A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)
, Jianguo Chen 3, Qing Wang 1,2,* and Hongyu Yu 1,2,*Round 1
Reviewer 1 Report
- All acronyms should be explained when used for the first time
- Typos throughout the whole manuscript, for example: "a Novel", "many research group have", "Schottky barrier diode(SBD)", "showen" and many, many more...
- Referencies are missing, for example line 25, " N. Tega et al. "
- This s [4], [5], [6], [7], [8], [9], [10], [11], [12] can be replaced by [4-12]
- References list is too short, and not up to date, and should be strongly improved.
- Figures 4a and 4c are not used in the main text.
- Figure 5a is the same as 1b?
- Figures 5a, 6a, 7a are not described in the text.
Author Response
Dear Sir/Madam,
Thank you very much for reviewing our manuscript entitled "A Fast Recovery SiC TED-MOS MOSFET with Schottky Barrier Diode (SBD)" (Manuscript ID: crystals-2275276). Based on your kind comments and suggestions, we have carefully revised our manuscript and uploaded our responses.
Best wishes!
Author Response File: 
Author Response.pdf
Reviewer 2 Report
The authors described the effects of Embedding SBD on turn-off switching of SiC TED-MOSFET.
They appropriately explained their simulation results including static and dynamic characteristics but some correction must be carried out for publication.
1. I can't see any results for current collapse. please include pulsed I-V simulation results as you indicated in the introduction section.
2. The authors should include the breakdown I-V characteristic when VGS=0V
3. Additional explanation or evidence about relationship between metal workfunction and current spreading is needed.
4. there are many typos (1->Fig. 1, 1.5m -> 1.5um)
5. Please add explanation about change of threshold voltage
Author Response
Dear Sir/Madam,
Thank you very much for reviewing our manuscript entitled "A Fast Recovery SiC TED-MOS MOSFET with Schottky Barrier Diode (SBD)" (Manuscript ID: crystals-2275276). Based on your kind comments and suggestions, we have carefully revised our manuscript and uploaded our responses.
Best wishes!
Author Response File: Author Response.pdf
Round 2
Reviewer 1 Report
The English should be improved, as it is tough to understand and follow the text.
Author Response
Dear Sir/Madam:
Thank you very much for reviewing our manuscript entitled “A Fast Recovery SiC TED-MOS MOSFET With Schottky Barrier Diode (SBD)” (Manuscript ID: crystals-2275276). Based on your kind comments and suggestions, we have carefully revised our manuscript. The revisions we have made are highlighted in red in the revised manuscript, and our responses to your comments and questions are listed in a word file.
Author Response File: Author Response.pdf
Reviewer 2 Report
1. For the added figure 2(d), the x axis title should be corrected to VDS(V)
2. For figure 3, the in-set graph should be inlarged. I can not see the data clearly
3. At line 159, Figure 3(b) should be corrected to Figure 3(c)
4. For Figure 2(b), 4(b), 8(b), the authors should add x-axis titles
Author Response
Dear Sir/Madam:
Thank you very much for reviewing our manuscript entitled “A Fast Recovery SiC TED-MOS MOSFET With Schottky Barrier Diode (SBD)” (Manuscript ID: crystals-2275276). Based on your kind comments and suggestions, we have carefully revised our manuscript. The revisions we have made are highlighted in red in the revised manuscript, and our responses to your comments and questions are listed in a word file.
Author Response File: Author Response.pdf
Round 3
Reviewer 1 Report
All questions have been addressed.
