GaN-Based Materials and Devices: Research and Applications

Dear Colleagues,

Wurtzite III-nitrides semiconductor materials, represented by GaN, have been widely used in high-frequency, high-power, and optoelectronic devices due to their excellent electrical and optical properties. For example, their superior electron mobility and wide bandgap make them highly promising candidates for high-frequency and high-power electronic devices. Furthermore, their direct and tunable bandgap have made them attractive for various optoelectronic applications, such as light-emitting diodes (LEDs), laser diodes (LDs), sensors, and photovoltaic cells. Yet the potential of GaN-based devices is still far from being fully developed. The challenges exist in many aspects, such as the poor material quality, unstable fabrication process, and thermal management. Therefore, by leveraging the intriguing properties of (Al,In)GaN compound semiconductors, researchers and engineers may develop devices with improved performance, benefiting various aspects of our daily lives.  

The Special Issue "GaN-based Materials and Devices: Research and Applications" of the Journal Micromachines aims to present recent advantages in the design, growth, fabrication, characterization, and simulation of GaN-based compound semiconductors, as well as their related electronic and optoelectronic devices. The scope of this Special Issue includes, but is not limited to:

• Epitaxial growth, fabrication, and characterization techniques for state-of-the-art AlInGaN alloys and their semiconductor heterostructures;
• Research on the physical, chemical, electronic, and optical properties of GaN-based materials and devices for various applications;
• Novel concepts for device structure design;
• Advanced simulation or modeling for GaN-based electronic and optoelectronic devices.

We look forward to receiving your submissions to this Special Issue!

Dr. Wei Liu
Dr. Kun Wang
Guest Editors

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