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1830 KiB

Open AccessArticle

Fabrication of p-Type ZnO:N Films by Oxidizing Zn₃N₂ Films in Oxygen Plasma at Low Temperature

by Yuping Jin, Nuannuan Zhang and Bin Zhang

Materials 2017, 10(3), 236; https://doi.org/10.3390/ma10030236 - 27 Feb 2017

Cited by 11 | Viewed by 4829

The oxygen vacancy (V_O) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn₃N₂ films in oxygen plasma and successfully [...] Read more.

The oxygen vacancy (V_O) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn₃N₂ films in oxygen plasma and successfully prepared p-type ZnO:N films at temperatures ranging from room temperature to 300 °C. The films were characterized by X-ray diffraction (XRD), non-Rutherford backscattering (non-RBS) spectroscopy, X-ray photoelectron spectroscopy, photoluminescence spectrum, and Hall Effect. The results show that the nitrogen atoms successfully substitute the oxygen sites in the ZnO:N films. The film prepared at room temperature exhibits the highest hole concentration of 6.22 × 10¹⁸ cm⁻³, and the lowest resistivity of 39.47 Ω∙cm. In all ZnO:N films, the V_O defects are reduced significantly. At 200 °C, the film holds the lowest value of V_O defects and the strongest UV emission. These results imply that oxygen plasma is very efficient in reducing V_O defects in p-type ZnO:N films, and could greatly reduce the reaction temperature. This method is significant for the development of ZnO-based optoelectronic devices. Full article

(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)

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2146 KiB

Open AccessArticle

Role of Hydrogen Bonding in the Formation of Adenine Chains on Cu(110) Surfaces

by Lanxia Cheng

Materials 2016, 9(12), 1016; https://doi.org/10.3390/ma9121016 - 16 Dec 2016

Cited by 5 | Viewed by 4465

Abstract

Understanding the adsorption properties of DNA bases on metal surfaces is fundamental for the rational control of surface functionalization leading to the realisation of biocompatible devices for biosensing applications, such as monitoring of particular parameters within bio-organic environments and drug delivery. In this [...] Read more.

Understanding the adsorption properties of DNA bases on metal surfaces is fundamental for the rational control of surface functionalization leading to the realisation of biocompatible devices for biosensing applications, such as monitoring of particular parameters within bio-organic environments and drug delivery. In this study, the effects of deposition rate and substrate temperature on the adsorption behavior of adenine on Cu(110) surfaces have been investigated using scanning tunneling microscopy (STM) and density functional theory (DFT) modeling, with a focus on the characterization of the morphology of the adsorbed layers. STM results revealed the formation of one-dimensional linear chains and ladder-like chains parallel to the [110] direction, when dosing at a low deposition rate at room temperature, followed by annealing to 490 K. Two mirror related, well-ordered chiral domains oriented at ±55° with respect to the [110] direction are formed upon deposition on a substrate kept at 490 K. The molecular structures observed via STM are rationalized and qualitatively described on the basis of the DFT modeling. The observation of a variety of ad-layer structures influenced by deposition rate and substrate temperature indicates that dynamic processes and hydrogen bonding play an important role in the self-assembly of adenine on the Cu(110) surface. Full article

(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)

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12959 KiB

Open AccessArticle

Efficient Solar-Induced Photoelectrochemical Response Using Coupling Semiconductor TiO₂-ZnO Nanorod Film

by Nur Azimah Abd Samad, Chin Wei Lai, Kung Shiuh Lau and Sharifah Bee Abd Hamid

Materials 2016, 9(11), 937; https://doi.org/10.3390/ma9110937 - 22 Nov 2016

Cited by 14 | Viewed by 6404

Abstract

Efficient solar driven photoelectrochemical (PEC) response by enhancing charge separation has attracted great interest in the hydrogen generation application. The formation of one-dimensional ZnO nanorod structure without bundling is essential for high efficiency in PEC response. In this present research work, ZnO nanorod [...] Read more.

Efficient solar driven photoelectrochemical (PEC) response by enhancing charge separation has attracted great interest in the hydrogen generation application. The formation of one-dimensional ZnO nanorod structure without bundling is essential for high efficiency in PEC response. In this present research work, ZnO nanorod with an average 500 nm in length and average diameter of about 75 nm was successfully formed via electrodeposition method in 0.05 mM ZnCl₂ and 0.1 M KCl electrolyte at 1 V for 60 min under 70 °C condition. Continuous efforts have been exerted to further improve the solar driven PEC response by incorporating an optimum content of TiO₂ into ZnO nanorod using dip-coating technique. It was found that 0.25 at % of TiO₂ loaded on ZnO nanorod film demonstrated a maximum photocurrent density of 19.78 mA/cm² (with V vs. Ag/AgCl) under UV illumination and 14.75 mA/cm² (with V vs. Ag/AgCl) under solar illumination with photoconversion efficiency ~2.9% (UV illumination) and ~4.3% (solar illumination). This performance was approximately 3–4 times higher than ZnO film itself. An enhancement of photocurrent density and photoconversion efficiency occurred due to the sufficient Ti element within TiO₂-ZnO nanorod film, which acted as an effective mediator to trap the photo-induced electrons and minimize the recombination of charge carriers. Besides, phenomenon of charge-separation effect at type-II band alignment of Zn and Ti could further enhance the charge carrier transportation during illumination. Full article

(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)

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2555 KiB

Open AccessArticle

Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO₂ as a Gate Dielectric

by Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, Kuan-Wei Lee and Yeong-Her Wang

Materials 2016, 9(11), 861; https://doi.org/10.3390/ma9110861 - 25 Oct 2016

Cited by 1 | Viewed by 4999

Abstract

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after [...] Read more.

