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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: closed (20 October 2022) | Viewed by 7230

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Dr. Yonghun Kim

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Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Korea
Interests: emerging two-dimensional nanomaterials; semiconductor integrated process; neuromorphic synapse; advanced electrical characterization
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Prof. Dr. Byungjin Cho

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Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju 28644, Chungbuk, Republic of Korea
Interests: 2D based electronics and photonics
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Special Issue Information

Dear Colleagues,

We invite you to submit original researh papers to this Special Issue for the journal Materials entitled “Synthesis and Characterization of Emerging Two-Dimensional Nanomaterials”.

In recent decades, atomically thin layered two-dimensional (2D) nanomaterials have attracted much attention in the research and development societies due to their extraordinary mechanical, optical, electical, and physical properties. Two-dimensional nanomaterials contain graphene, transition metal dichalcogenides (MoS₂, WS₂, etc.), nitrides (GaN, BN, and Ca₂N), Mxene (Ti₃C₂, Ta₄C₃, etc.), and Xene (B, Si, Ge, and Sn). For the broad range of various device applications, diverse synthesis methods such as mechanical exfoliaitons, chemical vaport depositions, physical vapor depositions, and other hybrid methods have been reported to date. Furthermore, physical and electrical characterization methods could also be important research areas in order to precisely design and realize funtional properties in nanometer-scaled material systems.

The aim of this Special Issue is to highlight the recent significant research results related with 2D nanomaterial design and synthesis, innovative material property and characterization, and diverse electronic device applications. Your contributions are always welcome.

Dr. Yonghun Kim
Prof. Dr. Byungjin Cho
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

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Keywords

2D nanomaterials
graphene
synthesis
characterizaitons
electronic devices
physical and electrical properties
design and simulations

Published Papers (4 papers)

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Research

9 pages, 2360 KiB

Open AccessArticle

Temperature-Dependent Absorption of Ternary HfS_2−xSe_x 2D Layered Semiconductors

by Der-Yuh Lin, Hung-Pin Hsu, Cheng-Wen Wang, Shang-Wei Chen, Yu-Tai Shih, Sheng-Beng Hwang and Piotr Sitarek

Materials 2022, 15(18), 6304; https://doi.org/10.3390/ma15186304 - 11 Sep 2022

Cited by 1 | Viewed by 1078

Abstract

In this study, we present the investigation of optical properties on a series of HfS_2−xSe_x crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20–300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS_2−xSe_x were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed. Full article

(This article belongs to the Special Issue Synthesis and Characterization of Emerging Two-Dimensional Nanomaterials)

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14 pages, 10571 KiB

Open AccessArticle

Shell-Isolated Nanoparticle-Enhanced Raman Spectroscopy for Probing Riboflavin on Graphene

by Agnė Zdaniauskienė, Ilja Ignatjev, Tatjana Charkova, Martynas Talaikis, Algimantas Lukša, Arūnas Šetkus and Gediminas Niaura

Materials 2022, 15(5), 1636; https://doi.org/10.3390/ma15051636 - 22 Feb 2022

Cited by 5 | Viewed by 1670

Abstract

Graphene research and technology development requires to reveal adsorption processes and understand how the defects change the physicochemical properties of the graphene-based systems. In this study, shell-isolated nanoparticle-enhanced Raman spectroscopy (SHINERS) and graphene-enhanced Raman spectroscopy (GERS) coupled with density functional theory (DFT) modeling were applied for probing the structure of riboflavin adsorbed on single-layer graphene substrate grown on copper. Intense and detailed vibrational signatures of the adsorbed riboflavin were revealed by SHINERS method. Based on DFT modeling and detected downshift of prominent riboflavin band at 1349 cm⁻¹ comparing with the solution Raman spectrum, π-stacking interaction between the adsorbate and graphene was confirmed. Different spectral patterns from graphene-riboflavin surface were revealed by SHINERS and GERS techniques. Contrary to GERS method, SHINERS spectra revealed not only ring stretching bands but also vibrational features associated with ribityl group of riboflavin and D-band of graphene. Based on DFT modeling it was suggested that activation of D-band took place due to riboflavin induced tilt and distortion of graphene plane. The ability to explore local perturbations by the SHINERS method was highlighted. We demonstrated that SHINERS spectroscopy has a great potential to probe adsorbed molecules at graphene. Full article

