The Fabrication of Compact and Porous Semiconductor Metal Oxide Layers
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Porous Materials".
Deadline for manuscript submissions: closed (29 February 2020) | Viewed by 6131
Special Issue Editor
Special Issue Information
Dear Colleagues,
At present, semiconductor metal oxides are used in a great variety of commercially available technologies. Thin layers of these materials can now be manufactured at small and large scale to produce self-cleaning surfaces, electrodes for energy systems (photovoltaics, hydrogen generation, batteries, etc.), smart colour-changing windows, electronics, gas sensors, and environmental monitoring, and for many other applications. The fabrication of compact semiconductor metal oxide films tends to rely on techniques such as chemical or physical vapour deposition, atomic layer deposition, wet chemical methods (dip/spin/slot-die coating, electrochemical deposition, spray pyrolysis, ink-jet printing, etc.). Many of these have been succesfully transfered from laboratories to manufacturing plants; however, there is still a great need for continuing the development of these routes to lower our global mass manufacturing carbon foot print and make advanced technologies available to a wider community. Porous semiconductor metal oxide layers, especially micro- and mesoporous materials, offer large specific surface areas, a key property for the successful development of efficient technologies in application fields, such as water purification, energy generation, and storage, or carbon capture and utilisation. However, their use in commercial products is still extremely limited, owing to the many difficulties associated with scaling up their fabrication whilst preserving their uniform structural properties, their durability, and recycling.
In this issue, we aim to capture some of the latest advances in the development of environmentally friendly deposition methods and materials for the fabrication of semiconductor metal oxide compact and porous layers.
Dr. Cecile Charbonneau
Guest Editor
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Keywords
- semiconductor metal oxide layers
- fabrication
- low carbon
