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Novel Field-Effect Transistor Gas/Chem/Bio Sensing

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A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Biosensors".

Deadline for manuscript submissions: closed (5 October 2023) | Viewed by 13869

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Special Issue Editors

Dr. Congcong Zhang

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Guest Editor

Institute for Advanced Interdisciplinary Research, University of Jinan, Jinan 250011, China
Interests: organic light-emitting transistor; gas sensor based on organic electronics

Prof. Dr. Wenping Hu

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Guest Editor

1. Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
2. Beijing National Laboratory for Molecular Science, Key Laboratory of Organic Solids, Institution of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
Interests: organic polymer photoelectric functional materials; application of photoelectric devices; organic field effect transistor

Dr. Shanshan Cheng

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Guest Editor

Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
Interests: electrochemical nanotechnology; organic field effect device and interfaces for biosensing and biomedical applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Recently, biosensing technology has been intensely developed. Field-effect transistor (FET)-based biosensors are widely applied as advanced biosensing platforms by virtue of their inherent ability to transfer and amplify biological signals into electrical signals. This Special Issue covers all types of FET-based biosensors designed for biomolecular detecting. Some new functional/complex/assemblied/biomimetic nanostructures, some new interface and electrode modifications, and some new flexible wearable biosensors for diagnosis application are preferred.

Dr. Congcong Zhang
Prof. Dr. Wenping Hu
Dr. Shanshan Cheng
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

field-effect transistor
electrochemical sensing
biomarkers
biomedical analysis
biotechnology
advanced nanomaterial

Published Papers (6 papers)

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Research

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16 pages, 4591 KiB

Open AccessArticle

Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors

by Tae-Hwan Hyun and Won-Ju Cho

Sensors 2023, 23(15), 6720; https://doi.org/10.3390/s23156720 - 27 Jul 2023

Cited by 1 | Viewed by 1013

Abstract

Calcium ions (Ca²⁺) are abundantly present in the human body; they perform essential roles in various biological functions. In this study, we propose a highly sensitive and selective biosensor platform for Ca²⁺ detection, which comprises a dual-gate (DG) field-effect transistor (FET) with a high-k engineered gate dielectric, silicon nanowire (SiNW) random network channel, and Ca²⁺-selective extended gate. The SiNW channel device, which was fabricated via the template transfer method, exhibits superior Ca²⁺ sensing characteristics compared to conventional film channel devices. An exceptionally high Ca²⁺ sensitivity of 208.25 mV/dec was achieved through the self-amplification of capacitively coupled DG operation and an enhanced amplification ratio resulting from the high surface-to-volume ratio of the SiNW channel. The SiNW channel device demonstrated stable and reliable sensing characteristics, as evidenced by minimal hysteresis and drift effects, with the hysteresis voltage and drift rate measuring less than 6.53% of the Ca²⁺ sensitivity. Furthermore, the Ca²⁺-selective characteristics of the biosensor platform were elucidated through experiments with pH buffer, NaCl, and KCl solutions, wherein the sensitivities of the interfering ions were below 7.82% compared to the Ca²⁺ sensitivity. The proposed Ca²⁺-selective biosensor platform exhibits exceptional performance and holds great potential in various biosensing fields. Full article

(This article belongs to the Special Issue Novel Field-Effect Transistor Gas/Chem/Bio Sensing)

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12 pages, 2540 KiB

Open AccessArticle

Potentiometric Chloride Ion Biosensor for Cystic Fibrosis Diagnosis and Management: Modeling and Design

by Annabella la Grasta, Martino De Carlo, Attilio Di Nisio, Francesco Dell’Olio and Vittorio M. N. Passaro

