Graphene-Based Optoelectronic and Plasmonic Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (20 May 2024) | Viewed by 9271

Special Issue Editors


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Guest Editor
Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA
Interests: mid-infrared and THz optoelectronics and photonics; graphene and other 2D materials based devices and systems; strongly correlated electron materials; quantum optics; quantum cascade lasers; chemical and biological sensing

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Guest Editor
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260, USA
Interests: nanoelectronic, microelectric and optoelectronic devices and materials; transport and noise in heterostructures, thin films, quantum wells and quantum wires; simulation, design and testing of photodetectors, terahertz sensors and solar cells

Special Issue Information

Dear Colleagues,

In recent years, graphene has emerged as a versatile material for a broad range of device applications. In particular, the high carrier mobility, large carrier density and tunability are appealing material properties for optoelectronic devices, including photodetectors, optical modulators and high frequency generators. Graphene-based nanostructures can also support surface plasmon excitations with exceedingly high field confinement and enhancement in the mid-infrared to terahertz spectral region, which can lead to drastically enhanced light-matter interactions, benefiting various device applications. The capability to achieve tunable strong light-matter interactions also makes graphene plasmonic structures suitable for realizing high-performance sensors and tunable metamaterials/metasurfaces. The 2D nature of graphene and the straightforward transfer process make graphene compatible with a wide range of materials in nanofabrication processes. Therefore, graphene-based structures and devices can be integrated on different technology platforms, such as silicon photonics and III-V semiconductor heterostructures, to improve the performances of existing devices and systems as well as enable new functionalities.

This Special Issue of Nanomaterials aims at establishing a comprehensive and balanced collection of works which embodies the current active research on graphene-based optoelectronic and plasmonic devices, with the goal of encompassing the state-of-the-art developments for all different types of devices within the scope of this Special Issue. We encourage researchers working in the above mentioned and related areas to submit papers to join contributions from leading research groups.

Manuscripts accepted by this Special Issue will be published on a rolling basis. On average, manuscripts submitted to Nanomaterials receive the first-round peer review decision in approximately 15.8 days after the submission, and acceptance to publication is undertaken in 34 days.

Prof. Dr. Peter Qiang Liu
Prof. Dr. Vladimir Mitin
Guest Editors

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Keywords

  • graphene
  • 2D material
  • nanomaterial
  • optoelectronics
  • plasmonics
  • nanophotonics
  • metamaterial
  • metasurface
  • photodetector
  • light-matter interaction

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Published Papers (5 papers)

