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Nanomaterials
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Semiconductor Nanomaterials for Optoelectronic Applications
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Semiconductor Nanomaterials for Optoelectronic Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 10 July 2024 | Viewed by 6593

Special Issue Editor

Prof. Dr. Ikai Lo

E-Mail Website
Guest Editor
Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Interests: semiconductor physics; molecular beam epitaxy; compound semiconductors; condensed matter physics; nanotechnology

Special Issue Information

Dear Colleagues, 

In the past decades, nanotechnology has been applied to reduce the size or dimension of optoelectronic devices in which the quantum confinement of electron and hole carriers will practically optimize energy consumption. In this new trend of sustainable optoelectronic applications, high-quality semiconductor nanomaterials are convincing candidates for the fabrication of nanometer-sized optoelectronic devices.  There are two methods of nanomaterial fabrication for nanodevices: the top-down and the bottom-up approach.  The top-down lithographed approach (e.g., by EUV, FIB, e-beam writer) is the favorite for the manufacturing process, but the bottom-up self-assembling approach (e.g., MOCVD, MBE) is more advantageous when it comes to sample growth of defect-free and homogenous chemical composition.  Both approaches benefit from the quantum effect of nanodevices derived from these semiconductor nanomaterials. 

Therefore, we cordially invite professors and researchers to submit original manuscripts or reviewed articles to this Special Issue, including but not limited to the topics of methodology, fabrication, characterization, and properties for optoelectronic nanodevice applications.

Prof. Dr. Ikai Lo
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanomaterials
  • nanotechnology
  • EUV
  • FIB
  • e-beam writer
  • MOCVD
  • MBE

Published Papers (5 papers)

