1. Introduction
The propagation-loss mechanisms of shear-horizontal (SH)-type waves on LiNbO
3 and LiTaO
3 have been intensively studied recently [
1,
2,
3,
4,
5,
6]. By bonding the sub-wavelength-thick LiNbO
3 or LiTaO
3 layer to a high-velocity substrate, the SH mode no longer couples with the bulk mode in substrate and the leaky component is effectively eliminated [
1,
2,
3,
4,
5,
6]; thus, the SH wave can abandon its traditional name—“leaky-surface acoustic wave (SAW)” but a favorable “nonleaky” feature instead. There are many choices of high-velocity substrates, such as AlN, Si, quartz, diamond, etc. [
1,
2,
3,
4,
5], and Si is used as an example in this study for its wide availability and cheap price. In addition, given that the acoustic propagation loss no longer dictates the choice of piezoelectric-substrate cut angle and ultra-large effective coupling coefficient (
keff2), cuts can be taken advantage of, such as low rotation from
YX-LiNbO
3 [
3,
4,
5,
6,
7].
Long-Term Evolution (LTE)—Advancement Pro, 5G sub-6 GHz new radio (NR), and emerging 6G standards require low-loss and wide-bandwidth (fractional bandwidth > 5%) filters that push the frequency limits SAW technology using optical lithography up to more than 2.5 GHz range [
8,
9,
10,
11,
12,
13,
14]. That shrinking SAW resonators size enables the high frequency, while the quality-factor (
Q) significantly deteriorates. With the
keff2 less than 10% and phase velocity (
vp) less than 4500 m/s, the current commercially popular standard-SAW and Temperature Compensated Surface Acoustic Wave (TCSAW) devices can hardly meet the requirements. Intriguingly, the low-angle-rotated
YX-LiNbO
3 provides ultralarge intrinsic
keff2 (~30%). After LiNbO
3 bonded to Si, the propagation-loss problem is resolved and high
Q is achieved [
4]. The multilayered LiNbO
3 SAW devices with ultralarge
keff2 and high
Q meet requirements in low frequency (<2.5 GHz)
. However, the
vp is still relatively low (~4000 m/s), limiting its application in LTE high-band (2.5–3.5 GHz, such as band 7, band41, etc.) filters and 5G NR applications. A high-velocity layer beneath the piezoelectric LiNbO
3 or LiTaO
3 does not effectively increase the phase velocity of the SH mode; rather, by adding a high-velocity layer, such as AlN, overlaid on top of the transducer and LiNbO
3, the phase velocity of the SH mode is visibly increased with only minimal trade-off on the
keff2, which can be much larger than needed for majority of the bands. In this way, a desirable nonleaky SH wave resonator with low propagation loss, high frequency (
f), and large-
keff2 can be achieved.
In addition, without a careful design of the substrate, the layered SH potentially has spurious responses in the out-of-band frequencies (Lamb modes) and near-band frequencies. This paper focuses on the design of layered substrate not only to optimize its narrow-band characteristics—f, Q, keff2, temperature coefficient of frequency (TCF)—but also for eliminating the out-of-band spurious responses.
By using the numerical calculation and finite-element-method (FEM) approaches, propagation characteristics of the SH modes in LiNbO3/Si and AlN/LiNbO3/Si are derived with varied substrate designs and the device performance is optimized as well as the presence of spurious modes avoided. Based on the analyses, new stacks with optimized substrate design are obtained, demonstrating the high frequency of 3 GHz at 1 µm interdigital transducer (IDT) pitch, high keff2 (14.4%) and a spurious free response at 0–6 GHz. After optimizations, these novel AlN/LiNbO3/Si nonleaky SH devices, featuring superb performance with high frequency ability and being spurious-free, show great potential for filters in next-generation RF front ends.
Symbols used in this paper are listed in
Table 1.
2. Substrate Leakage
Figure 1 depicts the FEM-simulated mode shapes of the SH wave propagating in LiNbO
3 substrate, LiNbO
3/Si layered substrate, and AlN/LiNbO
3/Si layered substrate. Perfect-matched-layer (PML) physics is assigned to bottom layers of the 3D unit cell models to simulate the substrate that is too thick, comparing it to wavelengths to generate wave reflections from its bottom. The periodic conditions are applied to both
x (perpendicular to IDT fingers) and
y (in parallel with IDT fingers) directions so that the basic semi-infinite plane condition is assumed for the wave propagation. The material constants are from [
14,
15,
16,
17] and are listed in
Table 2. In the structures shown,
hLiNbO3/
λ = 0.25,
hAlN/
λ = 0.2 are assumed; 8%
λ-thick aluminum (Al) is used as IDT electrodes here and throughout the paper.
