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Materials
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Theory and Modeling of Plasmonic Nanostructures
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Theory and Modeling of Plasmonic Nanostructures

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (30 June 2020) | Viewed by 2705

Special Issue Editor

Assoc. Prof. Jason M. Montgomery

E-Mail Website
Guest Editor
Department of Chemistry, Biochemistry, and Physics, Florida Southern College, Lakeland, FL 33801, USA
Interests: surface plasmon resonance; surface enhanced Raman spectroscopy; finite-difference time-domain

Special Issue Information

Dear Colleagues,

The study of plasmonic nanostructures dates back to the 1850s, with Faraday’s investigations of the optical properties of colloidal gold nanoparticle solutions. Today, it is well understood that the excitation of surface plasmons, or collective oscillations of conducting electrons at the surface of a metal, can lead to unique optical properties, including enhanced absorption and scattering and the sub-wavelength confinement and propagation of electromagnetic energy. Despite their long history, plasmonic nanostructures continue to be of considerable interest, especially in recent decades as significant advances in synthesis and nanolithography techniques and characterization methods permit nanostructures with precise shapes and sizes and tunable optical properties.

The advent of modern high-performance computing has enabled the fundamental study of the optical properties of plasmonic nanostructures with arbitrary shapes and material composition with high spatial and temporal resolution. Classical electrodynamics methods, such as Mie theory, discrete dipole approximation (DDA), finite-difference time-domain (FDTD), finite element methods (FEM), etc., which solve Maxwell’s equations for electromagnetic field components and employ bulk dielectric constants to model dispersive metals, can be highly accurate for nanostructures with features larger than the mean free path of the electron. Advances in electronic structure methods, such as time-dependent density functional theory (TD-DFT) or hybrid quantum mechanics/molecular mechanics methods (QM/MM), now provide a way to study electronic transitions and transport in nanometer and sub-nanometer metallic clusters from first principles.

This Special Issue aims to feature recent progress in, and the impact of, the theoretical and computational modeling of plasmonic nanostructures for applications in catalysis, optoelectronics, photovoltaics, chemical and biological sensing, spectroscopy, nonlinear optics, metamaterials, medical imaging and therapeutics, etc. We invite full papers, communications and reviews related to one or several of the topics included in the keywords below.

Assoc. Prof. Jason M. Montgomery
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Theory and modeling
  • Surface plasmon resonance
  • Plasmonics
  • Computational electrodynamics (e.g. FDTD, FEM, DDA)
  • Electronic structure of metallic nanoparticles (e.g. TDDFT)
  • Photocatalysis
  • Optoelectronics
  • Photovoltaics
  • Surface enhanced spectroscopies (e.g. SERS, SEIRA, TERS)
  • Chemical and biological sensing
  • Medical imaging and therapeutics
  • Novel plasmonic materials (e.g. metamaterials, graphene)

Published Papers (1 paper)

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Research

14 pages, 2215 KiB  
Article
A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions
by Mohsen Janipour, I. Burc Misirlioglu and Kursat Sendur
Materials 2019, 12(15), 2412; https://doi.org/10.3390/ma12152412 - 29 Jul 2019
Cited by 2 | Viewed by 2334
Abstract
Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homogeneous [...] Read more.
Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homogeneous dielectric function is valid. Penetration of the electric fields into semiconductors induces locally varying charge densities and a spatially varying dielectric function is expected. While such an occurrence renders tunable THz plasmonics a possibility, it is crucial to understand the conditions under which propagating resonant conditions for the carriers occur, upon incidence of an electromagnetic radiation. In this manuscript, we derive a dispersion relation for a p–n heterojunction and apply the methodology to a GaAs p–n junction, a material of interest for optoelectronic devices. Considering symmetrically doped p- and n-type regions with equal width, the effect of certain parameters (such as doping and voltage bias) on the dispersion curve of the p–n heterojunction were investigated. Keeping in sight the different effective masses and mobilities of the carriers, we were able to obtain the conditions that yield identical dielectric functions for the p- and n-regions. Our results indicated that the p–n GaAs system can sustain propagating resonances and can be used as a layered plasmonic waveguide. The conditions under which this is feasible fall in the frequency region between the transverse optical phonon resonance of GaAs and the traditional cut-off frequency of the diode waveguide. In addition, our results indicated when the excitation was slightly above the phonon resonance frequency, the plasmon propagation attained low-loss characteristics. We also showed that the existence or nonexistence of the depletion zone between the p- and n- interfaces allowed certain plasmon modes to propagate, while others decayed rapidly, pointing out the possibility for a design of selective filters. Full article
(This article belongs to the Special Issue Theory and Modeling of Plasmonic Nanostructures)
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