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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 14163

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Dr. Joana Dória Vaz Pinto

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NOVA School of Sciences and Technology, FCT NOVA, CENIMAT|i3N, Largo da Torre, 2825-149 Caparica, Campus de Caparica, 2829-516 Caparica, Portugal
Interests: thin-film devices; microelectronic devices; metal oxides; flexible electronics and sensors; memory-based applications; perylene-based electronics
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Dear Colleagues,

Technology nowadays is facing a new era where transparent, flexible and wearable electronics are demanding the search for new types of semi conductive materials, able to be processed at lower temperatures or having wider band-gaps and tuned properties when compared to Si based technology. Different types of semiconductors materials are been studied and synthesized, and the role of morphology, crystallinity, doping, processing temperatures and multicompound configurations are been studied. Metal oxide semiconductors, perovskites organic–inorganic structures, group III nitrides and SiC are just some examples among several wide band gap materials been explored for a broad range of applications from photovoltaics, flat panel displays, sensors to emergent MIM memory devices and so on.

In this Special Issue on “Advanced Semiconductors for Photonics and Electronics”, researchers are invited to submit their recent advances in the processing of tuned semconductive materials giving special attention to the role of doping, crystallinity, morphology in the observed electrical properties. Different processing or fabrication techniques will be presented and characterization of the semiconductor materials as well as the charge transport simulations will be highlighted. Some potential topics include, but are not limited to:

Wide bandgap materials and devices;
Semiconductor devices applications;
Synthesis, controllable growth and influence of the processing steps in the electrical properties;
Characterization of the structural, electronic and optical properties;
Theory and modelling of the charge transport phenomena;
Implementation of 1D and 2D semiconductor configurations;

Prof. Dr. Joana Dória Vaz Pinto
Guest Editor

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Published Papers (4 papers)

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10 pages, 1129 KiB

Open AccessArticle

Femtosecond Pump Probe Reflectivity Spectra in CdTe and GaAs Crystals at Room Temperature

by Hao Sun, Hong Ma and Jiancai Leng

Materials 2020, 13(1), 242; https://doi.org/10.3390/ma13010242 - 6 Jan 2020

Cited by 2 | Viewed by 3449

Abstract

Ultrafast pump probe reflectivity (PPR) signal near band edge is modeled by taking into account band filling (BF) and band gap renormalization (BGR) effects with the carrier density of ~10¹⁷/cm³ in GaAs crystal at room temperature. The calculated results indicate that the transient reflectivity ΔR/R is determined by BF and BGR effects. The most interesting feature is that ΔR/R signal experiences a sign change from photo-bleaching (PB) to photo-absorption (PA) due to the competition between BF and BGR effects. We experimentally measured ΔR as a function of photon energy across band edge with carrier density of ~10¹⁷/cm³ in GaAs and CdTe crystals, which has a similar trend as that calculated according to our model. In addition, the reflectivity is very sensitive to electron spin orientation, which is well confirmed by the corresponding experiments with 100 fs pump probe reflectivity spectroscopy in bulk CdTe. Our research in this work provides a method to study optoelectronic properties of conventional semiconductors at moderate carrier density excited by ultrafast laser pulse. Importantly, this model can be used for other novel semiconductor materials beyond GaAs and will provide new insights into the underlying spin dependent photophysics properties for new materials. Full article

(This article belongs to the Special Issue Advanced Semiconductors for Photonics and Electronics)

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13 pages, 2970 KiB

Open AccessArticle

Pressure Effect of the Vibrational and Thermodynamic Properties of Chalcopyrite-Type Compound AgGaS₂: A First-Principles Investigation

by Jianhui Yang, Qiang Fan, You Yu and Weibin Zhang

Materials 2018, 11(12), 2370; https://doi.org/10.3390/ma11122370 - 26 Nov 2018

Cited by 9 | Viewed by 3229

Abstract

To explore the structural, vibrational, and thermodynamic properties of the chalcopyrite-type compound AgGaS₂ under pressure, we applied hydrostatic pressure to the relaxed compound based on the first principles calculation and quasi-harmonic approximation. The structural parameters, including lattice constants and bond lengths decrease monotonically with the increasing pressure. The phonon dispersion curves under various pressures reveal the structural phase transition of chalcopyrite-type compound AgGaS₂ at about 4 GPa. The intrinsic mechanism of thermal conductivity for the chalcopyrite-type compound AgGaS₂ has been shown with phonon anharmonicity. The frequencies of the optical phonons at the center point Γ of the first Brillouin zone were calculated with the longitudinal optical–transverse optical (LO–TO) splitting mode. The dependence of the frequencies of the optical phonons on the pressure provides the information for the Raman spectroscopic study under high pressure. The pressure dependence of the Grüneisen parameters indicates that the instability of chalcopyrite-type compound AgGaS₂ is associated with the softening of the acoustic phonon modes at around the center point Γ. The thermal conductivity for chalcopyrite-type compound AgGaS₂ could be reduced by applying external pressure. The various thermodynamic properties, such as the Helmholtz free energy, entropy, and heat capacity, at different temperatures and pressures were discussed and analyzed based on the phonon properties. Full article