As shown in
Figure 1a, the shear component in
YX-LiNbO
3 substrate still concentrates at the surface, but strong leakage results from coupling to the slow shear bulk acoustic wave and mechanically propagates down obliquely, as shown in
uz and
ux. The lower-case coordinate
x is the propagation direction proportional to IDT,
y is the transversal direction parallel to IDT, and
z the direction down into substrate. By bonding the high-velocity Si substrate to the sub-wavelength
YX-LiNbO
3, the SH wave in LiNbO
3/Si (
Figure 1b) no longer couples with the bulk mode and leaks into the substrate since the bulk velocity is higher than the SH mode on surface. After adding an AlN coating layer, the SH mode still concentrates in the LiNbO
3 piezoelectric layer and minimizes the leaky component into the Si substrate (
Figure 1c).
3. Propagation Characteristics of SH Wave in LiNbO3/Si
The
vp and
keff2 of the SH waves propagating in the single and layered piezoelectric substrates can be theoretically calculated using numerical analysis—Adler’s matrix approach [
17] or FEM [
18]. The material constants for both the calculation and FEM simulation are also listed in
Table 2. The numerically calculated propagation characteristics are checked with FEM simulation and agreed well with the FEM results. In the FEM simulation, the model is a 3D building-block cell with periodic boundary conditions (BCs) on both
x- and
y- directions. All the
keff2 are derived from series-resonance frequency (
fs) and parallel-resonance frequency (
fp) using the
IEEE standard definition of the device electromechanical coupling [
19]:
Comparing to the intrinsic coupling coefficient (
k intr2) derived from the difference from the open- and metallized-surface
vp:
the device-level
keff2 yields close values to the
kintr2 and considers the electric field more accurately. The differences of these two definitions of couplings are discussed and compared in detail in
Figure 2 of the reference [
18]
. Despite the similarity for a standard device, the impact of the actual electrode cross-sectional shape and coverage ratio can be considered in the
keff2 derivation but not
kintr2, so the
keff2 evaluation offers better accuracy and potential for the future device optimization. As a result, the device-level coupling coefficient
keff2 is utilized throughout the analysis of this work.
3.1. Cut Angle
As the propagation loss is no longer the main concern and dictates the cut-angle selection for the nonleaky SH wave in bonded wafers, the optimal cut angle can be chosen to optimize
vp and
keff2.
Figure 2a,b depicts the open-surface phase velocities
vp,o and
keff2 for LiNbO
3/Si across all rotation angles
θ from the
YX-LiNbO
3 with varied thicknesses of LiNbO
3 for both the SH main mode and the Rayleigh spurious mode.
The impact of the rotation angle on the propagation characteristics of SH mode in LiNbO
3/Si layered substrate is similar to on the LiNbO
3 substrate [
20], as depicted in
Figure 2a. Fortunately, a low rotation angle from
YX-LiNbO
3 enables high
vp,o, large
keff2 for the SH main mode, and low
keff2 for Rayleigh mode simultaneously. Therefore, the design range of
θ is 10–40° for the LiNbO
3/Si-based nonleaky SH wave devices for the high frequency, wide band, and clean spectrum, respectively.
In
Figure 2b, it can also be noted that
hLiNbO3 = 0.25
λ enables higher
vp,o than
hLiNbO3 = 0.5
λ of LiNbO
3/Si or LiNbO
3 substrate, and the optimized rotation angle also shifts up a bit for the optimum
keff2. These indicate weak dispersion in the layered substrate due to the sub-wavelength-thick piezo thin film.
