Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

Kang, Min Woo; Choi, Woo Young

doi:10.3390/app10248880

Open AccessArticle

Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

by

Min Woo Kang

and

Woo Young Choi

^*

Department of Electronic Engineering, Sogang University, Seoul 04107, Korea

^*

Author to whom correspondence should be addressed.

Appl. Sci. 2020, 10(24), 8880; https://doi.org/10.3390/app10248880

Submission received: 27 October 2020 / Revised: 6 December 2020 / Accepted: 10 December 2020 / Published: 11 December 2020

(This article belongs to the Special Issue Device Modeling for TCAD and Circuit Simulation)

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Abstract

The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation. The simulation results show that the hump behavior degrades the subthreshold swing (SS) and on-current (I_on) because the corners and sides of nanowires (NWs) have different surface potentials. The hump behavior can be successfully suppressed by increasing the radius of curvature (R) of NWs and reducing gate insulator thickness (T_ins).

Keywords: hump behavior; corner; surface potential; gate-normal nanowire tunnel field-effect transistor (NWTFET)

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MDPI and ACS Style

Kang, M.W.; Choi, W.Y. Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs). Appl. Sci. 2020, 10, 8880. https://doi.org/10.3390/app10248880

AMA Style

Kang MW, Choi WY. Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs). Applied Sciences. 2020; 10(24):8880. https://doi.org/10.3390/app10248880

Chicago/Turabian Style

Kang, Min Woo, and Woo Young Choi. 2020. "Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)" Applied Sciences 10, no. 24: 8880. https://doi.org/10.3390/app10248880

APA Style

Kang, M. W., & Choi, W. Y. (2020). Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs). Applied Sciences, 10(24), 8880. https://doi.org/10.3390/app10248880

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Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

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