Wide-Bandgap Semiconductor Devices: Materials, Fabrication, and Applications
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".
Deadline for manuscript submissions: 31 December 2024 | Viewed by 45
Special Issue Editors
Interests: GaN heterostructure; transition metal nitride electronic devices; GaN electronic devices
Interests: power semiconductor device; device reliability; power module package
Interests: power semiconductor devices; wide-bandgap semiconductor devices; semiconductor device fabrication; semiconductor device reliability
Special Issue Information
Dear Colleagues,
Semiconductor devices play a pivotal role in modern electronics, facilitating the advancement of increasingly intricate and compact electronic systems. These systems are now ubiquitous across every facet of contemporary information society. In order to cater to diverse application requirements, modern semiconductor devices utilize a variety of materials, such as silicon (Si), gallium arsenide (GaAs), germanium (Ge), silicon carbide (SiC), and diamond. Moreover, there is a continual escalation in integration levels, accompanied by a corresponding increase in the complexity of fabrication processes. The principal factors shaping the trajectory of modern semiconductor device development include the intended application domains, the selection of materials for device fabrication, and the meticulous engineering of fabrication processes.
This Special Issue aims to provide a comprehensive overview of the latest advancements in emerging semiconductor devices, with a particular focus on the materials utilized, fabrication techniques employed, and the wide range of applications that these devices enable. Researchers and academics are invited to contribute original research papers and review articles that showcase innovative approaches and breakthroughs in the field of semiconductor devices, helping to pave the way for the next generation of electronic technologies.
Prof. Dr. Junshuai Xue
Dr. Xi Jiang
Dr. Song Yuan
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- wide-bandgap semiconductor materials and devices
- power semiconductor devices
- semiconductor performance characterization
- power electronics
- semiconductor device fabrication
- semiconductor device reliability