3.2. Dispersion and Spurious Modes
As shown in
Figure 3a,b, the dispersive curves of the
vp,o’s and
keff2′s of the SH main mode, Rayleigh spurious mode, and S
0 Lamb mode spurious mode propagating in the LiNbO
3/Si bonded structure with varied rotation angle of
YX-LiNbO
3 are presented. Due to the sub-wavelength thick piezo-layer structure, the SH mode and Rayleigh mode show weak dispersive characteristics in the phase velocities. The S
0 Lamb wave, however, shows even stronger dispersion due to its plate-wave type whose characteristics are usually impacted a lot by the piezoelectric-layer thickness normalized to wavelength. Although varying LiNbO
3 thickness does not move the Rayleigh spurious mode away from the SH main mode in frequency, engineering the LiNbO
3 thickness does effectively keep the Lamb modes distant in frequency from the SH mode. Luckily, when the
hLiNbO3 < 0.5
λ, the closest Lamb mode S
0 mode would be 20% higher in frequency than the SH main mode, which makes a distance of at least 500 MHz if the SH passband is at 2.5 GHz.
The dispersive characteristics in
keff2 is stronger than in
vp,o for the SH mode, as shown in
Figure 3b. In other words, the change of
keff2 for SH mode with
hLiNbO3 is more obvious than that of
vp,o. In order to achieve a high
keff2, the LiNbO
3 cannot be too thin or too thick and the design range is preferred to be > 0.2
λ and < 0.5
λ. In addition, the Rayleigh and S
0 Lamb spurious modes can also be suppressed by choosing the LiNbO
3 thickness and cut-angle combination smartly. For the S
0 Lamb mode, the case is simpler since its
keff2 will lower at smaller LiNbO
3 thicknesses under different LiNbO
3 cut angle, and the design range of
hLiNbO3 < 0.5
λ fortunately happens to be able to suppress the S
0 Lamb modes. As a contrary, the LiNbO
3 thickness and rotation angle have to be optimized together for the Rayleigh mode, and a slightly larger rotation angle is preferred for the 0.2
λ <
hLiNbO3 < 0.5
λ design range, such as 30°
YX-LiNbO
3.
3.3. Frequency Response
Figure 4a,b show the FEM-simulated narrow-band response compared to LiNbO
3 substrate and wide-band response with periodic structure, which is a 1.5-dimension (1.5 D) model based on LiNbO
3/Si with 30°
YX-LiNbO
3 and
hLiNbO3/λ = 0.25. By the 1.5D model we assume an infinite number of IDT fingers (
NF) and infinite aperture lengths, but the stack setup in
z direction is fully considered (1D), as well as the IDT duty factor (
DF = finger width/pitch) and IDT shape in periodicity (0.5D).
Comparing the conductance and admittance curves of the SH modes in LiNbO
3 substrate and LiNbO
3/Si in
Figure 4a, it is clearly seen that in LiNbO
3 substrate, as the bulk wave velocity is lower than SH wave, the antiresonance is distorted with low-
Q, and from the conductance curve it could be observed that the wave cannot be effectively reflected in the stopband as well. On the contrary, for LiNbO
3/Si stack, the parallel resonance features a very sharp response and the conductance level is very deep around the
fp and throughout the stopband thanks to the minimal bulk radiation, again indicating the ultra-low propagation loss and the fact of nonleaky characteristics.
In addition, for the LiNbO
3/Si and at this LiNbO
3 cut angle and LiNbO
3 layer thickness designed to lower the Rayleigh
keff2 to near-zero, the narrow-band response (
Figure 4a) is clean from the Rayleigh mode, which presents in the response based on LiNbO
3 substrate. On the other hand, since the LiNbO
3 is thin enough, the wide-band response of the LiNbO
3/Si resonator also shows an extremely clean spectrum from 0 to 6 GHz.
4. Propagation Characteristics of SH Wave in AlN/LiNbO3/Si
4.1. Cut Angle
Figure 5a,b depict the open-surface phase velocities
vp,o for varied normalized thicknesses of AlN overlay layer on top of the IDT transducers sitting on LiNbO
3/Si and the piezo-layer is across all rotation angles from the
YX-LiNbO
3 with
hLiNbO3/λ = 0.25 and
hLiNbO3/λ = 0.5, respectively. The
c-axis-oriented AlN material constants are from literature [
15] and listed in
Table 2. The nonleaky SH wave propagating in the AlN/LiNbO
3/Si stack shows a similar trend to that in the LiNbO
3/Si layered stack. For both LiNbO
3 thickness cases, the phase velocity can be effectively enhanced by the AlN overlay, and the improvement converges when
hAlN is larger than 0.2
λ. The phase velocities of the SH modes in
Figure 5a with
hLiNbO3/λ = 0.25 are in general larger than the case in
Figure 5b with
hLiNbO3/λ = 0.5. As can be observed in
Figure 5a, with
hLiNbO3/λ = 0.25 and for
θ between 20° and 80°, the
vp,o can be as high as above 5000 m/s thanks to the AlN coating with
hAlN > 0.2
λ.
