Silicon Carbide Converter Design: A Review

Abstract

To achieve lower switching losses and higher frequency capabilities in converter design, researchers worldwide have been investigating Silicon carbide (SiC) modules and MOSFETs. In power electronics, wide bandgap devices such as Silicon carbide are essential for creating more efficient, higher-density, and higher-power-rated converters. Devices like SiC and Gallium nitride (GaN) offer numerous advantages in power electronics, particularly by influencing parasitic capacitance and inductance in printed circuit boards (PCBs). A review paper on Silicon carbide converter designs using coupled inductors provides a comprehensive analysis of the advancements in SiC-based power converter technologies. Over the past decade, SiC converter designs have demonstrated both efficiency and reliability, underscoring significant improvements in performance and design methodologies over time. This review paper examines developments in Silicon carbide converter design from 2014 to 2024, with a focus on the research conducted in the past ten years. It highlights the advantages of SiC technology, techniques for constructing converters, and the impact on other components. Additionally, a bibliometric analysis of prior studies has been conducted, with a particular focus on strategies to minimize switching losses, as discussed in the reviewed articles.

1. Introduction

In the power electronic industry, converters and inverters play an important role in the industry. Technology is increasing day by day. In the electronics industry, Silicon carbide has changed power electronics, and Silicon carbide module offers superior performance compared to other devices. Coupled inductors with Silicon carbide modules offer a reduction in electromagnetic interference and improve the efficiency of the power converters. The use of coupled inductors increased in designing power converters. This paper reviews the significant milestones and research contributions in this field from 2014 to 2024.

Power electronics play an important role in the formation of power converters. Nowadays, power converters are designed for higher voltage and power rating. Silicon and Silicon carbide-based switching devices are used for higher voltages and frequencies [1]. The converters are constructed using different techniques and components. The converters are differentiated according to their power rating, losses and efficiency, temperature scaling, voltage, and current rating efficiency [2,3]. Different types of converters are now being designed using Gallium nitride and Silicon carbide materials. These materials have benefits according to their characteristics.

Wide bandgap semiconductors such as Silicon carbide and Gallium nitride are recommended by researchers and scholars for manufacturing power converters. Silicon carbide and Gallium nitride-based converters give excellent efficiency, can operate in high switching frequency, and gives lower losses as compared to traditional silicon-based converters. Although both Silicon carbide and Gallium nitride-based converters offer high efficiency, Gallium nitride is limited to low-voltage applications and Silicon carbide modules (SiC MOSFETs) can operate with high-voltage efficiency [4]. Both technologies are already used in renewable energy systems, electric vehicle chargers, wireless chargers, and the formation of grid-tie converters.

Silicon carbide is a semiconductor material, which is also used to build power electronic devices [5]. It offers lower power losses, a higher temperature range, higher frequencies, faster switching rates, and good heat conduction. Silicon carbide (SiC) MOSFETs and modules are widely used in various applications, including power electronics and automotive systems. The first Silicon carbide power electronic device was introduced in 1990 [1].

The characteristics and materials of the devices impact the functionality of the devices; that is why grid tie converters were built in recent days with silicon. Silicon carbide and Gallium nitride-based switching devices are more common nowadays, although the price of those devices is an important factor affecting efficiency [4,5]. To construct power devices utilizing high-voltage and high-frequency, Silicon carbide material is employed. Silicon carbide-based converters are more efficient than Silicon-based converters due to the properties of Silicon carbide material, which offer lower resistance, higher voltage and frequency capabilities, faster switching speed, and lower conduction losses.

Silicon carbide modules have an advantage over Silicon and Gallium nitride modules and MOSFETs in the development of power converters, due to their lower switching losses and fast switching capabilities. In the past, a great deal of research has been done regarding converter designs and development. This research explores the depths of interleaving and coupled inductors. Extensive research has been conducted in the past on converters and inverters like full-bridge or half-bridge converters, regarding the types of converters like voltage source converters and current source converters. The buck and boost converters are common examples of converter designs, but they are very important for power applications. Pulse width modulation techniques are prominent in the research of DC-AC converters [4]. There are different mechanisms introduced to control the width of gate pulses. In a PWM converter, the output voltage is the rated voltage, regardless of the user’s choice, regardless of the output load. In conventional converters, the output voltage fluctuates in accordance with the changes in the load. The output voltage of the PWM converter is corrected by changing the width of the pulses.

The first Silicon carbide-based Schottky diode was produced by Infineon technology in 2001, which offers extraordinary characteristics in power electronics developments. It was the beginning of the Silicon carbide devices in power electronics. Figure 1 shows the yearly development progress of Silicon carbide power devices.

Despite being expensive, SiC MOSFETs have been used in many devices from 2006 to 2010. High-voltage and high-frequency performance are observed in the devices constructed from SiC MOSFETs. Between 2010 and 2015, SiC power devices came out. These devices are used to make converters, industrial drives, and power inverters. In this period, cost reduced, reliability improved, and the devices were used in many applications. SiC MOSFETs and diodes are now better than traditional Si devices. Between 2015 and 2020, SiC devices found their way into automotive and solar power systems. The range of high-voltage MOSFETs has grown from 1200 V to 1700 V. During this period, SiC devices are produced at a larger scale, and significant improvements in wafer quality were seen. From 2020 to the present, SiC devices have been enhancing performance and minimizing cost, thereby enabling SiC power devices to compete with conventional silicon devices. The third generation SiC devices have advanced with enhanced reliability and reduced losses, particularly in the fields of electric vehicles, solar inverters, and grid energy storage.

While the focus has been on SiC MOSFETs due to their superior switching characteristics, SiC Insulated Gate Bipolar Transistors (SiC IGBTs) also offer advantages, particularly for medium- and high-power applications. Their lower conduction losses at high currents make them suitable for converters operating at moderate switching frequencies but with high-power ratings. SiC IGBTs are increasingly used in:

• Medium-Voltage Converters: SiC IGBTs operate efficiently in voltage ranges of 3.3 kV to 15 kV, making them ideal for grid-tied applications and industrial motor drives.
• Electric Vehicle Traction Inverters: In high-power applications where conduction losses dominate over switching losses, SiC IGBTs provide a balance between efficiency and cost.
• High-Power DC-DC Converters: Their capability to handle high-voltages while maintaining efficiency makes them attractive for renewable energy and energy storage applications.

Table 1. Comparative Analysis of SiC MOSFETs vs. SiC IGBTs.

Parameter	SiC MOSFETs	SiC IGBTs
Switching Speed	Higher (few ns)	Moderate (tens of ns)
Conduction Losses	Higher at high currents	Lower at high currents
Voltage Range	Up to 3.3 kV	3.3 kV–15 kV
Efficiency at High-Power	Moderate	High

shows a comparative analysis between SiC MOSFETs vs. SiC IGBTs.

The efficiency of SiC-based power converters depends on multiple design considerations, including component selection, thermal management, and electromagnetic interference (EMI) mitigation. To optimize performance, the following aspects are critical. Device Selection: Choosing between SiC MOSFETs and SiC IGBTs based on power level, switching frequency, and thermal constraints. Gate Driver Optimization: Utilizing active gate drivers to control switching speed and minimize dv/dt-induced EMI. Thermal Management: Implementing advanced cooling techniques (e.g., liquid cooling, direct bonded copper substrates) to maintain device reliability. Minimizing Parasitic Inductances: Using PCB layout techniques and optimized busbar designs to reduce switching losses and voltage overshoot. Control Strategies: Employing pulse-width modulation (PWM) and soft-switching techniques to enhance efficiency and reduce losses.

Regarding the optimization journey of SiC-based converters, past research has demonstrated significant improvements in SiC converter designs. Some key milestones include:

• 2014–2016: Initial adoption of SiC MOSFETs in DC-DC converters with high switching frequencies (~800 kHz).
• 2017–2019: Introduction of SiC IGBTs in medium-voltage applications, reducing conduction losses in high-power converters.
• 2020–2024: Development of hybrid SiC-Si converter designs to balance cost and performance, improving overall system efficiency.

By detailing these advancements, the review provides a clear optimization roadmap for SiC-based power converters.

2. Methodology

Research on any topic is vast, it is not an easy job to filter specific research topics in scientific literature. In past years, many articles and papers were published related to Silicon carbide, to search for Silicon carbide converters that go in different directions but make research easier. Only relevant published documents are included in the research. There are many search engines available nowadays for scholars and researchers, like Google scholar, Web of Science (WOS), Scopus, BASE (Bielefeld Academic Search Engine), and CORE. Choosing a search engine totally depends upon the preference of a researcher, every search engine has a vast database of research topics. Getting specific topic related information from these databases has its own pros and cons. To review Silicon carbide-based converters, the Scopus database was selected. It has a comprehensive literature database with all IEEE conferences, web of science journals, and other verified venues.

The keywords used to search for articles are “silicon carbide”, but keep in mind that it is related to converters. The articles considered are between January 2014 to July 2024. These articles are from conferences and are written in English. A graphical view of the article selection process is shown below in Figure 2.

3. Statistical Analysis of Dataset (Research Papers)

The primary goal of this research is to conduct a comprehensive analysis of Silicon carbide-based power converters. This study examines trends in academic research, represented in the graph below, which illustrates the number of published papers over time. This graph illustrates the number of papers published over time. From January 2014 to July 2024, 178 publications from the past decade were gathered and analyzed for this purpose. Research interest and technological advancements related to Silicon carbide converters were highlighted in the graph, which highlights an exponential growth in research interest and technological advancements over the years.

