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Article

Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory

by
Yu Zhang
1,2,
Xiong Chen
2,
Hao Zhang
2,*,
Xicheng Wei
1,
Xiangfeng Guan
2,
Yonghua Wu
2,
Shaozu Hu
2,
Jiale Zheng
2,
Guidong Wang
2,
Jiawen Qiu
2 and
Jun Wang
3,*
1
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
2
Organic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, China
3
College of Science, Shanghai Institute of Technology, Shanghai 201418, China
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2020, 10(8), 2754; https://doi.org/10.3390/app10082754
Submission received: 28 February 2020 / Revised: 11 April 2020 / Accepted: 13 April 2020 / Published: 16 April 2020
(This article belongs to the Section Electrical, Electronics and Communications Engineering)
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Abstract

Molybdenum disulfide (MoS2) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and (Cu) 40.52 cm2/Vs, respectively. Unpredictably, the on-state currents of four devices were of the same order of magnitude with no obvious difference. For clarifying this phenomenon, we calculated the Schottky barrier height (SBH) of the four metal–semiconductor contacts by thermionic emission theory and confirmed the existence of Fermi-level pinning (FLP). We suppose the FLP may be caused by surface states of the semiconductor produced from crystal defects.
Keywords: fermi-level pinning; MoS2; field-effect transistors; thermionic emission theory fermi-level pinning; MoS2; field-effect transistors; thermionic emission theory

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MDPI and ACS Style

Zhang, Y.; Chen, X.; Zhang, H.; Wei, X.; Guan, X.; Wu, Y.; Hu, S.; Zheng, J.; Wang, G.; Qiu, J.; et al. Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory. Appl. Sci. 2020, 10, 2754. https://doi.org/10.3390/app10082754

AMA Style

Zhang Y, Chen X, Zhang H, Wei X, Guan X, Wu Y, Hu S, Zheng J, Wang G, Qiu J, et al. Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory. Applied Sciences. 2020; 10(8):2754. https://doi.org/10.3390/app10082754

Chicago/Turabian Style

Zhang, Yu, Xiong Chen, Hao Zhang, Xicheng Wei, Xiangfeng Guan, Yonghua Wu, Shaozu Hu, Jiale Zheng, Guidong Wang, Jiawen Qiu, and et al. 2020. "Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory" Applied Sciences 10, no. 8: 2754. https://doi.org/10.3390/app10082754

APA Style

Zhang, Y., Chen, X., Zhang, H., Wei, X., Guan, X., Wu, Y., Hu, S., Zheng, J., Wang, G., Qiu, J., & Wang, J. (2020). Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory. Applied Sciences, 10(8), 2754. https://doi.org/10.3390/app10082754

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