Furthermore, the Rayleigh mode in the case of
hLiNbO3/λ = 0.25 are less coupled with the SH mode at a high rotation angle of around 128°, and also less perturbed by
θ than the case of
hLiNbO3/λ = 0.5. At low
θ < 30°; however, the Rayleigh spurious mode is slightly closer to the SH mode in the case of
hLiNbO3/λ = 0.25 than in the thicker case, which is in a similar trend with
Figure 3a.
Figure 6a and b depict the effective coupling coefficient
keff2 for varied thicknesses of AlN overlay layer on LiNbO
3/Si across all rotation angles from the
YX LiNbO
3 with
hLiNbO3/λ = 0.25 and
hLiNbO3/λ = 0.5, respectively. Although the AlN overlay apparently lowers the
keff2, the degraded
keff2 would still be more than enough and much larger than the current technologies. Moreover, the reduction in
keff2 would converge when
hAlN is larger than 0.2
λ. For both LiNbO
3 thickness cases, and for cut angles between 0° and 60°, the
keff2 can be as high as above 11%. Comparing two LiNbO
3 thicknesses, the peak
keff2 of the SH mode in AlN/LiNbO
3/Si across a wide rotation-angle range are at similar level.
It is also interesting to note that at θ ~ 10°–30°, the keff2 of SH mode is maximized and at the same time the keff2 of Rayleigh mode is minimized, where the Rayleigh spurious mode can be suppressed in the nonleaky SH SAW resonator or filter. With AlN overlays, the optimized cut angle for Rayleigh mode elimination shifts down a bit. The optimal cut-angle design range would be of 10°–30° for simultaneously achieving high vp,o and large keff2 for the SH mode, as well as low- keff2 for Rayleigh mode.
4.2. Trade-Offs between vp,o and keff2
The trade-offs between the
vp,o and
keff2 by varying AlN thickness are compared for the nonleaky SH wave propagating in AlN/LiNbO
3/Si with two different rotation angles of the piezoelectric LiNbO
3, as presented in
Figure 7a,b. It can be noted that both the
vp,o and
keff2 saturate when
hAlN > 0.4
λ. For both 15°
YX-LiNbO
3 and 30°
YX-LiNbO
3, the
vp,o is much higher for the case of
hLiNbO3 = 0.25
λ than
hLiNbO3 = 0.5
λ, and the
keff2 is also slightly higher for the thinner case. At
θ = 15°, the saturated
vp,o is as high as 5280 m/s when
hLiNbO3 = 0.25
λ; at
θ = 30°, the saturated
vp,o is 5240 m/s when
hLiNbO3 = 0.25
λ. The preferred AlN thickness design range would be between 0.2
λ and 0.4
λ right before the convergence in order to avoid additional mass loading on the device coupling.
Figure 8 depicts the displacement field as well as the first principal stress field of the nonleaky SH mode on the AlN/LiNbO
3/Si with increasing AlN normalized thicknesses. It is most obvious that the mechanical fields become more penetrated and uniform when AlN becomes thicker. It is also intriguing to note that when the AlN layer is thicker than 0.4
λ, the vibration becomes off the surface and concentrated in the highly piezo LiNbO
3 layer; the AlN film then starts to be free of the mechanical vibration and transduction, indicating a stable mechanical-loading effect only instead of wave perturbation.
Both the saturated values of
vp,o and
keff2 are larger in the case of
hLiNbO3 = 0.25
λ compared to
hLiNbO3 = 0.5
λ for either 15°
YX-LiNbO
3 or 30°
YX-LiNbO
3. Note at for the 15°
YX-LiNbO
3 case, 0.5
λ-thick LiNbO
3 yields larger
keff2 than 0.25
λ-thick LiNbO
3 when AlN overlay is not applied and
hAlN = 0, which can also be observed from
Figure 4b. However, even with slight AlN overlay, the
keff2 of 0.25
λ-thick LiNbO
3 becomes similar or larger. As a result, for both rotation-angle cases, the 0.25
λ-thick LiNbO
3 enables much higher
vp,o and similar
keff2.