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Research

12 pages, 3365 KiB  
Article
Bias-Tunable Quantum Well Infrared Photodetector
by Gyana Biswal, Michael Yakimov, Vadim Tokranov, Kimberly Sablon, Sergey Tulyakov, Vladimir Mitin and Serge Oktyabrsky
Nanomaterials 2024, 14(6), 548; https://doi.org/10.3390/nano14060548 - 20 Mar 2024
Viewed by 1338
Abstract
With the rapid advancement of Artificial Intelligence-driven object recognition, the development of cognitive tunable imaging sensors has become a critically important field. In this paper, we demonstrate an infrared (IR) sensor with spectral tunability controlled by the applied bias between the long-wave and [...] Read more.
With the rapid advancement of Artificial Intelligence-driven object recognition, the development of cognitive tunable imaging sensors has become a critically important field. In this paper, we demonstrate an infrared (IR) sensor with spectral tunability controlled by the applied bias between the long-wave and mid-wave IR spectral regions. The sensor is a Quantum Well Infrared Photodetector (QWIP) containing asymmetrically doped double QWs where the external electric field alters the electron population in the wells and hence spectral responsivity. The design rules are obtained by calculating the electronic transition energies for symmetric and antisymmetric double-QW states using a Schrödinger–Poisson solver. The sensor is grown and characterized aiming detection in mid-wave (~5 µm) to long-wave IR (~8 µm) spectral ranges. The structure is grown using molecular beam epitaxy (MBE) and contains 25 periods of coupled double GaAs QWs and Al0.38Ga0.62As barriers. One of the QWs in the pair is modulation-doped to provide asymmetry in potential. The QWIPs are tested with blackbody radiation and FTIR down to 77 K. As a result, the ratio of the responsivities of the two bands at about 5.5 and 8 µm is controlled over an order of magnitude demonstrating tunability between MWIR and LWIR spectral regions. Separate experiments using parameterized image transformations of wideband LWIR imagery are performed to lay the framework for utilizing tunable QWIP sensors in object recognition applications. Full article
(This article belongs to the Special Issue Graphene-Based Optoelectronic and Plasmonic Devices)
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14 pages, 1290 KiB  
Article
On-Chip Integration of a Plasmonic FET Source and a Nano-Patch Antenna for Efficient Terahertz Wave Radiation
by Justin Crabb, Xavier Cantos-Roman, Gregory Aizin and Josep Miquel Jornet
Nanomaterials 2023, 13(24), 3114; https://doi.org/10.3390/nano13243114 - 11 Dec 2023
Cited by 1 | Viewed by 1037
Abstract
Graphene-based Field-Effect Transistors (FETs) integrated with microstrip patch antennas offer a promising approach for terahertz signal radiation. In this study, a dual-stage simulation methodology is employed to comprehensively investigate the device’s performance. The initial stage, executed in MATLAB, delves into charge transport dynamics [...] Read more.
Graphene-based Field-Effect Transistors (FETs) integrated with microstrip patch antennas offer a promising approach for terahertz signal radiation. In this study, a dual-stage simulation methodology is employed to comprehensively investigate the device’s performance. The initial stage, executed in MATLAB, delves into charge transport dynamics within a FET under asymmetric boundary conditions, employing hydrodynamic equations for electron transport in the graphene channel. Electromagnetic field interactions are modeled via Finite-Difference Time-Domain (FDTD) techniques. The second stage, conducted in COMSOL Multiphysics, focuses on the microstrip patch antenna’s radiative characteristics. Notably, analysis of the S11 curve reveals minimal reflections at the FET’s resonant frequency of 1.34672 THz, indicating efficient impedance matching. Examination of the radiation pattern demonstrates the antenna’s favorable directional properties. This research underscores the potential of graphene-based FETs for terahertz applications, offering tunable impedance matching and high radiation efficiency for future terahertz devices. Full article
(This article belongs to the Special Issue Graphene-Based Optoelectronic and Plasmonic Devices)
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13 pages, 6386 KiB  
Article
Suppression of Secondary Electron Emission from Nickel Surface by Graphene Composites Based on First-Principles Method
by Min Peng, Chang Nan, Dawei Wang, Meng Cao, Liang Zhang, Laijun Liu, Chunliang Liu, Dangqi Fang, Yiqi Zhang, Yonggui Zhai and Yongdong Li
Nanomaterials 2023, 13(18), 2550; https://doi.org/10.3390/nano13182550 - 12 Sep 2023
Cited by 1 | Viewed by 1104
Abstract
Secondary electron emission (SEE) is a fundamental phenomenon of particle/surface interaction, and the multipactor effect induced by SEE can result in disastrous impacts on the performance of microwave devices. To suppress the SEE-induced multipactor, an Ni (111) surface covered with a monolayer of [...] Read more.
Secondary electron emission (SEE) is a fundamental phenomenon of particle/surface interaction, and the multipactor effect induced by SEE can result in disastrous impacts on the performance of microwave devices. To suppress the SEE-induced multipactor, an Ni (111) surface covered with a monolayer of graphene was proposed and studied theoretically via the density functional theory (DFT) method. The calculation results indicated that redistribution of the electron density at the graphene/Ni (111) interface led to variations in the work function and the probability of SEE. To validate the theoretical results, experiments were performed to analyze secondary electron yield (SEY). The measurements showed a significant decrease in the SEY on an Ni (111) surface covered with a monolayer of graphene, accompanied by a decrease in the work function, which is consistent with the statistical evidence of a strong correlation between the work function and SEY of metals. A discussion was given on explaining the experimental phenomenon using theoretical calculation results, where the empty orbitals lead to an electron trapping effect, thereby reducing SEY. Full article
(This article belongs to the Special Issue Graphene-Based Optoelectronic and Plasmonic Devices)
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15 pages, 3522 KiB  
Article
Graphene Hybrid Metasurfaces for Mid-Infrared Molecular Sensors
by Tom Yager, George Chikvaidze, Qin Wang and Ying Fu
Nanomaterials 2023, 13(14), 2113; https://doi.org/10.3390/nano13142113 - 20 Jul 2023
Cited by 2 | Viewed by 1856
Abstract
We integrated graphene with asymmetric metal metasurfaces and optimised the geometry dependent photoresponse towards optoelectronic molecular sensor devices. Through careful tuning and characterisation, combining finite-difference time-domain simulations, electron-beam lithography-based nanofabrication, and micro-Fourier transform infrared spectroscopy, we achieved precise control over the mid-infrared peak [...] Read more.
We integrated graphene with asymmetric metal metasurfaces and optimised the geometry dependent photoresponse towards optoelectronic molecular sensor devices. Through careful tuning and characterisation, combining finite-difference time-domain simulations, electron-beam lithography-based nanofabrication, and micro-Fourier transform infrared spectroscopy, we achieved precise control over the mid-infrared peak response wavelengths, transmittance, and reflectance. Our methods enabled simple, reproducible and targeted mid-infrared molecular sensing over a wide range of geometrical parameters. With ultimate minimization potential down to atomic thicknesses and a diverse range of complimentary nanomaterial combinations, we anticipate a high impact potential of these technologies for environmental monitoring, threat detection, and point of care diagnostics. Full article
(This article belongs to the Special Issue Graphene-Based Optoelectronic and Plasmonic Devices)
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12 pages, 3265 KiB  
Article
Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices
by Haiqing Wan, Xianbo Xiao and Yee Sin Ang
Nanomaterials 2022, 12(1), 56; https://doi.org/10.3390/nano12010056 - 26 Dec 2021
Cited by 9 | Viewed by 3434
Abstract
We study the quantum transport properties of graphene nanoribbons (GNRs) with a different edge doping strategy using density functional theory combined with nonequilibrium Green’s function transport simulations. We show that boron and nitrogen edge doping on the electrodes region can substantially modify the [...] Read more.
We study the quantum transport properties of graphene nanoribbons (GNRs) with a different edge doping strategy using density functional theory combined with nonequilibrium Green’s function transport simulations. We show that boron and nitrogen edge doping on the electrodes region can substantially modify the electronic band structures and transport properties of the system. Remarkably, such an edge engineering strategy effectively transforms GNR into a molecular spintronic nanodevice with multiple exceptional transport properties, namely: (i) a dual spin filtering effect (SFE) with 100% filtering efficiency; (ii) a spin rectifier with a large rectification ratio (RR) of 1.9 ×106; and (iii) negative differential resistance with a peak-to-valley ratio (PVR) of 7.1 ×105. Our findings reveal a route towards the development of high-performance graphene spintronics technology using an electrodes edge engineering strategy. Full article
(This article belongs to the Special Issue Graphene-Based Optoelectronic and Plasmonic Devices)
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