Choi, Y.J.; Kim, J.; Kim, M.J.; Ryu, H.S.; Woo, H.Y.; Cho, J.H.; Kang, J.
Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications. Micromachines 2021, 12, 301.
https://doi.org/10.3390/mi12030301
AMA Style
Choi YJ, Kim J, Kim MJ, Ryu HS, Woo HY, Cho JH, Kang J.
Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications. Micromachines. 2021; 12(3):301.
https://doi.org/10.3390/mi12030301
Chicago/Turabian Style
Choi, Young Jin, Jihyun Kim, Min Je Kim, Hwa Sook Ryu, Han Young Woo, Jeong Ho Cho, and Joohoon Kang.
2021. "Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications" Micromachines 12, no. 3: 301.
https://doi.org/10.3390/mi12030301
APA Style
Choi, Y. J., Kim, J., Kim, M. J., Ryu, H. S., Woo, H. Y., Cho, J. H., & Kang, J.
(2021). Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications. Micromachines, 12(3), 301.
https://doi.org/10.3390/mi12030301