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Journal: Applied SciencesVolume: 10Number: 7895
Article: A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM)
  • Authors:
  • Runze Chen1,2,
  • Lixin Wang1,2,* and
  • Min Guo1,3
  • et al.
Link: https://www.mdpi.com/2076-3417/10/21/7895

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