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fill dangling bonds and therefore release interface trapped charges. Compared with a benchmark PHEMT, the AlGaAs/InGaAs MOS-PHEMT using LPD-TiO₂ exhibited larger gate bias operation, higher breakdown voltage, suppressed subthreshold characteristics, and reduced flicker noise. As a result, the device with proposed process and using LPD-TiO₂ as a gate dielectric is promising for high-speed applications that demand little noise at low frequencies. Full article

(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)

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4725 KiB

Open AccessArticle

Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

by Bin Peng, Dongdong Gong, Wanli Zhang, Jianying Jiang, Lin Shu and Yahui Zhang

Materials 2016, 9(8), 686; https://doi.org/10.3390/ma9080686 - 10 Aug 2016

Cited by 13 | Viewed by 5211

Abstract

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare [...] Read more.

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N₂/Ar flow rate and sputtering pressure on the microstructure of the AlN thin films were systematically investigated. The results show that the dependency of the full width at half maximum (FWHM) of AlN/Y₂O₃/Hastelloy on the sputtering parameters is similar to that of AlN/Si (100). The FWHM of the AlN (002) peak of the prepared AlN films decreases with increasing sputtering power. The FWHM decreases with the increase of the N₂/Ar flow rate or sputtering pressure, and increases with the further increase of the N₂/Ar flow rate or sputtering pressure. The FWHM of the AlN/Y₂O₃/Hastelloy prepared under optimized parameters is only 3.7° and its root mean square (RMS) roughness is 5.46 nm. Based on the experimental results, the growth mechanism of AlN thin films prepared by the two-step deposition process was explored. This work would assist us in understanding the AlN film’s growth mechanism of the two-step deposition process, preparing highly c-axis–oriented AlN films on flexible metal tapes and developing flexible surface acoustic wave (SAW) sensors from an application perspective. Full article

(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)

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1305 KiB

Open AccessArticle

Spectroscopic Study of Plasma Polymerized a-C:H Films Deposited by a Dielectric Barrier Discharge

by Thejaswini Halethimmanahally Chandrashekaraiah, Robert Bogdanowicz, Eckart Rühl, Vladimir Danilov, Jürgen Meichsner, Steffen Thierbach and Rainer Hippler

Materials 2016, 9(7), 594; https://doi.org/10.3390/ma9070594 - 19 Jul 2016

Cited by 10 | Viewed by 5892

Abstract

Plasma polymerized a-C:H thin films have been deposited on Si (100) and aluminum coated glass substrates by a dielectric barrier discharge (DBD) operated at medium pressure using C₂H_m/Ar (m = 2, 4, 6) gas mixtures. The deposited films [...] Read more.

Plasma polymerized a-C:H thin films have been deposited on Si (100) and aluminum coated glass substrates by a dielectric barrier discharge (DBD) operated at medium pressure using C₂H_m/Ar (m = 2, 4, 6) gas mixtures. The deposited films were characterized by Fourier transform infrared reflection absorption spectroscopy (FT-IRRAS), Raman spectroscopy, and ellipsometry. FT-IRRAS revealed the presence of sp³ and sp² C–H stretching and C–H bending vibrations of bonds in the films. The presence of D and G bands was confirmed by Raman spectroscopy. Thin films obtained from C₂H₄/Ar and C₂H₆/Ar gas mixtures have I_D/I_G ratios of 0.45 and 0.3, respectively. The refractive indices were 2.8 and 3.1 for C₂H₄/Ar and C₂H₆/Ar films, respectively, at a photon energy of 2 eV. Full article

(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)

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Review

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2252 KiB

Open AccessReview

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

by Xin Meng, Young-Chul Byun, Harrison S. Kim, Joy S. Lee, Antonio T. Lucero, Lanxia Cheng and Jiyoung Kim

Materials 2016, 9(12), 1007; https://doi.org/10.3390/ma9121007 - 12 Dec 2016

Cited by 95 | Viewed by 21960

Abstract

With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiN_x) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. [...] Read more.

With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiN_x) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiN_x ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiN_x thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiN_x ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiN_x ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiN_x ALD technique. Full article

(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)

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1089 KiB

Open AccessReview

Coating Methods for Surface Modification of Ammonium Nitrate: A Mini-Review

by Baha I. Elzaki and Yue Jun Zhang

Materials 2016, 9(7), 502; https://doi.org/10.3390/ma9070502 - 23 Jun 2016

Cited by 20 | Viewed by 6925

Abstract

Using ammonium nitrate (AN) as a propellant oxidizer is limited due to its hygroscopicity. This review consolidated the available information of various issues pertaining to the coating methods of the surface modification of ammonium nitrate for reducing its hygroscopicity. Moreover this review summarizes [...] Read more.

Using ammonium nitrate (AN) as a propellant oxidizer is limited due to its hygroscopicity. This review consolidated the available information of various issues pertaining to the coating methods of the surface modification of ammonium nitrate for reducing its hygroscopicity. Moreover this review summarizes the recent advances and issues involved in ammonium nitrate surface modification by physical, chemical and encapsulation coating methods to reduce the hygroscopicity. Furthermore, coating materials, process conditions, and the hygroscopicity test conditions are extensively discussed along, with summaries of the advantages and disadvantages of each coating method. Our findings indicated that the investigation and development of anti-hygroscopicity of AN, and the mechanisms of surface modification by coating urgently require further research in order to further reduce the hygroscopicity. Therefore, this review is useful to researchers concerned with the improvement of ammonium salts’ anti-hygroscopicity. Full article

(This article belongs to the Special Issue Thin-Film Deposition, Characterization and Advanced Surface Engineering)

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