Wang, F.;                     Yang, X.;                     Zhao, Y.;                     Wu, J.;                     Guo, Z.;                     He, Z.;                     Fan, Z.;                     Yang, F.    
        Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Appl. Sci. 2022, 12, 3261.
    https://doi.org/10.3390/app12073261
    AMA Style
    
                                Wang F,                                 Yang X,                                 Zhao Y,                                 Wu J,                                 Guo Z,                                 He Z,                                 Fan Z,                                 Yang F.        
                Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Applied Sciences. 2022; 12(7):3261.
        https://doi.org/10.3390/app12073261
    
    Chicago/Turabian Style
    
                                Wang, Fengxuan,                                 Xiang Yang,                                 Yongqiang Zhao,                                 Jingmin Wu,                                 Zhiyu Guo,                                 Zhi He,                                 Zhongchao Fan,                                 and Fuhua Yang.        
                2022. "Low-Temperature Direct Bonding of SiC to Si via Plasma Activation" Applied Sciences 12, no. 7: 3261.
        https://doi.org/10.3390/app12073261
    
    APA Style
    
                                Wang, F.,                                 Yang, X.,                                 Zhao, Y.,                                 Wu, J.,                                 Guo, Z.,                                 He, Z.,                                 Fan, Z.,                                 & Yang, F.        
        
        (2022). Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Applied Sciences, 12(7), 3261.
        https://doi.org/10.3390/app12073261