The increase in publications shows how important SiC technology is becoming in the field of power electronics. In the past two decades, Silicon carbide-based power devices have become more popular and are used in many different industries and applications, like electric cars, renewable energy systems, and high-efficiency power supplies. SiC has higher thermal conductivity, a higher breakdown voltage, and a faster switching speed, which together make converters more efficient, compact, and reliable. Moreover, the analysis of the dataset reveals that researchers are increasingly focusing on optimizing SiC-based converter designs to minimize energy losses, enhance performance, and address the limitations of conventional silicon-based devices. The increasing interest in Silicon carbide technology is reflected not only in the number of publications, but also in the wide range of applications explored in these studies. From aerospace to industrial power systems, the material of choice for next-generation converter designs is SiC. Figure 3 depicts the distribution of the data in accordance with the searched data.

In 2014, Silicon carbide-based MOSFETs had already become an important component while designing converters. Eight research papers were selected from the database for their high relevance to the research. The research includes how dead-time affects losses in a high-frequency resonant converter using SiC BJT and SiC MOSFET, and presents the design and performance analysis of an all SiC boost DC-DC converter operating at 800 kHz. It discusses the design process for a three-phase AC-DC converter using paralleled SiC MOSFETs and examines power conversion efficiency and switching frequency [2,3,4]. Research involving other semiconductor devices is already in progress, including the development of a simulation model for SiC MOSFETs using simulation tools, and the evaluation of a boost inverter’s performance incorporating a Silicon carbide (SiC) device [5,6,7].

The research in 2015 delved into the behavior of SiC MOSFETs during both hard and soft switching conditions, analyzing switching losses, efficiency, and thermal performance. It also compares the performance of 15 kV SiC MOSFETs and SiC IGBTs under the same dv/dt (rate of voltage change) conditions [8,9]. The research focuses on designing high-speed machines (e.g., electric motors) using Silicon carbide-based inverters, predicts electromagnetic interference (EMI) emissions from SiC-based power converters and experimental results of a high-frequency SiC MOSFET inverter (using the CCS050M12CM2 1200 V, 50 A module). The research involves optimization techniques for sizing SiC converters connected to AC machine windings and includes minimizing switching losses in SiC MOSFETs for improved efficiency [10,11,12,13,14,15,16].

The key research points on Silicon carbide include high-density, high efficiency SiC MOSFET module with a 1.2 kV rating. The research goes in the depths of direct bonded copper (DBC) layout to mitigate current imbalances in SiC MOSFET multichip power modules. The study analyzes and compares losses in megahertz high-voltage isolated DC-DC converters using integrated SiC MOSFET modules and investigates power losses in a 50 kVA SiC converter, considering reverse conduction effects [17,18,19,20]. A comparison between 650 V and 900 V SiC MOSFETs for automotive inverters is conducted (SiC MOSFETs exhibit lower losses and higher switching speeds, making them suitable for electric vehicles). This research investigates SiC MOSFET-based automotive DC-DC converters considering parasitic inductance effects (parasitic inductance impacts switching behavior and efficiency) and proposes an isolated interleaved boost DC-DC converter using SiC power devices for microinverter applications [21,22,23].

The research evaluates the performance of three-phase solar inverters incorporating SiC devices (SiC MOSFETs improve efficiency and reliability in solar energy conversion), it also investigates the impact of SiC technology in a three-port active bridge converter for energy storage applications. PCB winding-coupled inductor design for a SiC-based soft-switching three-phase AC-DC converter is presented, along with a theoretical and experimental discussion and comparison of SiC and GaN power semiconductor devices [24,25,26,27].

The research investigates the benefits of SiC MOSFETs over silicon IGBTs in more electric aircraft power converters and discusses techniques to suppress conducted high-frequency signals in aerospace DC-AC converters using SiC MOSFETs [28,29].

Research on Silicon carbide power devices across various applications has demonstrated their substantial advantages over traditional silicon-based technologies. SiC and GaN semiconductors consistently demonstrate superior efficiency, thermal performance, and switching characteristics, making them ideal for high-power and high-frequency applications. According to studies, the incorporation of these devices into DC-DC converters, inverters, and power modules significantly enhances system performance and reliability. Despite higher costs and manufacturing challenges, the advantages of WBG devices are evident in reduced electromagnetic interference, lower stray inductances, and better thermal management. Innovations in gate driver design, dead-time optimization, and advanced modeling techniques have further enhanced their effectiveness. As the industry addresses existing challenges, SiC and GaN technologies are poised to propel significant advancements in power electronics, providing robust solutions for high-efficiency and high-density applications [30,31,32,33,34,35,36,37,38,39,40,41,42,43,44,45,46,47,48,49,50,51].

The research shows that Silicon carbide (SiC) technology is good for power electronics applications. SiC-based devices and systems, including inverters, converters, and gate drivers, show high efficiency, improved thermal management, and robust performance. Technology like virtual resistor control, hybrid converter designs, and active gate drivers show that SiC can be more reliable and efficient. Studies on suppressing common mode voltage, optimizing dead-time, and designing dv/dt filters help SiC systems work better in specific applications like electric vehicles and renewable energy. Parasitic elements and ripple effects are important considerations in optimizing SiC-based converters. Also, looking at the new developments in HVDC systems shows that SiC technology is still being improved and can be used in the future. SiC continues to push the boundaries of power electronics by offering solutions that are more efficient, compact, and capable of handling higher power densities and switching speeds than traditional silicon-based technologies [52,53,54,55,56,57,58,59,60].

Innovations in power electronics are showcased in research papers, which highlight advancements in SiC technology. High-efficiency SiC inverters employ a 3D-printed packaging structure and genetic algorithm-optimized heatsinks for 50 kW. The reliability and uniform voltage distribution in series-connected SiC MOSFETs are enhanced by a gate drive circuit and a voltage-balancing control technique. A high-frequency, high-voltage generator achieves 110 kV output using SiC devices. This generator is suitable for compact, high-voltage applications. The loss-compensated control scheme for dual active bridge converters improves efficiency, while the low-cost, high-power-density DC-DC converter targets hybrid and electric vehicles. An advanced DC-DC SiC converter for heavy traction applications and a voltage multiplier medium-voltage DC collection grid for PV plants are discussed. Various three-phase voltage source converter topologies for high-speed drives are compared, and a 1.5 kW half-bridge bidirectional DC-DC converter using GaN devices is presented. A fail-operational 5 kW 800 V–12 V DC-DC converter ensures reliability, while a 250 kW all-SiC three-level T-type inverter offers compactness and superior thermal management. The impact of inverter output dv/dt with respect to gate resistance and the efficiency of bidirectional DC-DC converters. Different MOSFET technologies’ influence on conducted interferences and the ageing effects on SiC MOSFETs’ short-circuit robustness are explored. Efficiency improvements for SiC-based synchronous boost converters, the influence of filter inductance on power losses, and techniques to mitigate drain-source voltage oscillations in SiC MOSFETs are studied. A multi-step packaging concept for series-connected SiC MOSFETs enhances reliability.

Comparisons between Si IGBT and SiC MOSFET inverters for high-speed drives, output sine-wave filter design for a 10 kW SiC inverter, and reliability analysis of SiC power modules in voltage source converters are included.

Comparisons of operating frequency and power output between Silicon carbide, silicon, and GaN are shown in Figure 4. The figure shows that Si devices are used for lower power and lower frequency applications, whereas GaN-based devices are used for higher voltage and higher frequency applications, such as data centers and consumer electronics. SiC devices are utilized in high-power, high-voltage switching applications, such as trains, electric vehicles and their battery chargers, as well as industrial automation systems.

The superior efficiency of SiC MOSFETs over traditional devices, the use of SiC converters as educational tools, control strategies for dv/dt reduction in modular converters, and gate drive performance in aircraft motor drives are discussed. Lastly, modulation techniques for dual active bridge DC-DC converters are investigated [60,61,62,63,64,65,66,67,68].

The research papers show that Silicon carbide (SiC) technology is changing power electronics, especially in applications that need high-efficiency and reliability. A Zero-Voltage-Switching current-source rectifier can improve performance and reduce energy losses, showing how SiC can be used in electric vehicle infrastructure. An improved analysis model for SiC power MOSFETs supports better design, while ultra-fast short-circuit detection mechanisms make these devices safer and more reliable in critical applications. Also, setting up a constant DC current source for calibrating transformers shows how precise SiC is, which makes its role in high-accuracy applications even stronger. The four-port Dual Active Bridge converter helps charge electric vehicles quickly. The exploration of G3 Power Line Communication compatibility further highlights the versatility of SiC technology in modern communication systems. Educational initiatives, such as the Power Box, bridge the gap between theory and practical application, preparing the next generation of engineers to innovate within this field. Real-time techniques for lifetime prediction and online efficiency optimization enhance the operational longevity and adaptability of SiC power converters. Moreover, advancements in modeling precision and thermal management through various studies ensure greater reliability in power systems. Overall, these collective efforts illustrate a robust commitment to refining SiC technology, ultimately driving the evolution of high-performance power electronic systems across multiple industries. The ongoing research not only drives innovation but also lays a foundation for sustainable and efficient energy solutions that meet the demands of the future [69,70,71,72,73,74,75,76,77,78,79,80,81].

