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Journal: Crystals, 2023
Volume: 13
Number: 650

Article: A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)
Authors: by Hongyu Cheng, Wenmao Li, Peiran Wang, Jianguo Chen, Qing Wang and Hongyu Yu
Link: https://www.mdpi.com/2073-4352/13/4/650

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