Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas
Abstract
:1. Introduction
2. Experimental Details
3. Results
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Parameters | Symbols |
---|---|
Linear fitting of QMS signal | A |
Linear fitting of ionization cross section | |
X radical Density | nX |
Transmission probability | t |
Detection probability | |
Chamber pressure | p |
Boltzmann constant | k |
Gas temperature | T |
QMS signal | S |
Ionization cross section |
Radical Species | Labels |
---|---|
C | a |
F | b |
CF | c |
CF2 | d |
CF3 | e |
C2F3 | f |
CF4 | g |
C2F4 | h |
C3F4 | i |
C3F5 | j |
C4F6 | k |
Ar | l |
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Cho, C.; You, K.; Kim, S.; Lee, Y.; Lee, J.; You, S. Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas. Materials 2021, 14, 5036. https://doi.org/10.3390/ma14175036
Cho C, You K, Kim S, Lee Y, Lee J, You S. Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas. Materials. 2021; 14(17):5036. https://doi.org/10.3390/ma14175036
Chicago/Turabian StyleCho, Chulhee, Kwangho You, Sijun Kim, Youngseok Lee, Jangjae Lee, and Shinjae You. 2021. "Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas" Materials 14, no. 17: 5036. https://doi.org/10.3390/ma14175036