Kumar, S.; Zhang, X.; Mariswamy, V.K.; Reddy, V.R.; Kandasami, A.; Nimmala, A.; Rao, S.V.S.N.; Tang, J.; Ramakrishnna, S.; Sannathammegowda, K.
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes. Materials 2020, 13, 1299.
https://doi.org/10.3390/ma13061299
AMA Style
Kumar S, Zhang X, Mariswamy VK, Reddy VR, Kandasami A, Nimmala A, Rao SVSN, Tang J, Ramakrishnna S, Sannathammegowda K.
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes. Materials. 2020; 13(6):1299.
https://doi.org/10.3390/ma13061299
Chicago/Turabian Style
Kumar, Santosh, Xiang Zhang, Vinay Kumar Mariswamy, Varra Rajagopal Reddy, Asokan Kandasami, Arun Nimmala, S V S Nageswara Rao, Jue Tang, Seeram Ramakrishnna, and Krishnaveni Sannathammegowda.
2020. "Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes" Materials 13, no. 6: 1299.
https://doi.org/10.3390/ma13061299
APA Style
Kumar, S., Zhang, X., Mariswamy, V. K., Reddy, V. R., Kandasami, A., Nimmala, A., Rao, S. V. S. N., Tang, J., Ramakrishnna, S., & Sannathammegowda, K.
(2020). Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes. Materials, 13(6), 1299.
https://doi.org/10.3390/ma13061299