(This article belongs to the Special Issue Synthesis and Characterization of Emerging Two-Dimensional Nanomaterials)

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9 pages, 2049 KiB

Open AccessArticle

Statistical Analysis of Uniform Switching Characteristics of Ta₂O₅-Based Memristors by Embedding In-Situ Grown 2D-MoS₂ Buffer Layers

by Soeun Jin, Jung-Dae Kwon and Yonghun Kim

Materials 2021, 14(21), 6275; https://doi.org/10.3390/ma14216275 - 21 Oct 2021

Cited by 6 | Viewed by 1852

Abstract

A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-dimensional (2D) materials are being widely studied for implementation in the development of new information-processing electronic devices. However, inherent drawbacks concerning operational uniformities, such as device-to-device variability, device yield, and reliability, are huge challenges in the realization of concrete memristor hardware devices. In this study, we fabricated Ta₂O₅-based memristor devices, where a 2D-MoS₂ buffer layer was directly inserted between the Ta₂O₅ switching layer and the Ag metal electrode to improve uniform switching characteristics in terms of switching voltage, the distribution of resistance states, endurance, and retention. A 2D-MoS₂ layered buffer film with a 5 nm thickness was directly grown on the Ta₂O₅ switching layer by the atomic-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) method, which is highly uniform and provided a superior yield of 2D-MoS₂ film. It was observed that the switching operation was dramatically stabilized via the introduction of the 2D-MoS₂ buffer layer compared to a pristine device without the buffer layer. It was assumed that the difference in mobility and reduction rates between Ta₂O₅ and MoS₂ caused the narrow localization of ion migration, inducing the formation of more stable conduction filament. In addition, an excellent yield of 98% was confirmed while showing cell-to-cell operation uniformity, and the extrinsic and intrinsic variabilities in operating the device were highly uniform. Thus, the introduction of a MoS₂ buffer layer could improve highly reliable memristor device switching operation. Full article

(This article belongs to the Special Issue Synthesis and Characterization of Emerging Two-Dimensional Nanomaterials)

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8 pages, 2637 KiB

Open AccessArticle

Enhanced NO₂ Sensing Performance of Graphene with Thermally Induced Defects

by Namsoo Lim, Hyeonghun Kim, Yusin Pak and Young Tae Byun

Materials 2021, 14(9), 2347; https://doi.org/10.3390/ma14092347 - 30 Apr 2021

Cited by 7 | Viewed by 1711

Abstract

This paper demonstrates the enhanced NO₂ sensing performance of graphene with defects generated by rapid thermal annealing (RTA). A high temperature of RTA (300–700 °C) was applied to graphene under an argon atmosphere to form defects on sp² carbon lattices. The density of defects proportionally increased with increasing the RTA temperature. Raman scattering results confirmed significant changes in sp² bonding. After 700 °C RTA, I_D/I_G, I_2D/I_G, and FWHM (full width at half maximum)(G) values, which are used to indirectly investigate carbon-carbon bonds’ chemical and physical properties, were markedly changed compared to the pristine graphene. Further evidence of the thermally-induced defects on graphene was found via electrical resistance measurements. The electrical resistance of the RTA-treated graphene linearly increased with increasing RTA temperature. Meanwhile, the NO₂ response of graphene sensors increased from 0 to 500 °C and reached maximum (R = ~24%) at 500 °C. Then, the response rather decreased at 700 °C (R = ~14%). The results imply that rich defects formed at above a critical temperature (~500 °C) may damage electrical paths of sp² chains and thus deteriorate NO₂ response. Compared to the existing functionalization process, the RTA treatment is very facile and allows precise control of the NO₂ sensing characteristics, contributing to manufacturing commercial low-cost, high-performance, integrated sensors. Full article

(This article belongs to the Special Issue Synthesis and Characterization of Emerging Two-Dimensional Nanomaterials)

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