(This article belongs to the Special Issue Advanced Semiconductors for Photonics and Electronics)

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20 pages, 3692 KiB

Open AccessArticle

Effects of Pyrazine Derivatives and Substituted Positions on the Photoelectric Properties and Electromemory Performance of D–A–D Series Compounds

by Xuejing Song, Lingqian Kong, Hongmei Du, Xiangyu Li, Hanlin Feng, Jinsheng Zhao and Yu Xie

Materials 2018, 11(10), 2063; https://doi.org/10.3390/ma11102063 - 22 Oct 2018

Cited by 10 | Viewed by 3898

Abstract

Pyrazine derivatives quinoxaline and pyridopyrazine were selected as the acceptors, and benzocarbazole was used as the donor to synthesize four different D–A–D compounds. The results showed that 2,3-bis(decyloxy)pyridine[3,4-b]pyrazine (DPP) exhibited stronger electron-withdrawing ability than that of 2,3-bis(decyloxy)quinoxaline (DPx), because DPP possesses one more nitrogen (N) atom, resulting in a red-shift of the intramolecular charge transfer (ICT) absorption bands and fluorescent emission spectra for compounds with DPP as the acceptor compared with those that use DPx as the acceptor. The band-gap energy (Eg) of the four D–A–D compounds were 2.82 eV, 2.70 eV, 2.48 eV, and 2.62 eV, respectively, for BPC-2DPx, BPC-3DPx, BPC-2DPP, and BPC-3DPP. The solvatochromic effect was insignificant when the four compounds were in the ground state, which became significant in an excited state. With increasing solvent polarity, a 30–43 nm red shift was observed in the emissive spectra of the compounds. The thermal decomposition temperatures of the four compounds between 436 and 453 °C had very high thermal stability. Resistor-type memory devices based on BPC-2DPx and BPC-2DPP were fabricated in a simple sandwich configuration, Al/BPC-2DPx/ITO or Al/BPC-2DPP/ITO. The two devices showed a binary non-volatile flash memory, with lower threshold voltages and better repeatability. Full article

(This article belongs to the Special Issue Advanced Semiconductors for Photonics and Electronics)

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12 pages, 2241 KiB

Open AccessArticle

Temperature-Dependent and Threshold Behavior of Sm³⁺ Ions on Fluorescence Properties of Lithium Niobate Single Crystals

by Mingming Yang, Siwei Long, Xin Yang, Shaopeng Lin, Yunzhong Zhu, Decai Ma and Biao Wang

Materials 2018, 11(10), 2058; https://doi.org/10.3390/ma11102058 - 22 Oct 2018

Cited by 8 | Viewed by 2989

Abstract

Temperature-dependent and threshold behavior of Sm³⁺ ions on fluorescence properties of lithium niobate (LiNbO₃, LN) single crystals were systematically investigated. The test materials, congruent LiNbO₃ single crystals (Sm:LN), with various concentrations of doped Sm³⁺ ions from 0.2 to 2.0 mol.%, were grown using the Czochralski technique. Absorption spectra were obtained at room temperature, and photoluminescence spectra were measured at various temperatures in the range from 73 K to 423 K. Judd–Ofelt theory was applied to calculate the intensity parameters Ω_t (t = 2, 4, 6) for 1.0 mol.% Sm³⁺-doped LiNbO₃, as well as the radiative transition rate, A_r, branching ratio, β, and radiative lifetime, τ_r, of the fluorescent ⁴G_5/2 level. Under 409 nm laser excitation, the photoluminescence spectra of the visible fluorescence of Sm³⁺ mainly contains 568, 610, and 651 nm emission spectra, corresponding to the energy level transitions of ⁴G_5/2→⁶H_5/2, ⁴G_5/2→⁶H_7/2, and ⁴G_5/2→⁶H_9/2, respectively. The concentration of Sm³⁺ ions has great impact on the fluorescence intensity. The luminescence intensity of Sm (1.0 mol.%):LN is about ten times as against Sm (0.2 mol.%):LN at 610 nm. The intensity of the fluorescence spectra were found to be highly depend on temperature, as well as the concentration of Sm³⁺ ions in LiNbO₃ single crystals, as predicted; however, the lifetime changed little with the temperature, indicating that the temperature has little effect on it, in Sm:LN single crystals. Sm:LN single crystals, with orange-red emission spectra, can be used as the active material in new light sources, fluorescent display devices, UV-sensors, and visible lasers. Full article

(This article belongs to the Special Issue Advanced Semiconductors for Photonics and Electronics)

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