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Volume 15
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10.3390/en15145244
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Article

An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications

by
Edemar O. Prado
1,2,*,
Pedro C. Bolsi
1,2,
Hamiltom C. Sartori
2 and
José R. Pinheiro
1,2
1
Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil
2
Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil
*
Author to whom correspondence should be addressed.
Energies 2022, 15(14), 5244; https://doi.org/10.3390/en15145244
Submission received: 17 June 2022 / Revised: 7 July 2022 / Accepted: 12 July 2022 / Published: 20 July 2022
(This article belongs to the Special Issue Advances in Power Electronic Converters with Application in Renewable Energy Sources)
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Abstract

This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A–40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.
Keywords: comparative analysis; GaN; power MOSFET; power electronics; SiC comparative analysis; GaN; power MOSFET; power electronics; SiC
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MDPI and ACS Style

Prado, E.O.; Bolsi, P.C.; Sartori, H.C.; Pinheiro, J.R. An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications. Energies 2022, 15, 5244. https://doi.org/10.3390/en15145244

AMA Style

Prado EO, Bolsi PC, Sartori HC, Pinheiro JR. An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications. Energies. 2022; 15(14):5244. https://doi.org/10.3390/en15145244

Chicago/Turabian Style

Prado, Edemar O., Pedro C. Bolsi, Hamiltom C. Sartori, and José R. Pinheiro. 2022. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications" Energies 15, no. 14: 5244. https://doi.org/10.3390/en15145244

APA Style

Prado, E. O., Bolsi, P. C., Sartori, H. C., & Pinheiro, J. R. (2022). An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications. Energies, 15(14), 5244. https://doi.org/10.3390/en15145244

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