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Micromachines
Volume 13
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10.3390/mi13010047
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Article

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

by
Daoqun Liu
1,2,
Tingting Li
1,
Bo Tang
1,
Peng Zhang
1,
Wenwu Wang
1,
Manwen Liu
1,* and
Zhihua Li
1,*
1
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2
School of Electronic Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
*
Authors to whom correspondence should be addressed.
Micromachines 2022, 13(1), 47; https://doi.org/10.3390/mi13010047
Submission received: 8 December 2021 / Revised: 21 December 2021 / Accepted: 24 December 2021 / Published: 29 December 2021
(This article belongs to the Section D1: Semiconductor Devices)
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Abstract

Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection.
Keywords: impact ionization; silicon avalanche photodetector; CMOS technology; punch-through structure; temperature stability; near-infrared photodetector impact ionization; silicon avalanche photodetector; CMOS technology; punch-through structure; temperature stability; near-infrared photodetector

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MDPI and ACS Style

Liu, D.; Li, T.; Tang, B.; Zhang, P.; Wang, W.; Liu, M.; Li, Z. A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage. Micromachines 2022, 13, 47. https://doi.org/10.3390/mi13010047

AMA Style

Liu D, Li T, Tang B, Zhang P, Wang W, Liu M, Li Z. A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage. Micromachines. 2022; 13(1):47. https://doi.org/10.3390/mi13010047

Chicago/Turabian Style

Liu, Daoqun, Tingting Li, Bo Tang, Peng Zhang, Wenwu Wang, Manwen Liu, and Zhihua Li. 2022. "A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage" Micromachines 13, no. 1: 47. https://doi.org/10.3390/mi13010047

APA Style

Liu, D., Li, T., Tang, B., Zhang, P., Wang, W., Liu, M., & Li, Z. (2022). A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage. Micromachines, 13(1), 47. https://doi.org/10.3390/mi13010047

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