The research papers showcase significant advancements in Silicon carbide (SiC) technology, with a particular emphasis on its utilization in power electronics to enhance efficiency, reliability, and performance. A 500 kW forced air-cooled SiC three-phase DC-AC converter achieves an impressive power density of 1.246 MW/m³ and an efficiency exceeding 98.5%, which is ideal for high-performance applications. A new condition monitoring method for SiC power MOSFETs enhances operational reliability by providing real-time device health assessments. Innovative driver circuits have been developed to improve system performance and reduce interference. The traction inverter design for electric vehicles focuses on enhancing the DC link voltage, thereby enhancing efficiency under diverse operating conditions. A comparative study highlights the advantages of SiC and GaN semiconductor devices in comparison to conventional silicon in electric vehicle systems. The design of dual active bridge converters using SiC MOSFETs aims to minimize power losses, while an efficiency comparison shows that SiC is competitive at high-switching frequencies. Techniques for electrothermal management, such as in-situ junction temperature monitoring, are proposed to enhance SiC reliability. The development of a high-efficiency SiC-based buck-boost converter for energy storage highlights the balance of complexity and efficiency. Research into switching voltage and current overshoots in SiC MOSFETs aims to optimize performance in half-bridge configurations. A mission-profile-based lifetime study of SiC IGBT modules emphasizes durability under real-world conditions. The papers collectively address opportunities and challenges in deploying fast switching SiC devices, paving the way for innovative solutions. Overall, the studies underline the versatility and efficiency of SiC technology, marking it as a cornerstone for future developments in power electronics [82,83,84,85,86,87,88,89,90,91,92,93,94,95].

In conclusion, the research papers summarized herein highlight the remarkable advancements in Silicon carbide (SiC) technology, particularly in power electronics and MOSFET applications. The innovative designs, such as the wide-range input auxiliary power supply and integrated active gate drivers, showcase SiC’s capability to enhance performance, efficiency, and versatility across various applications. However, the studies also highlight critical challenges, such as the impact of high dv/dt conditions on insulation lifetime, indicating that careful design considerations are essential to mitigate potential degradation. Furthermore, the findings emphasize the importance of optimizing thermal management through effective PCB design and continuous operational testing to ensure reliability under diverse conditions. The exploration of high-power modules, including the 1200 V 200 A SiC power module and the automotive compliant traction inverter. It reveals the significant potential of SiC technology to support high-efficiency, reliable solutions for modern electric vehicles and industrial applications. Digital active gate driving systems with closed-loop current balancing represent a significant leap toward improved current distribution, further enhancing the performance of parallel SiC MOSFETs. Additionally, the development of bidirectional CLLC converters for metro energy storage systems illustrates the versatility of SiC technology in various energy management contexts. Overall, these studies confirm that Silicon carbide technology is at the forefront of power electronics innovation, offering transformative potential for optimizing performance, enhancing reliability, and addressing the challenges of modern energy conversion and management. As research continues to advance, SiC technology is poised to revolutionize the landscape of power electronics, paving the way for future innovations and applications [96,97,98,99,100,101,102,103,104,105].

The research papers presented demonstrate profound advances in Silicon carbide (SiC) technology and its wide-ranging applications within power electronics. Numerous research studies have revealed that SiC devices exhibit significant enhancements in effectiveness and performance, particularly in renewable energy systems and motor control applications. The role of SiC in enhancing solar inverter technology is emphasized by the development of the Full SiC MOSFET DC-DC Boost Power Module. Improvements in voltage regulation and overall efficiency critical for digital gate drivers are highlighted by the high-voltage single-inductor multiple-output DC-DC Buck Converter. Furthermore, the focus on Accurate Data-Driven Losses Modeling equips designers with tools to better estimate and manage losses in SiC converters, paving the way for optimized designs. The introduction of high-performance gate drivers and dv/dt filter design enhances the reliability and performance of adjustable speed drives and medium-voltage applications. The Hybrid Si-SiC Voltage Source Converter represents a strategic approach to combine the strengths of silicon and SiC technologies, resulting in more efficient and cost-effective solutions. Additionally, research into Common-Mode Capacitive Couplings and Light-Load Performance Comparisons furthers the understanding of current sensor accuracy and the advantages of SiC devices. The Monolithic Integration of SiC components improve power converter design by reducing parasitic effects, while the Stability Analysis of Grid-Connected Wind Power Systems confirms the robustness of SiC technology in critical applications. In conclusion, these studies collectively illustrate that SiC technology is not just a trend but a transformative force in power electronics, offering enhanced efficiency, reliability, and performance that are vital for the future of energy management and conversion. The ongoing research and innovation in this field hold the promise of advancing the capabilities of power electronic systems, supporting a sustainable energy future [106,107,108,109,110,111,112,113,114,115].

While much of the focus in SiC converter design has been on DC-DC converters, SiC devices also enable high-frequency resonant converters and WPT systems, which benefit from the material’s superior switching capabilities. The following research highlights these advancements.

Class-E resonant converters achieve zero-voltage switching (ZVS) with reduced voltage stress across varying distances in a WPT system, as shown by [116]. SiC MOSFETs can further enhance such designs by minimizing switching losses at high-frequencies. Hybrid control strategies for CLLC converters, as proposed by [117], use a neural network-assisted hybrid control strategy for wide-gain CLLC resonant converters. The use of SiC devices optimizes efficiency in these converters, particularly in scenarios requiring high-gain operation. Parity-time symmetric wireless power transfer introduced [118] improves system robustness. SiC-based designs can be leveraged to further enhance the switching efficiency of these systems. Fractional-order tuning in WPT systems developed [119,120] optimizes zero-phase angle input and extends ZVS regions in WPT applications. The high-speed switching and low conduction losses of SiC devices could be essential in extending efficiency across variable load conditions.

4. Results

Based on the proposed methodology and the previous statistical analysis concerning SiC MOSFETs, the results intend to highlight the most important novelties and contributions regarding the topic.

4.1. SiC MOSFETs

When analyzing SiC MOSFETs, the dead-time analysis, the DC-DC buck/boost converter, the AC-DC converter, and the DC-DC multilevel converter were considered.

The World Market for Silicon carbide and Gallium nitride Power Semiconductors—2013 Edition [1] serves as a comprehensive resource, providing an in-depth analysis of the market dynamics regarding SiC and GaN power semiconductors.

4.1.1. Dead-Time Analysis

According to Tolstoy et al. [2], dead-time can be defined as the interval during which both switches in a switching device are turned off to prevent shoot-through failures. However, this protection system can impact the device’s efficiency. The authors investigated how the dead-time variations affect the switching and conduction losses in SiC MOSFETs and in BJTs, in the context of high-frequency resonant converters. The results show that when the dead-time increases, it can lead to higher losses, affecting the efficiency of resonant converters. Comparative studies of SiC MOSFETs and GaN were developed in [38,39], in the context of electric vehicle battery chargers and photovoltaic (PV) systems, respectively. The paper compared the operational efficiency of SiC MOSFETs-based chargers and GAN-based chargers, highlighting how dead-time settings influence performance and switching losses [38]. In turn, ref. [39] conducted a performance analysis of an interleaved high-gain DC-DC converter for PV systems, considering different input voltage and output power levels.

4.1.2. DC-DC Buck/Boost Converter

A DC-DC buck/boost converter can either step down (buck) or step up (boost) the input voltage depending on the control strategy and operating conditions [3]. The authors present a comprehensive study of 1 kW boost DC-DC converter using all SiC components, which can be effectively used in high-efficiency, high-frequency DC-DC converters. The operational frequency of 800 kHz was also discussed, emphasizing the benefits of high-frequency switching, such as reduced size of passive components and improved efficiency. Calderon-Lopez et al. [6] evaluates SiC BJTs for high-power DC-DC converters. In fact, the unique characteristics of SiC BJTs, such as high breakdown voltage, high thermal conductivity, and the ability to operate at elevated temperatures, make them suitable for high-power applications. The results quantify the efficiency of SiC BJT-based converters under different loads conditions, focusing on how these devices impact the overall performance of the converter. In [7], accurate models of SiC MOSFETs were developed in MATLAB Simulink, addressing the specific parameters and characteristics that are critical for simulating their behavior in DC-DC converter applications.

Smith et al. [8] explored the role of boost converters within boost inverter configuration, detailing how it steps up the input DC voltage to a higher output voltage. The paper also discusses the benefits of SiC devices in the boost converter section of the inverter: high efficiency, reduced switching losses, and improved thermal performance. Ahmed et al. [9] confirmed the higher efficiency of DC-DC converters with SiC components, especially at higher frequencies. In [10], the authors investigate the use of 15 kV SiC MOSFETs and IGBTs in medium-voltage DC-DC converters, showing that MOSFETs have lower losses for unidirectional converters at lower currents, while IGBTs have lower losses at higher currents.

Liu et al. [54] introduced a hybrid DC-DC converter designed for communication power supplies with a wide input voltage range. The proposed converter can operate in continuous conduction mode (CCM) and discontinuous conduction mode (DCM), depending on the load current and duty cycle. The results showed that the converter achieved a peak efficiency of 84.3% at 350 V and 480 W output.

Alharbi et al. [57] concluded that SiC-based devices significantly improve the efficiency and reduce power losses in interleaved SEPIC DC-DC converters, making them better suited for renewable energy applications. The proposed topology offers advantages in terms of step-up/step-down conversion and higher efficiency with fewer components. The results confirm the superior performance of SiC-based converters in terms of efficiency and power loss reduction. In [95], the authors analyze different converter designs with SiC and GaN models, to enhance the performance of DC-DC converters. In [96], the use of SiC MOSFETs allowed for a compact design capable of handling the high input voltage from the modular multilevel converter (MMC) submodule capacitor, which are crucial requirements for the auxiliary power supply in high-voltage applications. Zekorn et al. [107] designed a high-voltage DC-DC buck converter for the power management unit (PMU) of a gate-shaping digital gate driver for SiC MOSFETs. The results showed that the converter achieved an average efficiency of 81.2%.

