Next Article in Journal
Revealing Medicinal Constituents of Bistorta vivipara Based on Non-Targeted Metabolomics and 16S rDNA Gene Sequencing Technology
Next Article in Special Issue
Construction of Uniform LiF Coating Layers for Stable High-Voltage LiCoO2 Cathodes in Lithium-Ion Batteries
Previous Article in Journal
Sensitive Electrochemical Detection of Carcinoembryonic Antigen Based on Biofunctionalized Nanochannel Modified Carbonaceous Electrode
Previous Article in Special Issue
Assessment of Selected Surface and Electrochemical Properties of Boron and Strontium-Substituted Hydroxyapatites
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Molecules
Volume 29
Issue 4
10.3390/molecules29040859
molecules-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6

by
Yueqian Zheng
,
Tao Xu
,
Xuan Wang
*,
Zhi Sun
and
Bai Han
Department of Electric Engineering, Harbin University of Science and Technology, 52 Xuefu Rd., Nangang, Harbin 150080, China
*
Author to whom correspondence should be addressed.
Molecules 2024, 29(4), 859; https://doi.org/10.3390/molecules29040859
Submission received: 11 January 2024 / Revised: 2 February 2024 / Accepted: 8 February 2024 / Published: 15 February 2024
(This article belongs to the Special Issue Physicochemical Research on Material Surfaces)
Browse Figures
Review Reports Versions Notes

Abstract

This study successfully fabricated the quaternary topological insulator thin films of Bi1.2Sb0.8Te0.4Se2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the separation of transport characteristics between the bulk and surface of topological insulator materials by utilizing a comprehensive Physical Properties Measurement System (PPMS) and Terahertz Time-Domain Spectroscopy (THz-TDS) to extract electronic transport information for both bulk and surface states. Additionally, the dielectric polarization behavior of BSTS in the low-frequency (10–107 Hz) and high-frequency (0.5–2.0 THz) ranges was investigated. These research findings provide crucial experimental groundwork and theoretical guidance for the development of novel low-energy electronic devices, spintronic devices, and quantum computing technology based on topological insulators.
Keywords: nanoscience; topological insulator Bi1.2Sb0.8Te0.4Se2.6; transport separation; spectroscopy nanoscience; topological insulator Bi1.2Sb0.8Te0.4Se2.6; transport separation; spectroscopy
Graphical Abstract

Share and Cite

MDPI and ACS Style

Zheng, Y.; Xu, T.; Wang, X.; Sun, Z.; Han, B. Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6. Molecules 2024, 29, 859. https://doi.org/10.3390/molecules29040859

AMA Style

Zheng Y, Xu T, Wang X, Sun Z, Han B. Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6. Molecules. 2024; 29(4):859. https://doi.org/10.3390/molecules29040859

Chicago/Turabian Style

Zheng, Yueqian, Tao Xu, Xuan Wang, Zhi Sun, and Bai Han. 2024. "Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6" Molecules 29, no. 4: 859. https://doi.org/10.3390/molecules29040859

APA Style

Zheng, Y., Xu, T., Wang, X., Sun, Z., & Han, B. (2024). Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6. Molecules, 29(4), 859. https://doi.org/10.3390/molecules29040859

Article Metrics

Back to TopTop