portugal
Interests: thin-film devices; microelectronic devices; metal oxides; flexible electronics and sensors; memory-based applications; perylene-based electronics
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Special Issue Information

Dear Colleagues,

Technology today is facing a new era with transparent, flexible, and wearable electronics, which however require new types of semiconductive materials, able to be processed at lower temperatures or with wider bandgaps and tuned properties when compared to Si-based technology. Different types of semiconductors materials are being studied and synthesized, and the role of morphology, crystallinity, doping, processing temperatures, and multicompound configurations is being studied. Metal–oxide semiconductors, perovskite organic–inorganic structures, group III nitrides, and SiC are just some examples among several wide-bandgap materials that have been explored for a broad range of applications, from photovoltaics, flat panel displays, and sensors to emergent MIM memory devices.

In this Special Issue on “Advanced Semiconductors for Photonics and Electronics”, researchers are invited to submit their recent advances in the processing of tuned semiconductive materials, giving special attention to the role of doping, crystallinity, and morphology in the observed electrical properties. Different processing or fabrication techniques will be presented, and the characterization of semiconductor materials as well as charge transport simulations will be highlighted. Some potential topics include but are not limited to:

  • Wide bandgap materials and devices;
  • Semiconductor device applications;
  • Synthesis, controllable growth, and influence of processing steps in electrical properties;
  • Characterization of structural, electronic, and optical properties;
  • Theory and modeling of charge transport phenomena;
  • Implementation of 1D and 2D semiconductor configurations.

Dr. Joana Dória Vaz Pinto
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • organic photovoltaics and semiconductors
  • perovskite photovoltaics
  • flexible electronics
  • semiconductors
  • optoelectronic materials and devices

Published Papers

There is no accepted submissions to this special issue at this moment.
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