Porpora et al. [108] propose a model for accurately predicting power losses in SiC converters, enabling efficient design and thermal management, which can be extended to other converter architectures by generating an appropriate dataset for the specific operating conditions.

Finally, in [89], the benefits of SiC are highlighted, regarding efficiency and power density, over traditional silicon devices, such as: high switching speed, leading to smaller and lighter passive components in DC-DC converters; higher voltage and temperature operation, enabling the design of more compact and efficient; and reduced switching losses, boosting overall efficiency in DC-DC converters.

4.1.3. AC-DC Converter

According to Rabkowski et al. [4], AC-DC converters, also known as rectifiers, are electronic circuits that convert AC to DC power. Therefore, the authors propose a three-phase AC-DC converter using SiC MOSFETs and SiC Schottky diodes, due to their lower on-state resistance and higher switching speeds compared to silicon-based transistors, leading to higher efficiency and potentially smaller and lighter converters. In [80], the authors focus on dynamic temperature-sensitive electrical parameters of medium-voltage, low-current SiC MOSFETs, and Si IGBTs. The results show that SiC MOSFETs offer advantages, in comparison with Si IGBTs, offering better thermal management capabilities and higher efficiency in AC-DC converters. Rasoanarivo et al. [15] designed a set of bus bars and a planar cable to mitigate voltage surges produced by an ultra-fast AC-DC converter using SiC transistors. The results show that the optimized design significantly reduces voltage fluctuations and improves the mode behaviour of the system. Finally, in [43], the authors focus on the challenges and design considerations involved in migrating from a Si IGBT-based AC inverter to a SiC MOSFET-based AC inverter.

4.1.4. DC-DC Multilevel Converter

DC-DC multilevel converters are power electronic converters that convert a DC voltage input to a different DC voltage output, using multiple levels of voltage to achieve this conversion [5]. Unlike single-level converters that switch between a high and low-voltage state, multilevel converters use multiple intermediate voltage levels. This converter has several advantages, such as reducing switching stress by distributing the voltage switching among multiple levels, which allows the use of smaller, less expensive, and more readily available switches, improving reliability; lower switching losses; higher efficiency, especially at higher power levels; lower electromagnetic interference, since smoother waveforms have fewer high-frequency harmonics; and improved output waveform quality [5].

Concari et al. [44] focus on a three-phase converter designed to reduce common-mode voltage in PV systems. The results show that SiC MOSFETs are beneficial for improving efficiency and reliability.

In [48], the paper focuses on the design and optimization of an isolated DC-DC converter for offshore wind turbine applications, with SiC semiconductors for improved performance. Finally, in [49], the benefits of using high-voltage converter cells in high-voltage direct current (HVDC) transmission applications were discussed. In fact, employing high-voltage SiC devices that allows a significant reduction in the number of cells required per converter arm, leading to a smaller, less complex converter with lower losses and improved harmonic performance.

4.2. SiC Applications

4.2.1. High-Speed Machines

Li et al. [11] stated that high-speed machines are electric motors or generators designed to operate at significantly higher rotational speeds than traditional motors.

The authors investigated the design of high-speed machines using SiC-based inverters, and stated the main advantages of using SiC for high-speed machines, such as higher switching frequency, reduced weight and volume, and improved efficiency [11].

4.2.2. SiC Converter

SiC converters are power electronics converters that use SiC semiconductors as their switching elements, and they offer significant advantages over traditional SiC-based converters due to SiC’s superior material properties, such as higher switching frequencies, higher operating temperatures, lower-on resistance, improved efficiency, and smaller size and weight [104]. Therefore, SiC converters represent a significant advancement in power electronics, offering substantial improvements in efficiency, size, weight, and cost-effectiveness.

In turn, in [77], the authors present an online efficiency optimization strategy for a digitally controlled, wide-operating-range SiC-based bidirectional boost converter, that allows for reduced switching losses, guarantees high efficiency of around 97.5%. In this study, the converter is designed for bidirectional power flow, meaning it can efficiently transfer power in both step-up and step-down modes.

4.2.3. Three-Phase Converters

Three-phase converters are power electronic devices that convert electrical power from a three-phase AC system to another form, such as DC or a different AC voltage and frequency [25]. These converters are crucial in many applications and sectors, in particularly for industrial and high-power applications. With this in mind, the paper analyses two main three-phase solar inverter topologies: central-type inverters and string-type inverters. In [26], the paper focuses on a three-port active bridge converter, with three ports: one connects to the AC main grid via a rectifier; the other connects to a secondary load via an inverter; and the last one connects to an energy storage system. In turn, in [51], the research compares the performance of two three-phase converters, one using SiC MOSFETs, and the other using SiC BJTs. The results show that the SiC MOSFETs were successfully driven with zero gate resistance and demonstrated minimal reverse recovery energy losses in their body diodes, eliminating the need for an additional external Schottky diode, unlike the SiC BJTs.

Fu et al. [53] present a high-efficiency SiC three-phase inverter with a virtual resistor control strategy for vehicle-to-home (V2H) applications. The inverter is part of an onboard EV battery charger, which allows bidirectional power flow between the vehicle and the grid. In [60], the paper presents a single-stage bidirectional buck three-phase AC/DC converter using SiC MOSFETs, that reduces size and losses, in comparison to traditional two-stage converters. This converter can also handle both charging and discharging of a battery system, crucial for renewable energy applications, and it directly converts three-phase AC input voltage to variable DC output voltage, eliminating the need for intermediate conversion stages. RLC and LC filters are incorporated to suppress harmonic components of the source current and output voltage ripple. The results demonstrated the converters efficiency, up to 98.4% at 2 kW, for example.

Finally, in [32], the authors propose a non-segmented PSpice model for SiC MOSFETs that addresses convergence issues and accurately reflects temperature-dependent parameters. Unlike conventional models with segmented equations for different operating regions, this model uses a single, continuous equation for the drain-source current.

4.3. SiC Devices

4.3.1. Grid-Connected Wind Power Systems

According to Wang et al. [120], grid-connected wind power systems are wind turbines that are connected to the electrical power grid, allowing electricity generated by wind turbines to be fed directly into the grid, supplying power to the consumers. The paper analyses the stability of grid-connected wind power systems SiC devices compared to systems using Si IGBTs. Through the Nyquist stability criterion, the stability was analysed under different grid conditions, showing that SiC-based systems show better stability margins that Si-based systems, especially under weak grid conditions.

In [93], the authors focus on the thermal behaviour of a SiC power module designed for traction inverters in electric vehicles. Traction inverters are crucial in electric vehicles, as they manage the energy flow between the battery and the motor to control speed and torque. Like the previous works, the authors highlight the use of SiC MOSFETs for traction inverters because they offer lower on-state resistance, reduce stray inductance, and provide better performance at high switching frequencies. Pu et al. [47] investigate the changes in near-field electromagnetic radiation of SiC-based power converters during device aging, using an accelerated aging test bench to induce device degradation. Measurements were taken at both the switching frequency and in a broader mid-range frequency spectrum, and the results showed that electromagnetic radiation increased with aging, particularly at the switching frequency and in higher frequency ranges.

4.3.2. Data Driven Losses

According to Zhou et al. [109], data driven losses refer to losses that are quantified and understood through data analysis and modeling. In fact, losses can be measured and expressed numerically and can be understood by analysing data from simulations and/or experimental results to quantify the losses associated with different filter designs. Therefore, the paper investigates the design and implementation of a filter to mitigate motor overvoltage in SiC-based adjustable speed drives. The results show that the loss is inversely proportional to the filter inductance for a given rise time, and the paper highlights that the filter’s impedance at its resonant frequency should be less than the cable impedance to avoid unexpected overvoltage oscillations, which is crucial for optimal design, and the relationship between impedance, inductance, and resonant frequency impacts the filter’s performance.

4.3.3. DC Current Transformer Calibration

DC current transformer (DCCT) calibration is the process of verifying and adjusting the accuracy of a DCCT output signal relative to the actual current flowing through its primary winding. DCCTs are used to measure large DC currents safely and efficiently by transforming them down to smaller, more easily measurable currents [109].

To ensure accurate measurements across the whole operating range, a calibration curve or table of correction factors might be generated. The curve shows the relationship between the actual primary current and the measured secondary output. The frequency response of the DCCT might also be characterized as part of a complete calibration, and the goal is to determine the linearity, accuracy, and stability of the DCCT over its operating range, and to provide the means to correct its measured output to obtain the true primary current value [109]. The authors propose a new design for a 100 kW islanded fast charging station to address the growing demand for faster EV charging, to achieve high power density and efficiency, that allows for efficient power transfer between multiple sources (grid, PV, for example) and loads (in this case, electric vehicles). The results demonstrate high efficiency and validate the feasibility of this approach for fast charging applications.

4.3.4. Multilevel/Interleaved Converter

Multilevel and interleaved converters are both power electronic converter topologies designed to improve performance over simpler single-level converters. According to Almasoudi et al. [24], multilevel converters generate a multilevel output voltage waveform from a DC input by combining the outputs of multiple simpler converters. The result is a smoother output voltage with lower harmonic content compared to a single-level converter, which reduces the size and cost of passive components. In turn, interleaved converters reduce the input current ripple and improve the efficiency of a DC-DC converter, where multiple identical converter stages are operated in parallel, with a controlled phase shift between their switching signals, reducing the peak-to-peak ripple of the input current. The authors proposed the design of an interleaved boost converter, using SiC MOSFETs and two identical boost converters stages operating with a phase shift between them, reducing input current ripple, and improving efficiency and reducing the size of passive components.

