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Photonics
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Advanced Semiconductor Laser Diodes and Detectors
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Advanced Semiconductor Laser Diodes and Detectors

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Lasers, Light Sources and Sensors".

Deadline for manuscript submissions: 31 May 2024 | Viewed by 2030

Special Issue Editors

Dr. Cheng-Ao Yang

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Guest Editor
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: semiconductor laser diodes; T2SL detectors; quantum dot lasers and detectors; molecule beam epitaxy; antimony; infrared lasers and detectors
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Donghai Wu

E-Mail Website
Guest Editor
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: T2SL detectors; molecule beam epitaxy; antimony; infrared lasers and detectors; high-operating-temperature detectors; MOCVD

Special Issue Information

Dear Colleagues，

Infrared semiconductor laser diodes and detectors are all important optoelectronics devices because of their incomparable high performance, high efficiency and highly integrated features.

The new generation of semiconductor lasers and detectors is moving towards small size, lightweight, higher performance, low power consumption, low price, new light generating and detecting quantum mechanism, which plays an important role in sensing, computing, medical treatment, 6G, quantum technology, automatic pilot, Lidar, advanced manufacturing and other industries. This Special Issue will focus on the advanced progress of mechanisms, materials, processes and applications of semiconductor laser diodes and detectors.

Potential topics include but are not limited to the following:

  • Energy band simulation design of semiconductors and detectors;
  • High-power semiconductor lasers;
  • Single-mode lasers including DFB , DBR, ECL and photonic crystal laser;
  • Tunable laser and integrated laser devices;
  • Lasers and detectors based on quantum mechanisms including ICL, QCL, T2SL, MCT and QCD et al.;
  • Cooled and uncooled detectors;
  • Multicolour FPA detector;
  • High-operating-temperature detectors;
  • Other high-performance semiconductor lasers and detectors.

Dr. Cheng-Ao Yang
Prof. Dr. Donghai Wu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor laser diode
  • interband cascade laser
  • quantum cascade laser
  • type II superlattice
  • MCT
  • semiconductor detector

Published Papers (2 papers)

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Research

9 pages, 1871 KiB  
Article
Quantum Cascade Lasers Grown by Metalorganic Chemical Vapor Deposition on Foreign Substrates with Large Surface Roughness
by Shining Xu, Shuqi Zhang, Jeremy D. Kirch, Cheng Liu, Andree Wibowo, Sudersena R. Tatavarti, Dan Botez and Luke J. Mawst
Photonics 2023, 10(12), 1377; https://doi.org/10.3390/photonics10121377 - 14 Dec 2023
Viewed by 856
Abstract
The surface morphology of a buffer template is an important factor in the heteroepitaxial integration of optoelectronic devices with a significant lattice mismatch. In this work, InP-based long-wave infrared (~8 µm) emitting quantum cascade lasers with active region designs lattice-matched to InP were [...] Read more.
The surface morphology of a buffer template is an important factor in the heteroepitaxial integration of optoelectronic devices with a significant lattice mismatch. In this work, InP-based long-wave infrared (~8 µm) emitting quantum cascade lasers with active region designs lattice-matched to InP were grown on GaAs and Si substrates employing InAlGaAs step-graded metamorphic buffer layers, as a means to assess the impact of surface roughness on device performance. A room-temperature pulsed-operation lasing with a relatively good device performance was obtained on a Si template, even with a large RMS roughness of 17.1 nm over 100 µm2. Such results demonstrate that intersubband-operating devices are highly tolerant to large RMS surface roughness, even in the presence of a high residual dislocation density. Full article
(This article belongs to the Special Issue Advanced Semiconductor Laser Diodes and Detectors)
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14 pages, 4520 KiB  
Article
Improvement of Power and Efficiency of High-Mesa Semi-Insulating InP: Fe Buried Heterostructure Lasers with Wide Bandgap Layers
by Chen Lyu, Xuliang Zhou, Hongyan Yu, Mengqi Wang, Yejin Zhang and Jiaoqing Pan
Photonics 2023, 10(10), 1094; https://doi.org/10.3390/photonics10101094 - 29 Sep 2023
Viewed by 847
Abstract
High-mesa semi-insulating buried heterostructure (SIBH) lasers with InP: Fe have great potential in high-speed and high-power scenarios, but the leakage current problem under high current injections has always limited their application. In order to solve the issue of low output power and low [...] Read more.
High-mesa semi-insulating buried heterostructure (SIBH) lasers with InP: Fe have great potential in high-speed and high-power scenarios, but the leakage current problem under high current injections has always limited their application. In order to solve the issue of low output power and low efficiency for high-mesa SIBH lasers, the mechanism of leakage current generation in InP-based semi-insulating (SI) layers at high injection levels was analyzed through numerical simulation. The deterioration of the device performance is due to the hole current-induced electron leakage current, which results from the reduction of the potential barrier and Fe-Zn interdiffusion. Thus, lasers with wide bandgap layers of InAlAs and ZnCdSe were employed for current blocking, the power and wall-plug efficiency of which were improved by more than 36% and 5%, respectively. For the first time, a SIBH laser based on lattice-matched ZnCdSe barrier layers is proposed, which shows good output performance and high reliability. The introduction of the wide bandgap layer in the SIBH structure establishes potential barriers to confine both carrier leakages at high injection levels, which realizes the high-power and high-efficiency operation of the laser. Full article
(This article belongs to the Special Issue Advanced Semiconductor Laser Diodes and Detectors)
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