Sensors 2023, 23(5), 2491; https://doi.org/10.3390/s23052491 - 23 Feb 2023

Cited by 4 | Viewed by 1818

Abstract

The ion-sensitive field-effect transistor is a well-established electronic device typically used for pH sensing. The usability of the device for detecting other biomarkers in easily accessible biologic fluids, with dynamic range and resolution compliant with high-impact medical applications, is still an open research topic. Here, we report on an ion-sensitive field-effect transistor that is able to detect the presence of chloride ions in sweat with a limit-of-detection of 0.004 mol/m³. The device is intended for supporting the diagnosis of cystic fibrosis, and it has been designed considering two adjacent domains, namely the semiconductor and the electrolyte containing the ions of interest, by using the finite element method, which models the experimental reality with great accuracy. According to the literature explaining the chemical reactions that take place between the gate oxide and the electrolytic solution, we have concluded that anions directly interact with the hydroxyl surface groups and replace protons previously adsorbed from the surface. The achieved results confirm that such a device can be used to replace the traditional sweat test in the diagnosis and management of cystic fibrosis. In fact, the reported technology is easy-to-use, cost-effective, and non-invasive, leading to earlier and more accurate diagnoses. Full article

(This article belongs to the Special Issue Novel Field-Effect Transistor Gas/Chem/Bio Sensing)

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14 pages, 2961 KiB

Open AccessArticle

Ultrasensitive Detection of Interleukin 6 by Using Silicon Nanowire Field-Effect Transistors

by Wen-Pin Hu, Yu-Ming Wu, Cao-An Vu and Wen-Yih Chen

Sensors 2023, 23(2), 625; https://doi.org/10.3390/s23020625 - 5 Jan 2023

Cited by 5 | Viewed by 1917

Abstract

Interleukin 6 (IL-6) has been regarded as a biomarker that can be applied as a predictor for the severity of COVID-19-infected patients. The IL-6 level also correlates well with respiratory dysfunction and mortality risk. In this work, three silanization approaches and two types of biorecognition elements were used on the silicon nanowire field-effect transistors (SiNW-FETs) to investigate and compare the sensing performance on the detection of IL-6. Experimental data revealed that the mixed-SAMs-modified silica surface could have superior surface morphology to APTES-modified and APS-modified silica surfaces. According to the data on detecting various concentrations of IL-6, the detection range of the aptamer-functionalized SiNW-FET was broader than that of the antibody-functionalized SiNW-FET. In addition, the lowest concentration of valid detection for the aptamer-functionalized SiNW-FET was 2.1 pg/mL, two orders of magnitude lower than the antibody-functionalized SiNW-FET. The detection range of the aptamer-functionalized SiNW-FET covered the concentration of IL-6, which could be used to predict fatal outcomes of COVID-19. The detection results in the buffer showed that the anti-IL-6 aptamer could produce better detection results on the SiNW-FETs, indicating its great opportunity in applications for sensing clinical samples. Full article

(This article belongs to the Special Issue Novel Field-Effect Transistor Gas/Chem/Bio Sensing)

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Review

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35 pages, 6877 KiB

Open AccessReview

Recent Advancements in Graphene-Based Implantable Electrodes for Neural Recording/Stimulation

by Md Eshrat E. Alahi, Mubdiul Islam Rizu, Fahmida Wazed Tina, Zhaoling Huang, Anindya Nag and Nasrin Afsarimanesh