When hLiNbO3 = 0.25λ, the vp,o can be effectively boosted from 4420 m/s to 5280 m/s, showing a near 20% increase when hAlN is up to > 0.4λ. Although the keff2 is decreased by increasing hAlN, the absolute value is still above 14% even with a large hAlN, which is sufficient for most commercial bandwidths, thanks to the super-large intrinsic material electromechanical coupling K2 of the low-angle-rotated YX-LiNbO3.
4.3. Rayleigh Spurious
With the ability of high electromechanical coupling, the Rayleigh mode performs as the major spurious mode for most SH main-mode devices. In addition to the phase velocities of the Rayleigh mode always being very close to the SH mode, the Rayleigh spurious mode could generate prominent passband notches and near-band spikes for the SH wave filters, and pose severe risks for the application of the nonleaky SH waves. Therefore, the suppression of the Rayleigh spurious mode is highly desirable.
Figure 9 depicts the simulated
keff2 of the Rayleigh spurious mode versus AlN thicknesses for the AlN/LiNbO
3/Si with different rotation angle and
hLiNbO3/λ = 0.25. While the 30° and 35° rotation angles enable near-zero
keff2 of the Rayleigh mode, when AlN overlay becomes thicker, the preferred rotation angle is smaller for the low
keff2 of the Rayleigh mode. Or, in other words, for different rotation angles of the LiNbO
3 layer, the optimized AlN thicknesses for zero-coupling Rayleigh mode are varied: for relatively lower rotation angle, the optimized AlN thickness would be large to diminish the Rayleigh mode.
As concluded in the previous section, 0.2
λ–0.4
λ thick AlN overlay is preferred for enabling the large velocity and
keff2 level at the same time. The optimized cut angle for the near-zero coupling of the Rayleigh spurious mode would be between 10° and 15°
YX-LiNbO
3, as shown in the yellow and green curves as examples inside the design range marked in
Figure 9. Again, from the green and blue curves in
Figure 6a, it can be found that 15°
YX-LiNbO
3 with 0.2
λ AlN enables larger
keff2 of the main mode than 10°
YX-LiNbO
3 with 0.3
λ AlN. As a result, 15°
YX-LiNbO
3 with 0.2
λ AlN can be chosen for a high suppression of the Rayleigh spurious mode, as well as enabling large
vp and high
keff2 for the main SH main mode simultaneously.
4.4. Improvement of TCF
In addition, without a careful design of the substrate, the layered SH potentially has spurious responses in the out-of-band frequencies (Lamb modes) and near-band frequencies. This paper focuses on the design of layered substrate not only to optimize its narrow-band characteristics—f, Q, keff2, temperature coefficient of frequency (TCF)—but also for eliminating the out-of-band spurious responses.
The
TCF performance measuring the thermal stability of a resonator is set by the temperature dependence of phase velocity and the thermal-expansion coefficient of the wave along the propagation direction. The first-order
TCF’s for the series resonance (
TCFs,1st) and parallel resonance (
TCFp,1st) are calculated as
where
vp,SC and
vp,OC refer to the phase velocities under short-circuited (SC) and open-circuited (OC) grating BCs, shown in the inset of FIG 10. From the coupling-of-modes (COM) theory, these BCs corresponds to the
fs and
fp, respectively. Their temperature dependence ∂/∂
T is calculated from the temperature coefficients of stiffness constants, temperature coefficients of piezoelectric constants, and temperature coefficients of permittivity of LiNbO
3, AlN, Si, and Al listed in
Table 3. The
αx corresponds to the thermal-expansion coefficient of the substrate in the wave-propagation direction
x, also listed in
Table 3. Since the Si substrate is much thicker than the LiNbO
3 and AlN, the effect of thermal expansion is limited by the clamping substrate Si, and its
α11 of 2.6 ppm/°C from literature [
19] is used herein for the derivation.
Figure 10 shows the calculated
TCFs,1st and
TCFp,1st by varying the AlN thickness for the nonleaky SH waves propagating in AlN/LiNbO
3/Si with the 0.25
λ- thick 15°
YX-LiNbO
3 optimized from the previous analysis. Although AlN also becomes softer (contributing to
TCV) and larger (contributing to
α) when temperature rises, its
TCF absolute value is much lower than LiNbO
3—~−26 ppm/°C. Thus, the thicker AlN can reduce the thermal dependence of the phase velocity for the SH wave traveling in the composite structure. The
TCFp,1st is always lower than
TCFs,1st due to the positive
Te15 and
Te22 of LiNbO
3; at a high temperature,
keff2 would increase slightly.