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Research

11 pages, 4574 KiB  
Article
Single-Mode Control and Individual Nanoparticle Detection in the Ultraviolet Region Based on Boron Nitride Microdisk with Whispering Gallery Mode
by Jiaxing Li, Qiang Li, Ransheng Chen, Qifan Zhang, Wannian Fang, Kangkang Liu, Feng Li and Feng Yun
Nanomaterials 2024, 14(6), 501; https://doi.org/10.3390/nano14060501 - 11 Mar 2024
Viewed by 746
Abstract
Optical microcavities are known for their strongly enhanced light–matter interactions. Whispering gallery mode (WGM) microresonators have important applications in nonlinear optics, single-mode output, and biosensing. However, there are few studies on resonance modes in the ultraviolet spectrum because most materials with high absorption [...] Read more.
Optical microcavities are known for their strongly enhanced light–matter interactions. Whispering gallery mode (WGM) microresonators have important applications in nonlinear optics, single-mode output, and biosensing. However, there are few studies on resonance modes in the ultraviolet spectrum because most materials with high absorption properties are in the ultraviolet band. In this study, the performance of a microdisk cavity based on boron nitride (BN) was simulated by using the Finite-difference time-domain (FDTD) method. The WGM characteristics of a single BN microdisk with different sizes were obtained, wherein the resonance modes could be regulated from 270 nm to 350 nm; additionally, a single-mode at 301.5 nm is achieved by cascading multiple BN microdisk cavities. Moreover, we found that a BN microdisk with a diameter of 2 μm has a position-independent precise sensitivity for the nanoparticle of 140 nm. This study provides new ideas for optical microcavities to achieve single-mode management and novel coronavirus size screening, such as SARS-CoV-2, in the ultraviolet region. Full article
(This article belongs to the Special Issue Semiconductor Nanomaterials for Optoelectronic Applications)
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32 pages, 4987 KiB  
Article
Glassy-like Transients in Semiconductor Nanomaterials
by Isaac Balberg
Nanomaterials 2024, 14(5), 471; https://doi.org/10.3390/nano14050471 - 5 Mar 2024
Viewed by 739
Abstract
Glassy behavior is manifested by three time-dependent characteristics of a dynamic physical property. Such behaviors have been found in the electrical conductivity transients of various disordered systems, but the mechanisms that yield the glassy behavior are still under intensive debate. The focus of [...] Read more.
Glassy behavior is manifested by three time-dependent characteristics of a dynamic physical property. Such behaviors have been found in the electrical conductivity transients of various disordered systems, but the mechanisms that yield the glassy behavior are still under intensive debate. The focus of the present work is on the effect of the quantum confinement (QC) and the Coulomb blockade (CB) effects on the experimentally observed glassy-like behavior in semiconductor nanomaterials. Correspondingly, we studied the transient electrical currents in semiconductor systems that contain CdSe or Si nanosize crystallites, as a function of that size and the ambient temperature. In particular, in contrast to the more commonly studied post-excitation behavior in electronic glassy systems, we have also examined the current transients during the excitation. This has enabled us to show that the glassy behavior is a result of the nanosize nature of the studied systems and thus to conclude that the observed characteristics are sensitive to the above effects. Following this and the temperature dependence of the transients, we derived a more detailed macroscopic and microscopic understanding of the corresponding transport mechanisms and their glassy manifestations. We concluded that the observed electrical transients must be explained not only by the commonly suggested principle of the minimization of energy upon the approach to equilibrium, as in the mechanical (say, viscose) glass, but also by the principle of minimal energy dissipation by the electrical current which determines the percolation network of the electrical conductivity. We further suggest that the deep reason for the glassy-like behavior that is observed in the electrical transients of the nanomaterials studied is the close similarity between the localization range of electrons due to the Coulomb blockade and the caging range of the uncharged atomic-size particles in the classical mechanical glass. These considerations are expected to be useful for the understanding and planning of semiconductor nanodevices such as corresponding quantum dot memories and quantum well MOSFETs. Full article
(This article belongs to the Special Issue Semiconductor Nanomaterials for Optoelectronic Applications)
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11 pages, 2385 KiB  
Article
Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs
by Yu-Chung Lin, Ikai Lo, Cheng-Da Tsai, Ying-Chieh Wang, Hui-Chun Huang, Chu-An Li, Mitch M. C. Chou and Ting-Chang Chang
Nanomaterials 2023, 13(13), 1922; https://doi.org/10.3390/nano13131922 - 23 Jun 2023
Viewed by 1158
Abstract
Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-x [...] Read more.
Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InxGa1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InxGa1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications. Full article
(This article belongs to the Special Issue Semiconductor Nanomaterials for Optoelectronic Applications)
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15 pages, 5424 KiB  
Article
Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis
by Hao-Yu Hsieh, Ping-Wei Liou, Shaobo Yang, Wei-Cheng Chen, Li-Ping Liang, Yueh-Chi Lee and Chih-Chung (C. C.) Yang
Nanomaterials 2023, 13(10), 1617; https://doi.org/10.3390/nano13101617 - 11 May 2023
Viewed by 1395
Abstract
The high porosity of a GaN porous structure (PS) makes it mechanically semi-flexible and can shield against the stress from the thick growth template on an overgrown layer to control the lattice structure or composition within the overgrown layer. To understand this stress [...] Read more.
The high porosity of a GaN porous structure (PS) makes it mechanically semi-flexible and can shield against the stress from the thick growth template on an overgrown layer to control the lattice structure or composition within the overgrown layer. To understand this stress shield effect, we investigated the lattice constant variations among different growth layers in various samples of overgrown Al0.3Ga0.7N on GaN templates under different strain-relaxation conditions based on d-spacing crystal lattice analysis. The fabrication of a strain-damping PS in a GaN template shields against the stress from the thick GaN template on the GaN interlayer, which lies between the PS and the overgrown AlGaN layer, such that the stress counteraction of the AlGaN layer against the GaN interlayer can reduce the tensile strain in AlGaN and increase its critical thickness. If the GaN interlayer is thin, such that a strong AlGaN counteraction occurs, the increased critical thickness can become larger than the overgrown AlGaN thickness. In this situation, crack-free, thick AlGaN overgrowth is feasible. Full article
(This article belongs to the Special Issue Semiconductor Nanomaterials for Optoelectronic Applications)
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12 pages, 4626 KiB  
Article
Efficient Charge Transfer in MAPbI3 QDs/TiO2 Heterojunctions for High-Performance Solar Cells
by Hua Li, Chao Ding, Dong Liu, Shota Yajima, Kei Takahashi, Shuzi Hayase and Qing Shen
Nanomaterials 2023, 13(7), 1292; https://doi.org/10.3390/nano13071292 - 6 Apr 2023
Viewed by 2007
Abstract
Methylammonium lead iodide (MAPbI3) perovskite quantum dots (QDs) have become one of the most promising materials for optoelectronics. Understanding the dynamics of the charge transfer from MAPbI3 QDs to the charge transport layer (CTL) is critical for improving the performance [...] Read more.
Methylammonium lead iodide (MAPbI3) perovskite quantum dots (QDs) have become one of the most promising materials for optoelectronics. Understanding the dynamics of the charge transfer from MAPbI3 QDs to the charge transport layer (CTL) is critical for improving the performance of MAPbI3 QD photoelectronic devices. However, there is currently less consensus on this. In this study, we used an ultrafast transient absorption (TA) technique to investigate the dynamics of charge transfer from MAPbI3 QDs to CTL titanium dioxide (TiO2), elucidating the dependence of these kinetics on QD size with an injection rate from 1.6 × 1010 to 4.3 × 1010 s−1. A QD solar cell based on MAPbI3/TiO2 junctions with a high-power conversion efficiency (PCE) of 11.03% was fabricated, indicating its great potential for application in high-performance solar cells. Full article
(This article belongs to the Special Issue Semiconductor Nanomaterials for Optoelectronic Applications)
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