In [40], the paper focuses on the design of a single triple active bridge (TAB) cell for a DC-DC converter, with a cascaded multi-cell topology to achieve the required voltage transformation ratio, for increasing the voltage and power handling capability. In [69], the research focuses on a zero-voltage-switching current-source rectifier based on-board charger for electric vehicles using SiC devices.

4.3.5. Switching Capabilities

Switching capabilities refer to the speed and efficiency with which a power electronic device can transition between its on and off states [14]. According to the paper, switching speed is typically measured as the turn-on and turn-off times, representing the time it takes for the device to fully transition from on state to the other, and faster switching speeds are generally desirable for higher efficiency and high switching frequencies, and higher switching frequencies generally allow for smaller and lighter power converters. The results demonstrated that the proposed techniques allow SiC devices in inverters to achieve switching performance.

In [16], the paper analyses the switching losses in SiC MOSFETs. The paper also identifies two phases in turn-on: a current rise phase and a voltage fall phase. The turn-on speed is primarily determined by the slower discharge speed, depending on gate resistance and other factors. They found that by minimizing the parasitic capacitances and resistances, and by optimizing the gate driver. The turn-off process is significantly different. The channel current reduction speed determines the turn-off loss, that can be minimized or eliminated entirely if the channel current is reduced to zero before the voltage rises, which is achievable with a fast gate drive circuit. The paper concludes that lossless switching in SiC MOSFETs is theoretically achievable by using fast gate drive circuits to minimize turn-off losses and by employing soft switching techniques to minimize turn-on losses.

Finally, in [21], the paper discusses the performance of a 50 kVA three-phase converter using SiC MOSFETs and anti-parallel Schottky diodes. The paper emphasizes the superior switching capabilities of SiC devices compared to IGBTs. The results demonstrate that considering reverse conduction results in up to a 30% reduction in total power losses in the 50-kVA converter.

4.4. Power Converters

4.4.1. SiC MOSFET with Schottky Diode

SiC MOSFETs with integrated Schottky diodes are power semiconductor modules and a Schottky diode in a single package [41]. The combination of fast switching SiC MOSFETs and fast Schottky diodes leads to significantly reduced switching losses, resulting in higher efficiency and lower power dissipation. These modules are particularly well-suited for high-power, high-frequency applications, such as electric vehicles and hybrid electric vehicle inverters, solar inverters, industrial motor drives, or high-voltage DC transmission systems. Therefore, the paper presents a novel method for online condition monitoring of SiC MOSFETs, focusing on the gate-source interface.

In [110], the authors focus on designing and optimizing a high-performance gate driver for medium-voltage SiC power modules, and address the challenges of driving medium-voltage SiC power semiconductors, highlighting the need for high-voltage isolation and low coupling capacitance. The paper includes detailed analysis, simulations, and experimental results, to validate the improved performance of the second design. In [115], the paper proposes a novel clamped and harmonic injected Class-E converter designed specifically for wireless power transfer (WPT) systems. The combined clamped and harmonic injection makes the system more reliable and less sensitive to variations in operating conditions, and the clamping circuit significantly reduces the peak voltage stress on the main switch, improving its lifespan and reliability. The results validate the theoretical analysis and demonstrate the improved performance characteristics of the proposed converter compared to a standard Class-E converter in a WPT system.

Jafari et al. [90] detailed the optimization of a kilowatt-range boost converter. SiC Schottky diodes were used for rectification in their boost converter design. A key feature of these diodes is their zero-reverse recovery, which contributes to efficient high-frequency operation. The results show that selecting appropriately rated SiC Schottky diodes offers a good balance of efficiency and simplicity.

In conclusion, SiC MOSFETs with integrated Schottky diodes represent an advancement in power semiconductor technology, offering significant performance and reliability improvements over traditional silicon-based solutions [41].

4.4.2. 1200 V SiC Module

The 1200 V SiC modules are power semiconductor modules that use Silicon carbide as the base material for their transistors, typically MOSFETs, and 1200 V refers to their voltage rating–meaning they are designed to operate reliably at voltages up to 1200 volts [100]. In essence, 1200 V SiC modules represent a significant advancement in power electronics, offering improved efficiency, smaller size, and higher power density compared to previous technologies based on silicon. The paper discusses the design and testing of an 800 V 550 kVA SiC traction inverter for electric vehicles, with the use of 1200 V SiC MOSFET power modules. The 1200 V SiC MOSFET modules are characterized by having a very low on-state resistance per unit of footprint, which contributes to high efficiency. The results show that SiC MOSFETs are superior to traditional Si IGBTs because of their lower conduction and switching losses and improved temperature stability. The direct cooling technology further enhances their performance and contributes to a high-power density in the inverter.

In [101], a digital active gate driving system for paralleled SiC MOSFETs with closed-loop current balancing control was discussed. This method adapts to load variations and is independent of SiC device parameter variations, unlike previous methods that relied on precise modeling or measurement of device parameters. The closed-loop control adjusts the gate driving signals to actively balance the currents. The results demonstrate that the proposed system successfully achieves both dynamic and static current balancing.

Sivkov et al. [13] investigate a 1200 V, 50 A SiC MOSFET inverter characterized by high-speed switching introducing significant voltage ringing and electromagnetic interference, when using a standard PCB design intended for IGBT inverters. The paper compares SiC MOSFETs and Si IGBTs, highlighting the advantages of SiC in terms of lower conduction and switching losses and higher efficiency, particularly at higher frequencies.

4.4.3. 500 kW, 100 kW, 52 Kw, 10 kW, Converter

According to [91], switching configurations in the context of power electronics like an electric vehicle traction inverter, refer to the arrangement and type of semiconductor switches used to control the flow of power to the motor. Different configurations use different combinations and types of these switches to optimize performance based on factors like efficiency, cost, and reliability. This paper evaluates the performance of three different switching configurations for an electric vehicle traction inverter.

Bi et al. [83] analysed crosstalk suppression in SiC MOSFETs within a bridge-leg configuration. According to the authors, crosstalk suppression refers to techniques used to mitigate the unwanted voltage spikes (crosstalk) that occur between MOSFETs in a bridge-leg configuration during switching. Waveforms show a significant reduction in crosstalk voltage amplitude with the proposed circuit, confirming its effectiveness in mitigating the issue.

In [64], the paper focuses on the impact of parasitic capacitors on the switching performance of a 10 kW SiC MOSFET-based converter, particularly how they affect switching losses and transient behavior. The study examines the effect of the load inductor’s parasitic capacitance, considering both short and long connecting wires. A larger parasitic capacitance slows down both turn-on and turn-off transients, increasing switching energy loss. The results show that the magnitude of the effect varies depending on the source of the capacitance (load inductor, heat sink) and the operating load current.

Finally, in [50], the design of a multilayer busbar for a 100 kW three-level T-type power electronics building block (PEBB) that uses a hybrid switch consisting of Si IGBTs and SiC MOSFETs was analysed. The proposed design used a combination of Si IGBTs and SiC MOSFETs to leverage the advantages of both technologies.

4.5. PCB Design

4.5.1. Thermal Performance of SiC MOSFETs

Thermal performance can be described as the ability of a device or system to efficiently manage heat during its operation [105]. This is often measured in terms of thermal resistance (how much the temperature rises for a given amount of power dissipated) or thermal conductivity (how readily heat flows through a material). In fact, good thermal performance means a device can effectively dissipate the heat it generates, allowing it to operate reliably and efficiently across a wide range of temperatures. In turn, poor thermal performance can lead to overheating, reduced performance, and potential device failure. The authors reviewed SiC MOSFETs, highlighting their superior thermal properties compared to Si MOSFETs. The results showed that SiC has a significantly higher thermal conductivity than silicon, allowing for more efficient heat dissipation, enabling SiC-based devices to operate at higher current densities and temperatures. The superior thermal properties allow SiC MOSFETs to operate effectively at much higher temperatures than Si MOSFETs. Also, the faster switching speeds of SiC MOSFETs are attributed to their superior thermal properties, which reduce switching losses and enhance efficiency in power conversion applications.

In [94], the paper focuses on the failure mechanisms of double-trench SiC MOSFETs under single-pulse avalanche stress. While it investigates the influence of ambient temperature on avalanche endurance, the findings indicate that the temperature has little effect on the maximum single-pulse avalanche energy that the device can endure. The results show that this contrasts with planar-gate SiC MOSFETs, where temperature significantly affects avalanche endurance due to the melting of the die and package. In [98], the paper focuses on an integrated active gate driver for half-bridge SiC MOSFET power modules to address EMI noise issues arising from their high switching speeds. The paper emphasizes that the proposed active gate driver uses device temperature as one of its feedback signals to control the switching slew rate. This suggests that the system actively monitors and accounts for thermal effects on switching behavior, indirectly indicating a focus on maintaining reliable operation within thermal limits. The results demonstrate the active gate driver’s ability to adjust its control strategy based on temperature variations.

Zhang et al. [82] designed and tested a 500 kW forced air-cooled SiC three-phase DC-AC converter. The results highlight that the converter uses a switching frequency of 20 kHz, significantly higher than typical IGBT-based converters. This high frequency contributes to smaller passive components (inductors and capacitors), thereby reducing the overall system size and improving power density, but it also increases switching losses.

In conclusion, SiC MOSFETs can function at temperatures significantly higher than Si MOSFETs. The efficient heat dissipation enabled by SiC’s high thermal conductivity allows for operation at much higher current densities without overheating. Additionally, the improved thermal management contributes to faster switching speeds, resulting in lower switching losses and increased efficiency [105].