4.5. Slowness Curve and Propagation Direction
Although the propagation direction can be lithographically controlled in most cases along the
X direction (all the previous analysis assumes the
X propagation direction), the polar plots of propagating characteristics versus propagation direction can be good indicators for understanding the wave properties as well as fostering the device design [
20].
Figure 11a,b show the slowness (
S) curve and the
keff2 of the SH wave versus different propagation directions on the LiNbO
3 substrate, LiNbO
3/Si (
hLiNbO3/λ = 0.25), and AlN/LiNbO
3/Si (
hLiNbO3/λ = 0.25,
hAlN/λ = 0.2). The slowness curve for the LiNbO
3 substrate shows a concave feature, whereas for the LiNbO
3/Si and AlN/ LiNbO
3/Si stacks it is nearly straight near the
x-axis, indicating minimal diffraction of the nonleaky SH wave. Usually, for a well-guided wave with convex slowness curves, a faster region is required at the lateral ends to guide the wave, and for the concave case there might be lateral leakage to the fast regions. For the “straight” type [
3], the IDT gap region design would be different and less sensitive to the concave or convex cases. In addition, from
Figure 11a, the phase
vp’s is largely enhanced in all propagation directions after adding the AlN overlay.
In
Figure 11b, the
keff2 decreases drastically when the propagation direction deviates from the
X-axis. In propagation directions close to
X, the
keff2 is slightly reduced from LiNbO
3 substrate to the LiNbO
3/Si nonleaky stack (agreeing with
Figure 2b in the X axis case); in propagation directions close to
Z, the
keff2 is very slightly improved from LiNbO
3 substrate to the LiNbO
3/Si bonded structure. After adding the AlN overlay on top of the transducer, the
keff2 reduces drastically due to the mechanical loading effect, and in the
X direction the
keff2 falls to between 10% and 15%, which is still more than enough for the advanced LTE bandwidth specification and most of the 5G NR bands.
In summary, the optimized propagation direction for the AlN/LiNbO3/Si resonator is the material X direction of LiNbO3 thanks for the fast wave-travelling velocity and the ultralarge keff2. The wave is also better-guided in the transversal direction compared to the traditional leaky-SH resonator based on LiNbO3 substrate.
4.6. Frequency Response
Combining the previous analysis toward a high-
f, large-
keff2, and spurious-free response utilizing the nonleaky SH wave, a stack with optimized substrate values is achieved: 5°
YX-LiNbO
3,
hLiNbO3/λ = 0.25, and
hAlN/λ = 0.2.
Figure 12a,b plot the FEM-simulated narrow-band responses of the SH wave in the AlN/LiNbO
3/Si layered stack compared to LiNbO
3/Si and LiNbO
3 substrate, as well as wide-band response with periodic structure (1.5D model). Intriguingly, the AlN/LiNbO
3/Si layered structure enables frequency as high as 3 GHz while the IDT pitch is as large as 1 μm, ensuing good power handling. The
f can further scale up if smaller
λ is employed. The frequency or
vp has been increased by 18%, breaking the frequency limits for SAW resonators and filters and applicable to high-frequency bands in LTE-Advancement Pro and 5G NR.
Comparing admittance curves of the SH modes in AlN/ LiNbO
3/Si, LiNbO
3/Si, and LiNbO
3 substrate in
Figure 12a, it can be noted that the antiresonances for both AlN/LiNbO
3/Si and LiNbO
3/Si are very sharp, indicating a very high-quality factor at parallel-resonance (
Qp) due to the elimination of bulk leakage (quality factor at series resonance (
Qs) is usually dominated by the transducer resistance
Rs and
Qp dominated by the acoustic propagation loss).
In addition, the AlN/ LiNbO3/Si layered substrate with the optimized parameters shows an extremely clean response in both narrow and wide spectrums. The Rayleigh mode and Lamb modes are suppressed with keff2 of near-zero. By the analysis and careful design, the novel stack provides high performance, the ability of high frequency, and an extremely clean spectrum from 0 to 6 GHz simultaneously.