Sensors 2023, 23(24), 9911; https://doi.org/10.3390/s23249911 - 18 Dec 2023

Viewed by 2564

Abstract

Implantable electrodes represent a groundbreaking advancement in nervous system research, providing a pivotal tool for recording and stimulating human neural activity. This capability is integral for unraveling the intricacies of the nervous system’s functionality and for devising innovative treatments for various neurological disorders. Implantable electrodes offer distinct advantages compared to conventional recording and stimulating neural activity methods. They deliver heightened precision, fewer associated side effects, and the ability to gather data from diverse neural sources. Crucially, the development of implantable electrodes necessitates key attributes: flexibility, stability, and high resolution. Graphene emerges as a highly promising material for fabricating such electrodes due to its exceptional properties. It boasts remarkable flexibility, ensuring seamless integration with the complex and contoured surfaces of neural tissues. Additionally, graphene exhibits low electrical resistance, enabling efficient transmission of neural signals. Its transparency further extends its utility, facilitating compatibility with various imaging techniques and optogenetics. This paper showcases noteworthy endeavors in utilizing graphene in its pure form and as composites to create and deploy implantable devices tailored for neural recordings and stimulations. It underscores the potential for significant advancements in this field. Furthermore, this paper delves into prospective avenues for refining existing graphene-based electrodes, enhancing their suitability for neural recording applications in in vitro and in vivo settings. These future steps promise to revolutionize further our capacity to understand and interact with the neural research landscape. Full article

(This article belongs to the Special Issue Novel Field-Effect Transistor Gas/Chem/Bio Sensing)

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16 pages, 3639 KiB

Open AccessReview

Recent Progress in Gas Sensors Based on P3HT Polymer Field-Effect Transistors

by Si Cheng, Yifan Wang, Ruishi Zhang, Hongjiao Wang, Chenfang Sun and Tie Wang

Sensors 2023, 23(19), 8309; https://doi.org/10.3390/s23198309 - 8 Oct 2023

Viewed by 1360

Abstract

In recent decades, the rapid development of the global economy has led to a substantial increase in energy consumption, subsequently resulting in the emission of a significant quantity of toxic gases into the environment. So far, gas sensors based on polymer field-effect transistors (PFETs), a highly practical and cost-efficient strategy, have garnered considerable attention, primarily attributed to their inherent advantages of offering a plethora of material choices, robust flexibility, and cost-effectiveness. Notably, the development of functional organic semiconductors (OSCs), such as poly(3-hexylthiophene-2,5-diyl) (P3HT), has been the subject of extensive scholarly investigation in recent years due to its widespread availability and remarkable sensing characteristics. This paper provides an exhaustive overview encompassing the production, functionalization strategies, and practical applications of gas sensors incorporating P3HT as the OSC layer. The exceptional sensing attributes and wide-ranging utility of P3HT position it as a promising candidate for improving PFET-based gas sensors. Full article

(This article belongs to the Special Issue Novel Field-Effect Transistor Gas/Chem/Bio Sensing)

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24 pages, 4442 KiB

Open AccessReview

Effects of Charge Traps on Hysteresis in Organic Field-Effect Transistors and Their Charge Trap Cause Analysis through Causal Inference Techniques

by Somi Kim, Hochen Yoo and Jaeyoung Choi

Sensors 2023, 23(4), 2265; https://doi.org/10.3390/s23042265 - 17 Feb 2023

Cited by 6 | Viewed by 4441

Abstract

Hysteresis in organic field-effect transistors is attributed to the well-known bias stress effects. This is a phenomenon in which the measured drain-source current varies when sweeping the gate voltage from on to off or from off to on. Hysteresis is caused by various factors, and one of the most common is charge trapping. A charge trap is a defect that occurs in an interface state or part of a semiconductor, and it refers to an electronic state that appears distributed in the semiconductor’s energy band gap. Extensive research has been conducted recently on obtaining a better understanding of charge traps for hysteresis. However, it is still difficult to accurately measure or characterize them, and their effects on the hysteresis of organic transistors remain largely unknown. In this study, we conduct a literature survey on the hysteresis caused by charge traps from various perspectives. We first analyze the driving principle of organic transistors and introduce various types of hysteresis. Subsequently, we analyze charge traps and determine their influence on hysteresis. In particular, we analyze various estimation models for the traps and the dynamics of the hysteresis generated through these traps. Lastly, we conclude this study by explaining the causal inference approach, which is a machine learning technique typically used for current data analysis, and its implementation for the quantitative analysis of the causal relationship between the hysteresis and the traps. Full article

(This article belongs to the Special Issue Novel Field-Effect Transistor Gas/Chem/Bio Sensing)

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