4.5.2. Gate Driver for SiC MOSFETs

A gate driver for SiC MOSFETs controls their gate voltage [56]. Gate drivers are characterized by several key features: fast switching, because they provide the necessary current to charge and discharge the gate capacitance quickly; voltage level shifting, since SiC MOSFETs need to be properly controlled above and below a certain threshold to turn it on and off effectively, and gate drivers often perform level shifting to convert a low-voltage control signal into a suitable high-voltage signal; over and under-voltage protection, to prevent over and under-voltage conditions that can damage the MOSFET; current limiting, to prevent excessive currents from damaging the gate or generating excessive EMI; dead-time control, to provide a short delay between the turn-off of one MOSFET and turn-on of another in applications such as H-bridges, to prevent shoot-through, preventing both devices from conducting simultaneously; and dampening oscillations, to suppress the voltage and current ringing, ensuring smooth switching [56]. Therefore, the paper proposes a novel, low-cost active gate driver for SiC MOSFETs to address the issue of large ringing caused by parasitic inductance during high-speed switching. The authors tested it in a double pulse test setup using a 1.2 kV, 35 A Cree SiC MOSFET. The results demonstrated a significant reduction in ringing compared to a conventional gate driver, even at high load currents.

Nguyen et al. [67] analysed a switched-capacitor-based nanosecond pulse generator using SiC MOSFETs. SiC MOSFETs were used for their high switching speed and low losses. In [99], the authors described the gate driver for a SiC MOSFET three-level power module. The results emphasized the importance of the gate driver design in ensuring accurate switching and minimizing parasitic effects, particularly in high-voltage and high-frequency applications. In [97], it was mentioned that each SiC MOSFET in the inverters is driven by gate driers that control the rise time of the converter through the use of a gate driver resistor. The paper concluded that partial discharge significantly reduces insulation lifetime; higher DC link voltages resulted in shorter lifetimes, but switching frequency and rise time had lesser impact; and the higher the DC link voltage, the higher the percentage of partial discharge events observed.

Yu et al. [111] analysed the use of SiC MOSFETs in the high-frequency unit to handle fractional power and reduce switching losses at high-frequency. Therefore, they propose and validate a hybrid Si/SiC three-phase voltage source converter using a fractional power processing approach. The proposed method uses a combination of Si IGBTs as low-frequency unit and SiC MOSFETs as high-frequency unit, connected in parallel at the input and in series at the output, through a three-phase transformer. This topology leverages the current-carrying capacity of Si IGBTs and the low switching losses of SiC MOSFETs. The low-frequency unit eliminated mid and high-frequency harmonics, and the high-frequency unit handles low-frequency harmonics. The results showed that the use of a transformer reduces the current stress on the SiC MOSFETs in the high-frequency unit, improving their reliability and lifespan. In [102], the paper investigated the challenges of using SiC MOSFETs, in particular the high switching speed causing issues like switching losses, overshoot, ringing, and crosstalk, and propose a solution using a co-optimized active gate driver with variable resistance to mitigate these issues, helping to define optimal resistance values for each stage of the switching process.

Finally, in [103], the paper does not provide specific details about the gate driver design for the SiC MOSFETs used in a bidirectional resonant converter for modularized metro energy storage systems. The results showed that the use of SiC devices allows for higher switching frequencies, improved power density due to smaller passive components, and increased efficiency, minimizing switching losses due to zero voltage switching.

4.5.3. Slew Rate Control Gate Driver

A slew rate control gate driver is a circuit that manages the rate of change of the gate voltage in power semiconductor devices [85]. According to the authors, controlling the slew rate is crucial for several reasons: reducing EMI, since fast changes in gate voltage can generate EMI; preventing switching losses, because abrupt voltage transitions can lead to significant switching losses; and protection of the device, since fast voltage changes can stress the device, potentially leading to damage. The results showed that GaN devices demonstrate a 60% reduction in conduction losses compared to Si devices under identical voltage and current conditions.

4.5.4. Improved Gate Driver

Improved gate drivers are designed to enhance the performance of power switching devices, particularly in high-power applications [33]. These allow for improvements on faster switching speeds, delivering faster rise and fall times for the gate voltage of the power switch, which leads to quicker switching transitions, enabling higher switching frequencies and reducing switching losses; improvement of EMI performance; enhancement of robustness, since they are designed to withstand harsh operating conditions, such as high-voltage or temperature, and provide protection against fault conditions. In fact, the specific improvements in a gate driver depend on the application and the power switching device being used [33]. Therefore, the paper stated that the proposed model significantly reduces stray inductance in the power loop. Also, the low parasitic inductance and capacitance allow for a zero-gate resistor, reducing switching losses and improving EMI performance, in contrast to traditional modules where external gate resistors are used to limit switching speed and reduce EMI.

4.5.5. EMI Issues

Electromagnetic interference (EMI) refers to unwanted electromagnetic energy that disrupts the performance of electronic equipment [12]. In power electronics, fast switching devices generate significant EMI, causing malfunctions or noise in other systems. Therefore, effective EMI filtering is crucial to mitigate them and to ensure reliable operation.

Sun et al. [12] investigated EMI emission prediction in SiC-based power converters, focusing on differential-mode noise, by using a curve-fitting optimization technique to estimate model parameters that are difficult to measure directly, thereby improving the accuracy of the model.

In [19], the paper focuses on mitigating current imbalance in multichip SiC MOSFET power modules, by analysing the mechanism causing transient current imbalance in parallel SiC MOSFETs, attributing it to differences in source voltage potentials due to parasitic inductances.

4.6. Si, SiC, and GaN

4.6.1. Three-Phase Voltage Source Converters

A three-phase voltage source converter is a power electronic circuit that converters a DC voltage source into a three-phase AC voltage source [112]. This converter is a key component in many applications, including high-voltage DC transmission for transferring large amounts of power over long distances, renewable energy integration such as wind turbines and solar power plants connected to AC grids, motor drives to control the speed and torque of AC motors, and flexible AC transmission systems to enhance power system stability and control. The paper focuses on common-mode capacitive couplings in current sensors used with medium-voltage converters enabled by 10 kV SiC MOSFETs.

In [113], the authors investigate medium-voltage isolated DC-DC converters and compares the light-load performance of two DC-DC converter topologies: series resonant converter and dual active bridge. The authors conclude that SiC MOSFETs enable higher switching frequencies and reduce component sizes. In [114], the authors proposed a monolithic integration of SiC lateral MOSFETs and lateral Schottky barrier diodes for power converters. The results demonstrated a successful monolithic integration, creating more efficient and compact power converters. In [92], the researchers investigate a SiC-based dv/dt generator to test the effects of fast switching transients on insulation materials. The results allowed us to conclude that the dv/dt generator effectively creates adjustable voltage slopes suitable for insulation testing.

Finally, in [86], the paper focuses on electrothermal management of SiC-based power electronics. The study demonstrated that SiC MOSFETs are more sensitive to gate voltage variations than IGBTs, leading to greater changes in conduction losses, which can be leveraged for thermal management. Also, it proposed an active thermal management (ATM) strategy using in-situ junction temperature monitoring and tunable gate voltage. The gate voltage is adjusted to control the power loss and maintain the junction temperature under varying load conditions.

4.6.2. Comparative Converter Study

In the context of electronics and power systems, a converter is a device that changes electrical energy from one form to another, and can involve changes in voltage, current, frequency, or AC-DC conversion [20]. The authors analysed three isolated DC-DC converter topologies for high-voltage megahertz-frequency applications, focusing on minimizing losses using integrated SiC MOSFET modules. The results showed that the LLC resonant converter emerges as the most suitable topology for high-frequency operation, due to its inherent soft-switching capability, independent of load conditions, minimizing switching losses and improving efficiency [20].

In [22], the performance benefits of using 650 V and 900 V SiC MOSFETs in automotive inverters were investigated, comparing them to traditional Si IGBTs and diodes, focusing on switching and conduction losses under various operating conditions. The results demonstrated that while 900 V SiC MOSFETs generally offer lower losses under standard conditions, they exhibit higher oscillations and steeper voltage transitions that might cause problems for EMI and motor isolation, and the 650 V SiC MOSFETs display less oscillation but require optimized design conditions.

Han and Sarlioglu [23] present a comprehensive study analysing the effects of parasitic inductance on the performance of SiC MOSFET-based automotive DC-DC converters, focusing on loss, efficiency, switching behavior, and EMI. The results showed that increasing parasitic inductance significantly increases converter losses and reduces efficiency, causes overshoots and ringing in the switching waveforms, and affects EMI emissions. In [31], the paper presents a comparative design and performance study of a non-isolated DC-DC buck converter using three different combinations of power devices: Si MOSFET–Si diode, SiC JFET–SiC Schottky diode, and GaN transistor–SiC Schottky diode, to evaluate their suitability for industrial applications requiring high switching speeds and efficiency. The results showed that the GaN combination showed the lowest losses overall. The GaN transistor–SiC Schottky diode converter demonstrated the highest efficiency across a wide range of input voltages and switching frequencies, as well as at higher frequencies, while the efficiency of the Si MOSFET–Si diode converter dropped significantly at higher frequencies, and the use of SiC JFET–SiC Schottky and GaN transistor–SiC Schottky allowed for higher switching frequencies without excessive power loss.

