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10.3390/ma15010050
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Article

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

by
Matthias Kocher
1,*,
Mathias Rommel
1,
Paweł Piotr Michałowski
2 and
Tobias Erlbacher
1,3
1
Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen, Germany
2
Łukasiewicz Research Network—Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland
3
Chair of Electron Devices, Friedrich-Alexander-University Erlangen-Nuremberg, Cauerstraße 6, 91058 Erlangen, Germany
*
Author to whom correspondence should be addressed.
Materials 2022, 15(1), 50; https://doi.org/10.3390/ma15010050
Submission received: 22 October 2021 / Revised: 15 December 2021 / Accepted: 16 December 2021 / Published: 22 December 2021
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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Abstract

Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.
Keywords: 4H-SiC; ohmic contact; SIMS; Ti3SiC2; simulation 4H-SiC; ohmic contact; SIMS; Ti3SiC2; simulation

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MDPI and ACS Style

Kocher, M.; Rommel, M.; Michałowski, P.P.; Erlbacher, T. Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC. Materials 2022, 15, 50. https://doi.org/10.3390/ma15010050

AMA Style

Kocher M, Rommel M, Michałowski PP, Erlbacher T. Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC. Materials. 2022; 15(1):50. https://doi.org/10.3390/ma15010050

Chicago/Turabian Style

Kocher, Matthias, Mathias Rommel, Paweł Piotr Michałowski, and Tobias Erlbacher. 2022. "Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC" Materials 15, no. 1: 50. https://doi.org/10.3390/ma15010050

APA Style

Kocher, M., Rommel, M., Michałowski, P. P., & Erlbacher, T. (2022). Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC. Materials, 15(1), 50. https://doi.org/10.3390/ma15010050

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