In turn, in [35], the paper presents a comparative evaluation of wide-bandgap and Si power devices in a flyback converter, focusing on power loss and efficiency. The results stated that wide-bandgap significantly reduce power loss and improve efficiency compared to Si MOSFETs, particularly at higher switching frequencies and temperatures, and the numerical results showed that the flyback converter with wide-bandgap switches exhibited a 17% increase in output power, in comparison to the Si-based converter. In [36], it focuses on suppressing parasitic turn-on in low-inductance power modules using SiC MOSFETs, investigating gate drive techniques to improve the performance of SiC MOSFETs within a power converter. The paper concludes that the three-level gate drive and the switched-series-resonant drive are successful in eliminating parasitic turn-on, significantly reducing switching losses in low-inductance power modules, and a substantial reduction in both turn-on and body-diode turn-off losses.

Finally, in [37], a comparative study was presented on two 7.2 kW electric vehicle battery chargers, one using a 650 V SiC MOSFETs and the other using a 650 V GaN HEMTs. The study demonstrates that both SiC and GaN are viable options for high-power-density EV battery chargers, and while GaN offers advantages in power density and potentially cost, SiC excels in thermal robustness and stability at higher junction temperatures. Overall, the goal of comparing converter studies is to optimize converter design for specific applications, maximizing efficiency and minimizing size and cost [35].

4.6.3. Grid-Tie Converters

Grid-tie converters are power electronic devices that connect distributed generation sources to the electrical grid [42]. They convert DC output into AC current that is compatible with the grid’s requirements, which involves regulating voltage and frequency to ensure safe and stable grid integration. The paper focuses on comparing the performance of SiC, GaN, and Si transistors within a full-bridge inverter. The results show that at lower junction temperatures, GaN shows the lowest losses across the frequency range considered. However, GaNs losses are very sensitive to temperature increases. Also, the optimal switching frequency varies depending on the technology and the prioritization between losses and volume, where GaN showed superior performance at higher frequencies in volume-sensitive applications, but SiC might be preferable at lower frequencies.

In [28], the theoretical and experimental performance of SiC and GaN power semiconductor devices was compared, analysing their conduction and switching losses, and comparing their characteristics. The results demonstrated that GaN HEMT has superior performance compared to SiC devices, making GaN HEMTs more suitable for applications where lower switching losses are crucial, such as higher frequency and high-power density converters.

O’Donnell et al. [29] focused on the design, construction, and performance of a 5 kVA aviation power module using SiC MOSFET. The paper concludes that the use of SiC MOSFET significantly reduces power dissipation compared to Si IGBTs, leading to improved power density and efficiency, which is particularly beneficial in aviation applications where size and weight are crucial. In [30], the authors analyzed the suppression of conducted high-frequency signals in DC-AC converters designed with SiC MOSFETs. The results showed that increasing the MOSFET’s fall time increases switching energy loss, which represents a trade-off between EMI reduction and efficiency.

4.7. Temperature Sensitive

4.7.1. Si and SiC Devices

Temperature sensitive analysis, in the context of power semiconductor devices, involves evaluating their electrical characteristics across a range of operating temperatures [45]. This analysis is crucial because the performance of semiconductors degrades with increasing temperature. The Si–SiC ANPCC demonstrates superior power efficiency compared to both the Si ANPCC and the SiC two-level converter, mainly due to the reduced switching losses from the use of SiC MOSFETs for high-frequency switching. Also, the hybrid converter exhibits power density, due to lower losses and possibly smaller component sizes from the higher power density of SiC components, with an improvement of 30% [45].

In [81], the paper presents a novel method for characterizing the thermal impedance of a multi-chip SiC MOSFET power module by combining optical measurement with multi-physics simulations to address limitations in traditional junction temperature measurement methods. The proposed method eliminates the need for complex circuitry, additional calibration procedures, or the removal of silicone gel for accurate measurements. In [87], the research focuses on developing a high-efficiency SiC-based buck-boost converter for energy storage systems. The results showed that the proposed SiC-based buck-boost converter had a high-efficiency.

Finally, in [88], the paper investigates the lifetime of SiC and Si IGBT power modules in a propulsion inverter under different driving cycles, including the effects of blanking time and MOSFET reverse conduction on power loss analysis. The paper analyses temperature swings experienced by the devices under both driving cycles, and the results showed that Si IGBT devices exhibit more significant temperature swings than SiC devices, indicating higher thermal stress on Si IGBTs. The analysis showed that a reasonable range of fluid flow rates in the heatsink can significantly influence device lifetime. Lower flow rates lead to higher thermal impedance and greater damage accumulation, reducing the lifetime [88].

4.7.2. Power Devices Challenges

According to Yuan [34], power devices have associated challenges, particularly high-speed switching devices, and can be categorized as: high rate of voltage and current changes associated with fast switching in SiC devices; increase EMI due to the high-frequency components in the switching waveforms; current overshoots and ringing, due to the unwanted current surges and oscillations caused by parasitic elements in the circuit; cross-talk effects, because of the unwanted interaction between devices within a phase leg, potentially leading to false switching; gate driver requirements, due to the need for fast and robust gate drivers to handle high switching speeds; and converter-load interaction, especially with respect to high rate of voltage changes effects on the load. Therefore, the paper highlights the advantage of SiC devices’ ability to operate at higher junction temperatures compared to Si devices due to SiC’s higher bandgap.

In turn, in [11], the paper investigated the design of high-speed electric machines using SiC-based inverters, focusing on the improvements in switching frequency and efficiency. The results showed that SiC MOSFETs offer significantly higher switching frequencies, enabling the use of higher-pole machines. In conclusion, addressing these challenges is critical for maximizing the benefits of advanced power devices and ensuring the reliable and efficient operation of power electronics systems.

4.8. Issue Addressed

4.8.1. Crosstalk Suppression

Crosstalk suppression refers to techniques used to minimize the unwanted interference between different parts of a power circuit, between the switching transients of parallel or series-connected power devices [84]. Crosstalk occurs when the fast switching transient of one device interacts with the Miller capacitance of a complementary device, causing voltage spikes and potentially shoot-through events. With this in mind, the paper provides a comprehensive review of active gate driver methodologies for SiC devices. The use of active gate drivers resulted in reduced EMI. The paper also showed how active gate drivers can improve the reliability of SiC devices by managing their switching behavior, particularly, using active gate drivers to control slew rated in parallel and series-connected devices, to improve current and voltage balancing, preventing over-stress and potential damage to individual devices.

4.8.2. Charging Systems Using SiC Devices

SiC devices are increasingly used in charging systems, particularly for electric vehicles, to improve efficiency and power density, and the speed of both onboard and offboard charging [17]. Therefore, the paper investigated the use of SiC MOSFETs in electric vehicle inverters to improve reliability. The study uses an electro-thermal model to simulate the junction temperatures of SiC MOSFETs and traditional Si IGBTs in an electric vehicle inverter under different operating conditions (rated operation, maximum acceleration, and low-speed climbing). The results show that SiC MOSFETs consistently exhibit lower junction temperatures and smaller temperature fluctuations compared to IGBTs. The lower junction temperatures and reduced temperature swings indicate improved reliability for SiC MOSFETs, which is significant because power device failures are often related to excessive junction temperatures and temperature cycling. In [70], the authors present an improved analytical model for SiC MOSFETs focusing on their switching behavior, addressing the complexities introduced by parasitic elements within SiC MOSFETs.

Laumen et al. [71] focused on short-circuit detection in inverters using SiC MOSFETs, presenting a novel ultra-fast short-circuit detection method. The key findings were: the ability of ultra-fast detection, which is crucial for protecting SiC devices in high-speed switching applications with low loop inductances; DC-link voltage monitoring, offering simplicity and a low component count; and robustness. El Sayed et al. [74] highlighted the advantages of SiC-based transistors over traditional Si-based transistors in high-frequency applications. The results showed that SiC transistors offer faster switching capabilities and reduced power losses.

Kilgore et al. [75] highlighted the advantages of using SiC devices in charging systems, as well as the disadvantages of SiC, such as drawbacks, the need for higher turn-on voltages, and a minimum negative VGS. In [76], the paper highlighted that SiC MOSFETs have been used for the next generation of high-voltage, high-power converters with smaller size and higher efficiency. Overall, in these charging systems, SiC devices can offer benefits such as higher efficiency, smaller size, and improved thermal performance compared to traditional silicon-based solutions.

4.8.3. Short Circuit Deduction

A short circuit can be described as a condition where there is an unwanted low-resistance path in the circuit, causing a large current to flow, which can lead to device failure and thermal runaway. During a short circuit, the gate driver may lose control over the drain current in a SiC MOSFET, leading to excessive heat generation. Based on the paper [72], it could be deduced that SiC MOSFETs can be vulnerable to thermal runaway during short circuit conditions if the gate driver does not have adequate control; the design of the gate driver is crucial for SiC MOSFETs to ensure fast protection and minimize the impact of short circuits, and minimizing loop inductance is essential to improve the safe operating area of SiC MOSFETs and enhance the system’s ability to withstand short circuits.

4.8.4. Current Density Effects

Current density effects refer to the phenomena and consequences arising from the amount of electric current flowing through a given cross-sectional area of the bond wires in a power module [52]. In a simple way, current density is the amount of electric current per unit area. When current flows through a conductor, it generates heat due to the conductor’s resistance, and higher current density leads to more heat generation. The heat generated by current flow causes the bond wires to expand and contract, leading to thermo-mechanical stress, which can cause fatigue, cracking, and eventual failure of the bond wires. The authors stated that in traditional power cycling tests, it is difficult to isolate the impact of current density on bond wire failure from the effects of temperature swing [52]. Therefore, a separation test method to study current density effects independently was proposed, which involves adjusting the gate voltage of the MOSFET to control the current density while keeping the temperature swing and average temperature constant. In conclusion, higher current density accelerates bond wire degradation and failure in SiC power MOSFET modules.

4.9. Efficiency

4.9.1. Buck/Boost Converter

Analysing the efficiency of buck/boost converters is important because higher efficiency reduces power loss, heat generation, and energy consumption, leading to improved system performance, lower operating costs, and increased reliability [80]. The paper identifies and analyses six groups of dynamic temperature-sensitive electrical parameters, examining their relationship with junction temperature, load current, DC voltage, and external gate resistance. The study emphasized the importance of considering parasitic parameters for accurate junction temperature estimation, especially in low-current devices, and the results showed that the turn-off voltage switching rate, the turn-off gate current peak, and the turn-on gate current, achieve better thermal sensitivity for medium-voltage SiC MOSFETs compared to Si IGBTs.

In [78], the paper investigated the use of a SiC current source inverter for electric aircraft propulsion. The results showed that the megawatt-scale current source inverter drive system achieves a high efficiency of up to 98.6%, and it has fault-tolerant capability for uncontrolled generation faults, and eliminating bulky filters and using low DC inductance improves power density.

Choudhury [66] discussed the increasing adoption of wide bandgap semiconductors, particularly SiC, in power electronic devices due to their superior switching frequency and reduced losses compared to traditional Si-based switches, by comparing their physical properties and performance characteristics, emphasizing the advantages of SiC in terms of breakdown voltage, switching speed, and junction temperature.

4.9.2. Medium-Voltage High-Frequency

According to [79], high-frequency operations allow for smaller and lighter passive components in power converters, which can lead to increased power density and potentially higher efficiency due to reduced losses. On the other hand, high-frequency switching can generate significant EMI, which can reduce overall system efficiency if not properly managed. The paper highlights that SiC devices enable high-speed switching, which is advantageous for efficiency and reducing the size of components. However, high-speed switching also leads to increased switching noise. The paper focuses on improving the accuracy of noise simulations, especially when using EMI filters to reduce noise, proposing a simulation method for conducted noise that involves modeling the leakage current using RLC series circuits.

Liu et al. [55] proposed a new hybrid converter design using SiC transistors for power conversion. It combines forward and flyback topologies to achieve high efficiency, high power density, and good output regulation. The use of SiC power transistors is crucial for handling the voltage stress and enabling high-frequency operation with acceptable efficiency. According to the results, the proposed converter achieved a peak measured efficiency of 90% at a 480 W output with a 200 kHz switching frequency, and it provides good output voltage regulation.

4.9.3. High-Density

In the context of power electronics, high-density refers to achieving a high-power output or capability within a small physical volume or footprint, measuring how much power can be processed or handled per unit of volume [18]. According to the authors, a high-density module can deliver the same amount of power as a larger, less dense module. The results showed that high-density can lead to improved performance characteristics, such as reduced parasitic inductances and capacitances, which can enhance switching speeds and reduce losses, and the module exhibits low gate and power-loop parasitic inductances.

4.10. Analysis Using SiC Converter

4.10.1. Suppression of Common Mode Voltage

Han et al. [58] focused on common mode voltage suppression in SiC inverters for electric vehicles, investigating the impact of high switching speeds and frequencies on common mode voltage, which can cause EMI and damage motor bearings. According to the authors, the results demonstrated that higher switching speeds increase high-frequency noise but have little effect on the main common mode voltage. Also, increasing the switching frequency raises the frequency on the main common mode voltage components, but it does not necessarily increase their amplitude.

4.10.2. DC Link Voltage Ripple/Capacitor

When non-electrolytic capacitors are used, the DC-link voltage ripple is significantly higher than in traditional inverters, and can cause increased total harmonic distortion in the load current and voltage stability issues [59]. This is important for minimizing the DC-link capacitance because non-electrolytic capacitors have lower capacitance density than electrolytic ones. Therefore, the paper analysed DC-link voltage ripple in voltage source inverters that do not use electrolytic capacitors.

In [63], the paper mentions that increasing the PWM frequency can reduce the volume of passive components in the DC-link. The study presented the design and characterization of an output filter for a 10 kW SiC inverter to reduce the voltage slew rate and attenuate high-frequency components. The paper demonstrated that the DC-link capacitor plays a crucial role in ensuring fast switching of the SiC MOSFETs by providing a stable voltage source and minimizing voltage ripple. In fact, increasing the PWM frequency, which is influenced by the DC-link capacitor, can reduce the volume of passive components in the DC-link and output filter stages. The DC-link voltage and its ripple characteristics influence the design and performance of the output filter, which is essential for reducing voltage stress on the motor and minimizing EMI [63].

In [65], the paper focuses on improving power efficiency in dual-buck inverters by reducing current overshoot in SiC diodes using coupled inductors. The main problem highlighted was that current overshoot in SiC diodes of dual-buck inverters increases switching power losses, reducing efficiency. Therefore, it was proposed to use a dual-buck inverter with coupled inductors and auxiliary diodes to mitigate current overshoot, and the results demonstrated that the proposed inverter reduces current overshoot in SiC diodes, leading to improved power efficiency.

4.10.3. Controller Design

Ishii and Jimichi [68] presented a verification of a SiC based modular multilevel cascades converter (MMCC) high-voltage DC transmission systems, focusing on the design, evaluation, and advantages of using SiC devices in MMCC compared to conventional Si IGBT modules. The paper mentions using a phase-shift triangular comparison method for PWM control, where the carrier phase is shifted for each cell. The results showed that using SiC devices reduces the capacitance of chopper cells by 17%, semiconductor loss is reduced by 50% or more when using SiC devices compared to conventional Si-IGBTs, and the proposed prototype showed a 21% reduction in volume and a 14% reduction in weight.

Controller designs are important for efficient operation because the PWM control method and switching frequency are crucial for the efficient operation of the MMCC, the choice of switching frequency and control method directly impacts semiconductor losses, proper controller design ensures the stability of the high-voltage DC transmission system, and the multi-level waveform output of MMCCs, which reduces the need for harmonic filters, relies on effective controller design [68].

4.10.4. SiC MOSFET Half-Bridge/Coupled Inductor

In [46], the paper investigates the influence of parasitic elements in laminated busbars on the turn-off voltage oscillation of SiC MOSFET half-bridge modules, because parasitic elements, particularly stray capacitance in the busbar, significantly impact the turn-off voltage oscillation of SiC MOSFETs. The results showed that the busbar model that includes stray capacitance provides more accurate simulation results, closely matching experimental waveforms, the stray capacitance lowers the oscillation frequency of the turn-off voltage, the influence of stray capacitance is more prominent at lower DC voltages, and considering stray capacitance in SiC-based converters leads to more accurate calculations of switching losses and improved converter design [46].

Finally, in [27], the paper explores the use of SiC MOSFETs in a three-phase AC-DC converter. The main contribution is the design of a PCB winding coupled inductor specifically for this SiC-based converter. The inductors are implemented using PCB windings, minimizing winding loss and maximizing coupling between the main and additional inductors. The results showed that the converter with the PCB winding coupled inductor achieves similar efficiency compared to a version using litz-wire inductors, with a peak efficiency around 98.6% in inverter mode.

5. Upcoming Challenges

Silicon carbide offers several benefits over traditional Silicon devices. It offers lower switching and condition losses and supports a wide range of frequencies. In power electronics, SiC MOSFETs and SiC modules play an important role. In the automotive sector, Silicon carbide plays an important role in the development of electric vehicles. Silicon carbide MOSFETs are considered as next generation power devices for the automotive sector. Silicon carbide is ideal for power converters and biomedical materials due to its extraordinary characteristics. The demand for SiC devices increased day by day; on the other hand, it also increases mass production challenges like substrate supply.

Silicon carbide MOSFETs offer higher power density and greater efficiency compared to other power devices, while also enabling operation at higher temperatures. On the other hand, the high temperature creates some challenges for SiC modules in terms of packaging materials that can sustain higher temperature. There is a lot of research already done to overcome stability issues created during high temperatures but there is much more need to overcome this in the future. There are also a few challenges in the manufacturing processes of SiC power devices like overcoming the high manufacturing cost. The substrate of Silicon carbide is expensive compared to silicon, which is one of the reasons SiC devices are expensive. Silicon carbide is reliable, but for the automotive sector, Silicon carbide devices need to be long-term reliable for different working conditions. Compatibility is always a big issue for many power devices with existing power systems. The demand for Silicon carbide devices is increasing day by day, it may be a big challenge in the future to deliver such devices in the market. Therefore, it must be considered to reduce the lead time and scale up production. The training of engineers and technicians regarding new research will overcome the manufacturing and production challenges.

6. Conclusions

The research on SiC (Silicon carbide) has shown significant improvements in converting power efficiently and effectively. Silicon carbide has become a better alternative to traditional silicon-based semiconductors because it has a high breakdown voltage, low switching losses, and can work at higher temperatures and frequencies. These properties have made converters smaller and more efficient.

Silicon carbide module-based power converters offer more efficiency, reliability, and higher temperature ranges as compared to other power devices like Silicon and IGBTs. In this paper, a review of Silicon carbide power devices is presented, investigating the previous research in the field of power electronics and the future challenges for the Silicon carbide power devices are explained. In industry, automotive, aerospace, power electronics, and biomedical, Silicon carbide-based power devices play a crucial role for the development of different systems and applications. SiC-based converters are an essential component in the evolution of power electronics because of further improvements in efficiency, reliability, and cost-effectiveness.